MgO/p-GaN enhancement mode metal-oxide semiconductor field-effect transistors

Y. Irokawa; Y. Nakano; M. Ishiko; T. Kachi; J. Kim; F. Ren; B. P. Gila; A. H. Onstine; C. R. Abernathy; S. J. Pearton; C. C. Pan; G. T. Chen; J. I. Chyi

doi:10.1063/1.1704876

MgO/p-GaN enhancement mode metal-oxide semiconductor field-effect transistors

Y. Irokawa, Y. Nakano, M. Ishiko, T. Kachi, J. Kim, F. Ren, B. P. Gila, A. H. Onstine, C. R. Abernathy, S. J. Pearton, C. C. Pan, G. T. Chen, J. I. Chyi

Research output: Contribution to journal › Article › peer-review

107 Citations (Scopus)

Abstract

The features of MgO/p-GaN enhanced mode metal-oxide semiconductor field-effect transistors (MOSFET) were analyzed. It was found that the GaN-based metal-oxide semiconductor (MOS) transistors had low leakage currents and power consumption along with higher current gain cutoff frequency. It was observed that the MOSFET devices showed better gate and epi/source breakdown characteristics with high quality of gate oxides grown under controlled conditions by molecular beam epitaxy. Analysis shows that at a drain-source voltage of 5 V the maximum transconductance was found to be 5.4 μS mm ^-1 for GaAs MOSFETs.

Original language	English
Pages (from-to)	2919-2921
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	15
DOIs	https://doi.org/10.1063/1.1704876
Publication status	Published - 2004 Apr 12
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1704876

Cite this

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title = "MgO/p-GaN enhancement mode metal-oxide semiconductor field-effect transistors",

abstract = "The features of MgO/p-GaN enhanced mode metal-oxide semiconductor field-effect transistors (MOSFET) were analyzed. It was found that the GaN-based metal-oxide semiconductor (MOS) transistors had low leakage currents and power consumption along with higher current gain cutoff frequency. It was observed that the MOSFET devices showed better gate and epi/source breakdown characteristics with high quality of gate oxides grown under controlled conditions by molecular beam epitaxy. Analysis shows that at a drain-source voltage of 5 V the maximum transconductance was found to be 5.4 μS mm -1 for GaAs MOSFETs.",

author = "Y. Irokawa and Y. Nakano and M. Ishiko and T. Kachi and J. Kim and F. Ren and Gila, {B. P.} and Onstine, {A. H.} and Abernathy, {C. R.} and Pearton, {S. J.} and Pan, {C. C.} and Chen, {G. T.} and Chyi, {J. I.}",

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doi = "10.1063/1.1704876",

language = "English",

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TY - JOUR

T1 - MgO/p-GaN enhancement mode metal-oxide semiconductor field-effect transistors

AU - Irokawa, Y.

AU - Nakano, Y.

AU - Ishiko, M.

AU - Kachi, T.

AU - Kim, J.

AU - Ren, F.

AU - Gila, B. P.

AU - Onstine, A. H.

AU - Abernathy, C. R.

AU - Pearton, S. J.

AU - Pan, C. C.

AU - Chen, G. T.

AU - Chyi, J. I.

PY - 2004/4/12

Y1 - 2004/4/12

N2 - The features of MgO/p-GaN enhanced mode metal-oxide semiconductor field-effect transistors (MOSFET) were analyzed. It was found that the GaN-based metal-oxide semiconductor (MOS) transistors had low leakage currents and power consumption along with higher current gain cutoff frequency. It was observed that the MOSFET devices showed better gate and epi/source breakdown characteristics with high quality of gate oxides grown under controlled conditions by molecular beam epitaxy. Analysis shows that at a drain-source voltage of 5 V the maximum transconductance was found to be 5.4 μS mm -1 for GaAs MOSFETs.

AB - The features of MgO/p-GaN enhanced mode metal-oxide semiconductor field-effect transistors (MOSFET) were analyzed. It was found that the GaN-based metal-oxide semiconductor (MOS) transistors had low leakage currents and power consumption along with higher current gain cutoff frequency. It was observed that the MOSFET devices showed better gate and epi/source breakdown characteristics with high quality of gate oxides grown under controlled conditions by molecular beam epitaxy. Analysis shows that at a drain-source voltage of 5 V the maximum transconductance was found to be 5.4 μS mm -1 for GaAs MOSFETs.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

MgO/p-GaN enhancement mode metal-oxide semiconductor field-effect transistors

Abstract

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