Micro-light-emitting diode with n-GaN/NiO/Au-based resistive-switching electrode for compact driving circuitry

Byeong Ryong Lee, Ju Hyun Park, Tae Geun Kim

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)


Micro-light-emitting diode (μLED) displays have been receiving great attention due to their outperformance over competitor technologies such as organic LED and liquid crystal displays. However, the transfer of the μLED chips onto the backplane and their driving technology are technical hurdles for developing future μLED displays. Here, we introduce a simple method to effectively control each μLED pixel by using light-emitting memories (LEMs), in the form of μLEDs with n-GaN/NiO/Au-based resistive switching elements, which have a unipolar switching behavior with good retention (>105 s) and acceptably high on/off ratios (102) at an operating voltage of 4 V. The resulting devices optically exhibited higher output powers than typical indium tin oxide-based μLEDs. In addition, we investigated the switching mechanism of the proposed LEM device using transmission electron microscopy and secondary-ion mass spectroscopy. The proposed method is expected to offer an innovative route for driving future image-storage displays with high resolution.

Original languageEnglish
Article number153762
JournalJournal of Alloys and Compounds
Publication statusPublished - 2020 May 15

Bibliographical note

Funding Information:
This work was supported by National Research Foundation of Korea funded by the Korean Government (No. 2016R1A3B1908249 ).

Publisher Copyright:
© 2020


  • Driving technology
  • Light-emitting memory
  • Micro-light-emitting diode display
  • Oxygen vacancy
  • Resistive random access memory switch

ASJC Scopus subject areas

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry


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