The features of MgO/p-GaN enhanced mode metal-oxide semiconductor field-effect transistors (MOSFET) were analyzed. It was found that the GaN-based metal-oxide semiconductor (MOS) transistors had low leakage currents and power consumption along with higher current gain cutoff frequency. It was observed that the MOSFET devices showed better gate and epi/source breakdown characteristics with high quality of gate oxides grown under controlled conditions by molecular beam epitaxy. Analysis shows that at a drain-source voltage of 5 V the maximum transconductance was found to be 5.4 μS mm -1 for GaAs MOSFETs.
|Number of pages||3|
|Journal||Applied Physics Letters|
|Publication status||Published - 2004 Apr 12|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)