Metalorganic molecular beam epitaxy of InGaN layers and their optical properties

Min Ho Kim; Jun Kyu Cho; In Hwan Lee; Seong Ju Park

doi:10.1002/(SICI)1521-396X(199911)176:1<269::AID-PSSA269>3.0.CO;2-2

Metalorganic molecular beam epitaxy of InGaN layers and their optical properties

Min Ho Kim, Jun Kyu Cho, In Hwan Lee, Seong Ju Park

Research output: Contribution to journal › Conference article › peer-review

32 Citations (Scopus)

Abstract

We report on the growth of InGaN/GaN heterostructures on the nitridated α-Al₂O₃ substrate using metalorganic molecular beam epitaxy (MOMBE) system equipped with an N₂ rf-plasma cell. An In incorporation of 41% was achieved without InN phase separation in the InGaN film. The InGaN films showed photoluminescence (PL) spectra corresponding to blue, green, and red colors depending on the In composition. The XRD and PL measurements showed that the red emission from InGaN was originated from the phase-separated InN in the InGaN film.

Original language	English
Pages (from-to)	269-272
Number of pages	4
Journal	Physica Status Solidi (A) Applied Research
Volume	176
Issue number	1
DOIs	https://doi.org/10.1002/(SICI)1521-396X(199911)176:1<269::AID-PSSA269>3.0.CO;2-2
Publication status	Published - 1999 Nov
Externally published	Yes
Event	Proceedings of the 1999 3rd International Conference on Nitride Semiconductors (ICNS'99) - Montpellier, France Duration: 1999 Jul 4 → 1999 Jul 9

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1002/(SICI)1521-396X(199911)176:1<269::AID-PSSA269>3.0.CO;2-2

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title = "Metalorganic molecular beam epitaxy of InGaN layers and their optical properties",

abstract = "We report on the growth of InGaN/GaN heterostructures on the nitridated α-Al2O3 substrate using metalorganic molecular beam epitaxy (MOMBE) system equipped with an N2 rf-plasma cell. An In incorporation of 41% was achieved without InN phase separation in the InGaN film. The InGaN films showed photoluminescence (PL) spectra corresponding to blue, green, and red colors depending on the In composition. The XRD and PL measurements showed that the red emission from InGaN was originated from the phase-separated InN in the InGaN film.",

author = "Kim, {Min Ho} and Cho, {Jun Kyu} and Lee, {In Hwan} and Park, {Seong Ju}",

note = "Copyright: Copyright 2004 Elsevier Science B.V., Amsterdam. All rights reserved.; Proceedings of the 1999 3rd International Conference on Nitride Semiconductors (ICNS'99) ; Conference date: 04-07-1999 Through 09-07-1999",

year = "1999",

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doi = "10.1002/(SICI)1521-396X(199911)176:1<269::AID-PSSA269>3.0.CO;2-2",

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journal = "Physica Status Solidi (A) Applied Research",

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T1 - Metalorganic molecular beam epitaxy of InGaN layers and their optical properties

AU - Kim, Min Ho

AU - Cho, Jun Kyu

AU - Lee, In Hwan

AU - Park, Seong Ju

PY - 1999/11

Y1 - 1999/11

N2 - We report on the growth of InGaN/GaN heterostructures on the nitridated α-Al2O3 substrate using metalorganic molecular beam epitaxy (MOMBE) system equipped with an N2 rf-plasma cell. An In incorporation of 41% was achieved without InN phase separation in the InGaN film. The InGaN films showed photoluminescence (PL) spectra corresponding to blue, green, and red colors depending on the In composition. The XRD and PL measurements showed that the red emission from InGaN was originated from the phase-separated InN in the InGaN film.

AB - We report on the growth of InGaN/GaN heterostructures on the nitridated α-Al2O3 substrate using metalorganic molecular beam epitaxy (MOMBE) system equipped with an N2 rf-plasma cell. An In incorporation of 41% was achieved without InN phase separation in the InGaN film. The InGaN films showed photoluminescence (PL) spectra corresponding to blue, green, and red colors depending on the In composition. The XRD and PL measurements showed that the red emission from InGaN was originated from the phase-separated InN in the InGaN film.

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M3 - Conference article

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Y2 - 4 July 1999 through 9 July 1999

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Metalorganic molecular beam epitaxy of InGaN layers and their optical properties

Abstract

ASJC Scopus subject areas

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