Metalorganic chemical vapor deposition of ZnO films on Si (111) substrates using 3C-SiC buffer layers

Epitaxial ZnO films were prepared on Si (111) substrates using epitaxial 3C-SiC buffer layers. In particular, we tried different epitaxial 3C-SiC buffer layers to grow high quality ZnO films on silicon substrates by metal-organic chemical vapor deposition. The relationship between the quality of ZnO epitaxial layers and that of the SiC buffer layers was investigated. The epitaxial ZnO films were obviously improved by improving the SiC buffer layers. When the quality of the SiC buffer layers was good enough, the effect became less obvious.