Micro-Raman studies of thermal stress effects in GaN heteroepitaxial layers and self-heating effects in AlGaN/GaN HEMT structures

Jihyun Kim; J. A. Freitas; J. Mittereder; E. R. Glaser; D. S. Katzer; S. J. Pearton; F. Ren; S. Guo; B. Albert

Micro-Raman studies of thermal stress effects in GaN heteroepitaxial layers and self-heating effects in AlGaN/GaN HEMT structures

Jihyun Kim, J. A. Freitas, J. Mittereder, E. R. Glaser, D. S. Katzer, S. J. Pearton, F. Ren, S. Guo, B. Albert

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII) -and- Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI
Publisher	Electrochemical Society Inc.
Pages	129
Number of pages	1
Edition	2
ISBN (Electronic)	9781607685395
Publication status	Published - 2006
Externally published	Yes
Event	43rd State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII)and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI Symposium - 208th Meetingof the Electrochemical Society - Los Angeles, CA, United States Duration: 2005 Oct 16 → 2005 Oct 21

Publication series

Name	ECS Transactions
Number	2
Volume	1
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	43rd State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII)and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI Symposium - 208th Meetingof the Electrochemical Society
Country/Territory	United States
City	Los Angeles, CA
Period	05/10/16 → 05/10/21

ASJC Scopus subject areas

Engineering(all)

Cite this

Kim, J., Freitas, J. A., Mittereder, J., Glaser, E. R., Katzer, D. S., Pearton, S. J., Ren, F., Guo, S., & Albert, B. (2006). Micro-Raman studies of thermal stress effects in GaN heteroepitaxial layers and self-heating effects in AlGaN/GaN HEMT structures. In State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII) -and- Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI (2 ed., pp. 129). (ECS Transactions; Vol. 1, No. 2). Electrochemical Society Inc..

Micro-Raman studies of thermal stress effects in GaN heteroepitaxial layers and self-heating effects in AlGaN/GaN HEMT structures. / Kim, Jihyun; Freitas, J. A.; Mittereder, J. et al.
State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII) -and- Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI. 2. ed. Electrochemical Society Inc., 2006. p. 129 (ECS Transactions; Vol. 1, No. 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kim, J, Freitas, JA, Mittereder, J, Glaser, ER, Katzer, DS, Pearton, SJ, Ren, F, Guo, S & Albert, B 2006, Micro-Raman studies of thermal stress effects in GaN heteroepitaxial layers and self-heating effects in AlGaN/GaN HEMT structures. in State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII) -and- Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI. 2 edn, ECS Transactions, no. 2, vol. 1, Electrochemical Society Inc., pp. 129, 43rd State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII)and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI Symposium - 208th Meetingof the Electrochemical Society, Los Angeles, CA, United States, 05/10/16.

Kim J, Freitas JA, Mittereder J, Glaser ER, Katzer DS, Pearton SJ et al. Micro-Raman studies of thermal stress effects in GaN heteroepitaxial layers and self-heating effects in AlGaN/GaN HEMT structures. In State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII) -and- Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI. 2 ed. Electrochemical Society Inc. 2006. p. 129. (ECS Transactions; 2).

Kim, Jihyun ; Freitas, J. A. ; Mittereder, J. et al. / Micro-Raman studies of thermal stress effects in GaN heteroepitaxial layers and self-heating effects in AlGaN/GaN HEMT structures. State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII) -and- Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI. 2. ed. Electrochemical Society Inc., 2006. pp. 129 (ECS Transactions; 2).

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title = "Micro-Raman studies of thermal stress effects in GaN heteroepitaxial layers and self-heating effects in AlGaN/GaN HEMT structures",

author = "Jihyun Kim and Freitas, {J. A.} and J. Mittereder and Glaser, {E. R.} and Katzer, {D. S.} and Pearton, {S. J.} and F. Ren and S. Guo and B. Albert",

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note = "43rd State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII)and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI Symposium - 208th Meetingof the Electrochemical Society ; Conference date: 16-10-2005 Through 21-10-2005",

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AU - Kim, Jihyun

AU - Freitas, J. A.

AU - Mittereder, J.

AU - Glaser, E. R.

AU - Katzer, D. S.

AU - Pearton, S. J.

AU - Ren, F.

AU - Guo, S.

AU - Albert, B.

PY - 2006

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M3 - Conference contribution

AN - SCOPUS:32844475781

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BT - State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII) -and- Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI

PB - Electrochemical Society Inc.

T2 - 43rd State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII)and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI Symposium - 208th Meetingof the Electrochemical Society

Y2 - 16 October 2005 through 21 October 2005

ER -

Micro-Raman studies of thermal stress effects in GaN heteroepitaxial layers and self-heating effects in AlGaN/GaN HEMT structures

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Other

ASJC Scopus subject areas

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Cite this