Facilitating anti-reflection has been of great scientific and practical interest due to its diverse applications in optical devices including solar cells and photodetectors. Various anti-reflection schemes are exploited and elaborated to realize effective broadband suppression of reflected light. In this work, we present and analyze a metasurface coating on silicon for efficient anti-reflection by leveraging the design rules of the Chebyshev transformer in the field of transmission line theory in the microwave regime. We explore the underlying physics of the metasurface by comparing the two representative types of constituent nanostructures and evaluating their optical properties using effective index retrieval methods. In particular, by designing nanostructures with subtle vertical etching in the pyramid valley, a broadband anti-reflection coating ranging from 400 to 1100 nm is achieved with reflection of less than 3%. We believe that the proposed design rule and analysis for this Chebyshev metasurface could pave an important way to realize systematic and effective anti-reflection schemes for diverse optical devices.
Bibliographical noteFunding Information:
Manuscript received April 7, 2021; revised May 6, 2021; accepted May 15, 2021. Date of publication May 19, 2021; date of current version June 4, 2021. This work was supported in part by the National Research Foundation of Korea (NRF) under Grant NRF-2019R1C1C1004693, in part by the Samsung Electronics, and in part by the Samsung Research Funding & Incubation Center of Samsung Electronics under Grant SRFC-MA1901-03. Corresponding author: Soo Jin Kim (e-mail: firstname.lastname@example.org).
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- Chebyshev transformer
- subwavelength nano-structures
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering