MgO/p-GaN enhancement mode metal-oxide semiconductor field-effect transistors

Y. Irokawa; Y. Nakano; M. Ishiko; T. Kachi; J. Kim; F. Ren; B. P. Gila; A. H. Onstine; C. R. Abernathy; S. J. Pearton; C. C. Pan; G. T. Chen; J. I. Chyi

doi:10.1063/1.1704876

MgO/p-GaN enhancement mode metal-oxide semiconductor field-effect transistors

Y. Irokawa^*
, Y. Nakano
, M. Ishiko
, T. Kachi
, J. Kim
, F. Ren
, B. P. Gila
, A. H. Onstine
, C. R. Abernathy
, S. J. Pearton
, C. C. Pan
, G. T. Chen
, J. I. Chyi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

114 Citations (Scopus)

Abstract

The features of MgO/p-GaN enhanced mode metal-oxide semiconductor field-effect transistors (MOSFET) were analyzed. It was found that the GaN-based metal-oxide semiconductor (MOS) transistors had low leakage currents and power consumption along with higher current gain cutoff frequency. It was observed that the MOSFET devices showed better gate and epi/source breakdown characteristics with high quality of gate oxides grown under controlled conditions by molecular beam epitaxy. Analysis shows that at a drain-source voltage of 5 V the maximum transconductance was found to be 5.4 μS mm ^-1 for GaAs MOSFETs.

Original language	English
Pages (from-to)	2919-2921
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	15
DOIs	https://doi.org/10.1063/1.1704876
Publication status	Published - 2004 Apr 12
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1704876

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@article{4d568f7f3efd47a7a2da83650fad138d,

title = "MgO/p-GaN enhancement mode metal-oxide semiconductor field-effect transistors",

abstract = "The features of MgO/p-GaN enhanced mode metal-oxide semiconductor field-effect transistors (MOSFET) were analyzed. It was found that the GaN-based metal-oxide semiconductor (MOS) transistors had low leakage currents and power consumption along with higher current gain cutoff frequency. It was observed that the MOSFET devices showed better gate and epi/source breakdown characteristics with high quality of gate oxides grown under controlled conditions by molecular beam epitaxy. Analysis shows that at a drain-source voltage of 5 V the maximum transconductance was found to be 5.4 μS mm -1 for GaAs MOSFETs.",

author = "Y. Irokawa and Y. Nakano and M. Ishiko and T. Kachi and J. Kim and F. Ren and Gila, \{B. P.\} and Onstine, \{A. H.\} and Abernathy, \{C. R.\} and Pearton, \{S. J.\} and Pan, \{C. C.\} and Chen, \{G. T.\} and Chyi, \{J. I.\}",

year = "2004",

month = apr,

day = "12",

doi = "10.1063/1.1704876",

language = "English",

volume = "84",

pages = "2919--2921",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - MgO/p-GaN enhancement mode metal-oxide semiconductor field-effect transistors

AU - Irokawa, Y.

AU - Nakano, Y.

AU - Ishiko, M.

AU - Kachi, T.

AU - Kim, J.

AU - Ren, F.

AU - Gila, B. P.

AU - Onstine, A. H.

AU - Abernathy, C. R.

AU - Pearton, S. J.

AU - Pan, C. C.

AU - Chen, G. T.

AU - Chyi, J. I.

PY - 2004/4/12

Y1 - 2004/4/12

N2 - The features of MgO/p-GaN enhanced mode metal-oxide semiconductor field-effect transistors (MOSFET) were analyzed. It was found that the GaN-based metal-oxide semiconductor (MOS) transistors had low leakage currents and power consumption along with higher current gain cutoff frequency. It was observed that the MOSFET devices showed better gate and epi/source breakdown characteristics with high quality of gate oxides grown under controlled conditions by molecular beam epitaxy. Analysis shows that at a drain-source voltage of 5 V the maximum transconductance was found to be 5.4 μS mm -1 for GaAs MOSFETs.

AB - The features of MgO/p-GaN enhanced mode metal-oxide semiconductor field-effect transistors (MOSFET) were analyzed. It was found that the GaN-based metal-oxide semiconductor (MOS) transistors had low leakage currents and power consumption along with higher current gain cutoff frequency. It was observed that the MOSFET devices showed better gate and epi/source breakdown characteristics with high quality of gate oxides grown under controlled conditions by molecular beam epitaxy. Analysis shows that at a drain-source voltage of 5 V the maximum transconductance was found to be 5.4 μS mm -1 for GaAs MOSFETs.

UR - https://www.scopus.com/pages/publications/2342590717

U2 - 10.1063/1.1704876

DO - 10.1063/1.1704876

M3 - Article

AN - SCOPUS:2342590717

SN - 0003-6951

VL - 84

SP - 2919

EP - 2921

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

ER -

MgO/p-GaN enhancement mode metal-oxide semiconductor field-effect transistors

Abstract

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