Micro-architecture embedding ultra-thin interlayer to bond diamond and silicon via direct fusion

Jong Cheol Kim, Jongsik Kim, Yan Xin, Jinhyung Lee, Young Gyun Kim, Ghatu Subhash, Rajiv K. Singh, Arul C. Arjunan, Haigun Lee

Research output: Contribution to journalArticlepeer-review


The continuous demand on miniaturized electronic circuits bearing high power density illuminates the need to modify the silicon-on-insulator-based chip architecture. This is because of the low thermal conductivity of the few hundred nanometer-thick insulator present between the silicon substrate and active layers. The thick insulator is notorious for releasing the heat generated from the active layers during the operation of devices, leading to degradation in their performance and thus reducing their lifetime. To avoid the heat accumulation, we propose a method to fabricate the silicon-on-diamond (SOD) microstructure featured by an exceptionally thin silicon oxycarbide interlayer (∼3 nm). While exploiting the diamond as an insulator, we employ spark plasma sintering to render the silicon directly fused to the diamond. Notably, this process can manufacture the SOD microarchitecture via a simple/rapid way and incorporates the ultra-thin interlayer for minute thermal resistance. The method invented herein expects to minimize the thermal interfacial resistance of the devices and is thus deemed as a breakthrough appealing to the current chip industry.

Original languageEnglish
Article number211601
JournalApplied Physics Letters
Issue number21
Publication statusPublished - 2018 May 21

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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