Microstructural evolution and dielectric properties of SiO2-doped CaCu3Ti4O12 ceramics

Kang Min Kim; Sun Jung Kim; Jong Heun Lee; Doh Yeon Kim

doi:10.1016/j.jeurceramsoc.2007.02.081

Microstructural evolution and dielectric properties of SiO₂-doped CaCu₃Ti₄O₁₂ ceramics

Kang Min Kim, Sun Jung Kim, Jong Heun Lee, Doh Yeon Kim

Research output: Contribution to journal › Article › peer-review

48 Citations (Scopus)

Abstract

The abnormal grain growth (AGG) behavior of undoped and SiO₂-doped CaCu₃Ti₄O₁₂ (CCTO) ceramics were investigated. With the addition of 2 wt.% SiO₂, the AGG-triggering temperature decreased from 1100 to 1060 °C, and the temperature for obtaining a uniform and coarse microstructure decreased from 1140 to 1100 °C. The lowering of the AGG temperature by SiO₂ addition was attributed to the formation of a CuO-SiO₂-rich intergranular phase at lower temperature. The apparent dielectric permittivity of coarse SiO₂-doped CCTO ceramics was ∼10 times higher than that of fine SiO₂-doped CCTO ceramics at the frequency of 10³-10⁵ Hz. The doping of SiO₂ to CCTO ceramics provides an efficient route of improving the dielectric properties via grain coarsening. The correlation between the microstructure and apparent permittivity suggests the presence of a barrier layer near the grain boundary.

Original language	English
Pages (from-to)	3991-3995
Number of pages	5
Journal	Journal of the European Ceramic Society
Volume	27
Issue number	13-15
DOIs	https://doi.org/10.1016/j.jeurceramsoc.2007.02.081
Publication status	Published - 2007

Keywords

CaCuTiO
Dielectric properties
Grain boundaries
Grain growth

ASJC Scopus subject areas

Ceramics and Composites
Materials Chemistry

Access to Document

10.1016/j.jeurceramsoc.2007.02.081

Cite this

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title = "Microstructural evolution and dielectric properties of SiO2-doped CaCu3Ti4O12 ceramics",

abstract = "The abnormal grain growth (AGG) behavior of undoped and SiO2-doped CaCu3Ti4O12 (CCTO) ceramics were investigated. With the addition of 2 wt.% SiO2, the AGG-triggering temperature decreased from 1100 to 1060 °C, and the temperature for obtaining a uniform and coarse microstructure decreased from 1140 to 1100 °C. The lowering of the AGG temperature by SiO2 addition was attributed to the formation of a CuO-SiO2-rich intergranular phase at lower temperature. The apparent dielectric permittivity of coarse SiO2-doped CCTO ceramics was ∼10 times higher than that of fine SiO2-doped CCTO ceramics at the frequency of 103-105 Hz. The doping of SiO2 to CCTO ceramics provides an efficient route of improving the dielectric properties via grain coarsening. The correlation between the microstructure and apparent permittivity suggests the presence of a barrier layer near the grain boundary.",

keywords = "CaCuTiO, Dielectric properties, Grain boundaries, Grain growth",

author = "Kim, {Kang Min} and Kim, {Sun Jung} and Lee, {Jong Heun} and Kim, {Doh Yeon}",

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T1 - Microstructural evolution and dielectric properties of SiO2-doped CaCu3Ti4O12 ceramics

AU - Kim, Kang Min

AU - Kim, Sun Jung

AU - Lee, Jong Heun

AU - Kim, Doh Yeon

PY - 2007

Y1 - 2007

N2 - The abnormal grain growth (AGG) behavior of undoped and SiO2-doped CaCu3Ti4O12 (CCTO) ceramics were investigated. With the addition of 2 wt.% SiO2, the AGG-triggering temperature decreased from 1100 to 1060 °C, and the temperature for obtaining a uniform and coarse microstructure decreased from 1140 to 1100 °C. The lowering of the AGG temperature by SiO2 addition was attributed to the formation of a CuO-SiO2-rich intergranular phase at lower temperature. The apparent dielectric permittivity of coarse SiO2-doped CCTO ceramics was ∼10 times higher than that of fine SiO2-doped CCTO ceramics at the frequency of 103-105 Hz. The doping of SiO2 to CCTO ceramics provides an efficient route of improving the dielectric properties via grain coarsening. The correlation between the microstructure and apparent permittivity suggests the presence of a barrier layer near the grain boundary.

AB - The abnormal grain growth (AGG) behavior of undoped and SiO2-doped CaCu3Ti4O12 (CCTO) ceramics were investigated. With the addition of 2 wt.% SiO2, the AGG-triggering temperature decreased from 1100 to 1060 °C, and the temperature for obtaining a uniform and coarse microstructure decreased from 1140 to 1100 °C. The lowering of the AGG temperature by SiO2 addition was attributed to the formation of a CuO-SiO2-rich intergranular phase at lower temperature. The apparent dielectric permittivity of coarse SiO2-doped CCTO ceramics was ∼10 times higher than that of fine SiO2-doped CCTO ceramics at the frequency of 103-105 Hz. The doping of SiO2 to CCTO ceramics provides an efficient route of improving the dielectric properties via grain coarsening. The correlation between the microstructure and apparent permittivity suggests the presence of a barrier layer near the grain boundary.

KW - CaCuTiO

KW - Dielectric properties

KW - Grain boundaries

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