Keyphrases
Metal-organic Chemical Vapor Deposition (MOCVD)
100%
Si(111)
100%
ZnO Film
100%
Si (100) Substrate
100%
Si(111) Substrate
50%
Si Substrate
33%
Lattice Mismatch
33%
3C-SiC Buffer Layer
33%
Epitaxial
16%
Growth Conditions
16%
Photoluminescence Emission
16%
Full Width at Half Maximum
16%
X-ray Rocking Curve
16%
Poor Quality
16%
(111)-oriented
16%
Optimized Growth
16%
Directly Grown
16%
Engineering
Chemical Vapor Deposition
100%
Si Substrate
100%
Vapor Deposition
100%
Buffer Layer
100%
Lattice Mismatch
100%
Growth Condition
50%
Poor Quality
50%
Material Science
Film
100%
ZnO
100%
Chemical Vapor Deposition
100%
Buffer Layer
28%
Lattice Mismatch
28%
Photoluminescence
14%
X-Ray Diffractogram
14%
Earth and Planetary Sciences
Vapor Deposition
100%
Emissions
50%
Photoluminescence
50%
X-Ray Diffractogram
50%