Microstructural evolution and dielectric properties of Cu-deficient and Cu-excess CaCu3Ti4O12 ceramics

Kang Min Kim; Jong Heun Lee; Kyung Min Lee; Doh Yeon Kim; Doh Hyung Riu; Sung Bo Lee

doi:10.1016/j.materresbull.2007.03.014

Microstructural evolution and dielectric properties of Cu-deficient and Cu-excess CaCu₃Ti₄O₁₂ ceramics

Kang Min Kim, Jong Heun Lee, Kyung Min Lee, Doh Yeon Kim, Doh Hyung Riu, Sung Bo Lee

Research output: Contribution to journal › Article › peer-review

46 Citations (Scopus)

Abstract

The microstructural evolution and dielectric properties of CaCu_3-xTi₄O_12-x (3 - x = 2.8-3.05) ceramics were investigated. Normal grain growth behavior was observed at Cu/Ca ≤ 2.9, while abnormal grain growth was observed at Cu/Ca ≥ 2.95. A CuO-rich intergranular liquid phase at Cu/Ca ≥ 2.95 and angular grain morphology were the main reasons for abnormal grain growth. However, the abundant intergranular liquid at Cu/Ca = 3.05 significantly affected the relative dielectric permittivity and dielectric loss. The CuO composition is the key parameter that determines the microstructure and dielectric properties of CCTO ceramics.

Original language	English
Pages (from-to)	284-291
Number of pages	8
Journal	Materials Research Bulletin
Volume	43
Issue number	2
DOIs	https://doi.org/10.1016/j.materresbull.2007.03.014
Publication status	Published - 2008 Feb 5

Keywords

A. Electronic materials
A. Oxides
B. Dielectric properties

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1016/j.materresbull.2007.03.014

Cite this

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title = "Microstructural evolution and dielectric properties of Cu-deficient and Cu-excess CaCu3Ti4O12 ceramics",

abstract = "The microstructural evolution and dielectric properties of CaCu3-xTi4O12-x (3 - x = 2.8-3.05) ceramics were investigated. Normal grain growth behavior was observed at Cu/Ca ≤ 2.9, while abnormal grain growth was observed at Cu/Ca ≥ 2.95. A CuO-rich intergranular liquid phase at Cu/Ca ≥ 2.95 and angular grain morphology were the main reasons for abnormal grain growth. However, the abundant intergranular liquid at Cu/Ca = 3.05 significantly affected the relative dielectric permittivity and dielectric loss. The CuO composition is the key parameter that determines the microstructure and dielectric properties of CCTO ceramics.",

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AU - Kim, Kang Min

AU - Lee, Jong Heun

AU - Lee, Kyung Min

AU - Kim, Doh Yeon

AU - Riu, Doh Hyung

AU - Lee, Sung Bo

PY - 2008/2/5

Y1 - 2008/2/5

N2 - The microstructural evolution and dielectric properties of CaCu3-xTi4O12-x (3 - x = 2.8-3.05) ceramics were investigated. Normal grain growth behavior was observed at Cu/Ca ≤ 2.9, while abnormal grain growth was observed at Cu/Ca ≥ 2.95. A CuO-rich intergranular liquid phase at Cu/Ca ≥ 2.95 and angular grain morphology were the main reasons for abnormal grain growth. However, the abundant intergranular liquid at Cu/Ca = 3.05 significantly affected the relative dielectric permittivity and dielectric loss. The CuO composition is the key parameter that determines the microstructure and dielectric properties of CCTO ceramics.

AB - The microstructural evolution and dielectric properties of CaCu3-xTi4O12-x (3 - x = 2.8-3.05) ceramics were investigated. Normal grain growth behavior was observed at Cu/Ca ≤ 2.9, while abnormal grain growth was observed at Cu/Ca ≥ 2.95. A CuO-rich intergranular liquid phase at Cu/Ca ≥ 2.95 and angular grain morphology were the main reasons for abnormal grain growth. However, the abundant intergranular liquid at Cu/Ca = 3.05 significantly affected the relative dielectric permittivity and dielectric loss. The CuO composition is the key parameter that determines the microstructure and dielectric properties of CCTO ceramics.

KW - A. Electronic materials

KW - A. Oxides

KW - B. Dielectric properties

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