Abstract
The microstructural evolution and dielectric properties of CaCu3-xTi4O12-x (3 - x = 2.8-3.05) ceramics were investigated. Normal grain growth behavior was observed at Cu/Ca ≤ 2.9, while abnormal grain growth was observed at Cu/Ca ≥ 2.95. A CuO-rich intergranular liquid phase at Cu/Ca ≥ 2.95 and angular grain morphology were the main reasons for abnormal grain growth. However, the abundant intergranular liquid at Cu/Ca = 3.05 significantly affected the relative dielectric permittivity and dielectric loss. The CuO composition is the key parameter that determines the microstructure and dielectric properties of CCTO ceramics.
Original language | English |
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Pages (from-to) | 284-291 |
Number of pages | 8 |
Journal | Materials Research Bulletin |
Volume | 43 |
Issue number | 2 |
DOIs | |
Publication status | Published - 2008 Feb 5 |
Keywords
- A. Electronic materials
- A. Oxides
- B. Dielectric properties
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering