Microstructural and magnetic properties of CoFeZr films and the tunnel magnetoresistance behaviors of the magnetic tunnel junctions with amorphous CoFeZr ferromagnetic layers

Jin Oh Song; Seong Rae Lee

doi:10.1016/j.jmmm.2006.10.608

Microstructural and magnetic properties of CoFeZr films and the tunnel magnetoresistance behaviors of the magnetic tunnel junctions with amorphous CoFeZr ferromagnetic layers

Jin Oh Song
, Seong Rae Lee^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We investigated the composition dependence of the microstructure and magnetic properties of Co₉₀Fe₁₀-Zr film and the thermal and structural stability of MTJs with CoFeZr layers. As the Zr concentration in the Co₉₀Fe₁₀-Zr film increased, the grain size decreased rapidly, and the alloy films became a homogeneous amorphous phase when the concentration of Zr exceeded 15 at%. The TMR ratio of the MTJs with Co₉₀Fe₁₀ layers decreased when the samples were annealed at a temperature above 300 °C, whereas that of the MTJs with amorphous CoFeZr layers only started to decrease when they were annealed at a temperature above 350 °C. The MTJs with CoFeZr layers retained a significant TMR value of 28%, even after annealing at 450 °C. The enhanced structural quality of the interfaces improved the thermal stability of the MTJs with amorphous CoFeZr layers.

Original language	English
Pages (from-to)	1923-1925
Number of pages	3
Journal	Journal of Magnetism and Magnetic Materials
Volume	310
Issue number	2 SUPPL. PART 3
DOIs	https://doi.org/10.1016/j.jmmm.2006.10.608
Publication status	Published - 2007 Mar

Bibliographical note

Funding Information:
This work was supported by grants from the Korea Research Foundation (KRF-2004-005-C00068) and the Basic Research Program of the KOSEF (R-01-2005-000-11188-0).

Keywords

Amorphous CoFeZr
MTJ
Microstructure
Stability

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1016/j.jmmm.2006.10.608

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Microstructural and magnetic properties of CoFeZr films and the tunnel magnetoresistance behaviors of the magnetic tunnel junctions with amorphous CoFeZr ferromagnetic layers. / Song, Jin Oh; Lee, Seong Rae.
In: Journal of Magnetism and Magnetic Materials, Vol. 310, No. 2 SUPPL. PART 3, 03.2007, p. 1923-1925.

Research output: Contribution to journal › Article › peer-review

@article{722d94cac7c64e078cf74f3f5d03b5fb,

title = "Microstructural and magnetic properties of CoFeZr films and the tunnel magnetoresistance behaviors of the magnetic tunnel junctions with amorphous CoFeZr ferromagnetic layers",

abstract = "We investigated the composition dependence of the microstructure and magnetic properties of Co90Fe10-Zr film and the thermal and structural stability of MTJs with CoFeZr layers. As the Zr concentration in the Co90Fe10-Zr film increased, the grain size decreased rapidly, and the alloy films became a homogeneous amorphous phase when the concentration of Zr exceeded 15 at\%. The TMR ratio of the MTJs with Co90Fe10 layers decreased when the samples were annealed at a temperature above 300 °C, whereas that of the MTJs with amorphous CoFeZr layers only started to decrease when they were annealed at a temperature above 350 °C. The MTJs with CoFeZr layers retained a significant TMR value of 28\%, even after annealing at 450 °C. The enhanced structural quality of the interfaces improved the thermal stability of the MTJs with amorphous CoFeZr layers.",

keywords = "Amorphous CoFeZr, MTJ, Microstructure, Stability",

author = "Song, \{Jin Oh\} and Lee, \{Seong Rae\}",

note = "Funding Information: This work was supported by grants from the Korea Research Foundation (KRF-2004-005-C00068) and the Basic Research Program of the KOSEF (R-01-2005-000-11188-0).",

year = "2007",

month = mar,

doi = "10.1016/j.jmmm.2006.10.608",

language = "English",

volume = "310",

pages = "1923--1925",

journal = "Journal of Magnetism and Magnetic Materials",

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number = "2 SUPPL. PART 3",

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T1 - Microstructural and magnetic properties of CoFeZr films and the tunnel magnetoresistance behaviors of the magnetic tunnel junctions with amorphous CoFeZr ferromagnetic layers

AU - Song, Jin Oh

AU - Lee, Seong Rae

N1 - Funding Information: This work was supported by grants from the Korea Research Foundation (KRF-2004-005-C00068) and the Basic Research Program of the KOSEF (R-01-2005-000-11188-0).

PY - 2007/3

Y1 - 2007/3

N2 - We investigated the composition dependence of the microstructure and magnetic properties of Co90Fe10-Zr film and the thermal and structural stability of MTJs with CoFeZr layers. As the Zr concentration in the Co90Fe10-Zr film increased, the grain size decreased rapidly, and the alloy films became a homogeneous amorphous phase when the concentration of Zr exceeded 15 at%. The TMR ratio of the MTJs with Co90Fe10 layers decreased when the samples were annealed at a temperature above 300 °C, whereas that of the MTJs with amorphous CoFeZr layers only started to decrease when they were annealed at a temperature above 350 °C. The MTJs with CoFeZr layers retained a significant TMR value of 28%, even after annealing at 450 °C. The enhanced structural quality of the interfaces improved the thermal stability of the MTJs with amorphous CoFeZr layers.

AB - We investigated the composition dependence of the microstructure and magnetic properties of Co90Fe10-Zr film and the thermal and structural stability of MTJs with CoFeZr layers. As the Zr concentration in the Co90Fe10-Zr film increased, the grain size decreased rapidly, and the alloy films became a homogeneous amorphous phase when the concentration of Zr exceeded 15 at%. The TMR ratio of the MTJs with Co90Fe10 layers decreased when the samples were annealed at a temperature above 300 °C, whereas that of the MTJs with amorphous CoFeZr layers only started to decrease when they were annealed at a temperature above 350 °C. The MTJs with CoFeZr layers retained a significant TMR value of 28%, even after annealing at 450 °C. The enhanced structural quality of the interfaces improved the thermal stability of the MTJs with amorphous CoFeZr layers.

KW - Amorphous CoFeZr

KW - MTJ

KW - Microstructure

KW - Stability

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DO - 10.1016/j.jmmm.2006.10.608

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AN - SCOPUS:33847684268

SN - 0304-8853

VL - 310

SP - 1923

EP - 1925

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

IS - 2 SUPPL. PART 3

ER -

Microstructural and magnetic properties of CoFeZr films and the tunnel magnetoresistance behaviors of the magnetic tunnel junctions with amorphous CoFeZr ferromagnetic layers

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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