Methane detection using Pt-gated AlGaN/GaN high electron mobility transistor based Schottky diodes

Yuyin Xi; Lu Liu; Fan Ren; Stephen J. Pearton; Jihyun Kim; Amir Dabiran; Peter P. Chow

doi:10.1116/1.4803743

Methane detection using Pt-gated AlGaN/GaN high electron mobility transistor based Schottky diodes

Yuyin Xi, Lu Liu, Fan Ren, Stephen J. Pearton, Jihyun Kim, Amir Dabiran, Peter P. Chow

Department of Chemical and Biological Engineering

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Pt-gated AlGaN/GaN high electron mobility transistor based Schottky diodes were employed to detect methane. A detection sensitivity >100 was obtained for the diodes under reverse bias, and this was one order of magnitude higher than the sensitivity of the diodes operated under forward bias. A new method to extract the response time was demonstrated by taking the derivative of diode current, allowing a reduction in the sensor response time by 80%. Methane sensing experiments were conducted at different temperatures, and an Arrhenius plot of the data determined an activation energy of 57 kJ/mol for the sensing process.

Original language	English
Article number	032203
Journal	Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume	31
Issue number	3
DOIs	https://doi.org/10.1116/1.4803743
Publication status	Published - 2013 May

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Instrumentation
Process Chemistry and Technology
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

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10.1116/1.4803743

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title = "Methane detection using Pt-gated AlGaN/GaN high electron mobility transistor based Schottky diodes",

abstract = "Pt-gated AlGaN/GaN high electron mobility transistor based Schottky diodes were employed to detect methane. A detection sensitivity >100 was obtained for the diodes under reverse bias, and this was one order of magnitude higher than the sensitivity of the diodes operated under forward bias. A new method to extract the response time was demonstrated by taking the derivative of diode current, allowing a reduction in the sensor response time by 80%. Methane sensing experiments were conducted at different temperatures, and an Arrhenius plot of the data determined an activation energy of 57 kJ/mol for the sensing process.",

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AU - Xi, Yuyin

AU - Liu, Lu

AU - Ren, Fan

AU - Pearton, Stephen J.

AU - Kim, Jihyun

AU - Dabiran, Amir

AU - Chow, Peter P.

PY - 2013/5

Y1 - 2013/5

N2 - Pt-gated AlGaN/GaN high electron mobility transistor based Schottky diodes were employed to detect methane. A detection sensitivity >100 was obtained for the diodes under reverse bias, and this was one order of magnitude higher than the sensitivity of the diodes operated under forward bias. A new method to extract the response time was demonstrated by taking the derivative of diode current, allowing a reduction in the sensor response time by 80%. Methane sensing experiments were conducted at different temperatures, and an Arrhenius plot of the data determined an activation energy of 57 kJ/mol for the sensing process.

AB - Pt-gated AlGaN/GaN high electron mobility transistor based Schottky diodes were employed to detect methane. A detection sensitivity >100 was obtained for the diodes under reverse bias, and this was one order of magnitude higher than the sensitivity of the diodes operated under forward bias. A new method to extract the response time was demonstrated by taking the derivative of diode current, allowing a reduction in the sensor response time by 80%. Methane sensing experiments were conducted at different temperatures, and an Arrhenius plot of the data determined an activation energy of 57 kJ/mol for the sensing process.

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VL - 31

JO - Journal of Vacuum Science and Technology B

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ER -

Methane detection using Pt-gated AlGaN/GaN high electron mobility transistor based Schottky diodes

Abstract

ASJC Scopus subject areas

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