Metalorganic chemical vapor deposition of InN on GaN/sapphire template by using thin InN buffer layer

Jin Woo Ju; Joo In Lee; In Hwan Lee

doi:10.1016/j.tsf.2006.03.024

Metalorganic chemical vapor deposition of InN on GaN/sapphire template by using thin InN buffer layer

Jin Woo Ju, Joo In Lee, In Hwan Lee

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We investigated the effects of low-temperature deposited thin InN buffer layer on the material characteristics of the InN epitaxial films grown on a thick GaN/sapphire template by using metalorganic chemical vapor deposition. The InN buffer layer was grown at a fixed temperature of 400 °C with different deposition time. Compared with the InN film without the buffer layer, those with the buffer layer showed a better surface morphology, an increased X-ray diffraction intensity, a decreased background carrier concentration, and an improved photoluminescence characteristics.

Original language	English
Pages (from-to)	2291-2294
Number of pages	4
Journal	Thin Solid Films
Volume	515
Issue number	4
DOIs	https://doi.org/10.1016/j.tsf.2006.03.024
Publication status	Published - 2006 Dec 5
Externally published	Yes

Keywords

Buffer layer
Indium nitride
Metal organic chemical vapor deposition
Photoluminescene
X-ray diffraction

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2006.03.024

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title = "Metalorganic chemical vapor deposition of InN on GaN/sapphire template by using thin InN buffer layer",

abstract = "We investigated the effects of low-temperature deposited thin InN buffer layer on the material characteristics of the InN epitaxial films grown on a thick GaN/sapphire template by using metalorganic chemical vapor deposition. The InN buffer layer was grown at a fixed temperature of 400 °C with different deposition time. Compared with the InN film without the buffer layer, those with the buffer layer showed a better surface morphology, an increased X-ray diffraction intensity, a decreased background carrier concentration, and an improved photoluminescence characteristics.",

keywords = "Buffer layer, Indium nitride, Metal organic chemical vapor deposition, Photoluminescene, X-ray diffraction",

author = "Ju, {Jin Woo} and Lee, {Joo In} and Lee, {In Hwan}",

note = "Funding Information: This work was supported by the Korea Research Foundation Grant (KRF-2004-003-D00143).",

year = "2006",

month = dec,

day = "5",

doi = "10.1016/j.tsf.2006.03.024",

language = "English",

volume = "515",

pages = "2291--2294",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "4",

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TY - JOUR

T1 - Metalorganic chemical vapor deposition of InN on GaN/sapphire template by using thin InN buffer layer

AU - Ju, Jin Woo

AU - Lee, Joo In

AU - Lee, In Hwan

N1 - Funding Information: This work was supported by the Korea Research Foundation Grant (KRF-2004-003-D00143).

PY - 2006/12/5

Y1 - 2006/12/5

N2 - We investigated the effects of low-temperature deposited thin InN buffer layer on the material characteristics of the InN epitaxial films grown on a thick GaN/sapphire template by using metalorganic chemical vapor deposition. The InN buffer layer was grown at a fixed temperature of 400 °C with different deposition time. Compared with the InN film without the buffer layer, those with the buffer layer showed a better surface morphology, an increased X-ray diffraction intensity, a decreased background carrier concentration, and an improved photoluminescence characteristics.

AB - We investigated the effects of low-temperature deposited thin InN buffer layer on the material characteristics of the InN epitaxial films grown on a thick GaN/sapphire template by using metalorganic chemical vapor deposition. The InN buffer layer was grown at a fixed temperature of 400 °C with different deposition time. Compared with the InN film without the buffer layer, those with the buffer layer showed a better surface morphology, an increased X-ray diffraction intensity, a decreased background carrier concentration, and an improved photoluminescence characteristics.

KW - Buffer layer

KW - Indium nitride

KW - Metal organic chemical vapor deposition

KW - Photoluminescene

KW - X-ray diffraction

UR - http://www.scopus.com/inward/record.url?scp=33750803767&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2006.03.024

DO - 10.1016/j.tsf.2006.03.024

M3 - Article

AN - SCOPUS:33750803767

SN - 0040-6090

VL - 515

SP - 2291

EP - 2294

JO - Thin Solid Films

JF - Thin Solid Films

IS - 4

ER -

Metalorganic chemical vapor deposition of InN on GaN/sapphire template by using thin InN buffer layer

Abstract

Keywords

ASJC Scopus subject areas

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