Microstructural study of the alternating current bias-enhanced nucleation and growth of diamond on (001) silicon wafers

Tae Yeon Seong; Do Geun Kim; Kwang Ki Choi; Young Joon Baik

doi:10.1063/1.119173

Microstructural study of the alternating current bias-enhanced nucleation and growth of diamond on (001) silicon wafers

Tae Yeon Seong, Do Geun Kim, Kwang Ki Choi, Young Joon Baik

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

The bias-enhanced nucleation (BEN) and growth of diamond by microwave plasma chemical vapor deposition have been investigated using transmission electron microscopy (TEM), transmission electron diffraction (TED), atomic force microscopy (AFM), and scanning electron microscopy (SEM) full stop TED results show epitaxial relations between SiC and Si, and diamond and SiC, which depend on the BEN time. The formation of highly oriented (001) diamond films is obtained after 25 min BEN, in which the heteroepitaxially oriented β-SiC and hence the heteroepitaxially oriented diamond crystallites play an important role. TEM reveals the β-SiC crystallites 2-10 nm in size and the diamond crystallites 5-30 nm across. As the nucleation time increases, the density of the β-SiC crystallites increases from ∼2.7×10¹¹ to ∼1.6×10¹² cm^-2, while that of the diamond crystallites varies from ∼2.0×10⁹ to ∼4.1×10¹⁰ cm^-2. Discrepancy between the densities obtained using TEM and AFM is discussed.

Original language	English
Pages (from-to)	3368-3370
Number of pages	3
Journal	Applied Physics Letters
Volume	70
Issue number	25
DOIs	https://doi.org/10.1063/1.119173
Publication status	Published - 1997 Jun 23
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{df4fc4d6db9c41d9902122a0040925c0,

title = "Microstructural study of the alternating current bias-enhanced nucleation and growth of diamond on (001) silicon wafers",

abstract = "The bias-enhanced nucleation (BEN) and growth of diamond by microwave plasma chemical vapor deposition have been investigated using transmission electron microscopy (TEM), transmission electron diffraction (TED), atomic force microscopy (AFM), and scanning electron microscopy (SEM) full stop TED results show epitaxial relations between SiC and Si, and diamond and SiC, which depend on the BEN time. The formation of highly oriented (001) diamond films is obtained after 25 min BEN, in which the heteroepitaxially oriented β-SiC and hence the heteroepitaxially oriented diamond crystallites play an important role. TEM reveals the β-SiC crystallites 2-10 nm in size and the diamond crystallites 5-30 nm across. As the nucleation time increases, the density of the β-SiC crystallites increases from ∼2.7×1011 to ∼1.6×1012 cm-2, while that of the diamond crystallites varies from ∼2.0×109 to ∼4.1×1010 cm-2. Discrepancy between the densities obtained using TEM and AFM is discussed.",

author = "Seong, {Tae Yeon} and Kim, {Do Geun} and Choi, {Kwang Ki} and Baik, {Young Joon}",

year = "1997",

month = jun,

day = "23",

doi = "10.1063/1.119173",

language = "English",

volume = "70",

pages = "3368--3370",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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TY - JOUR

T1 - Microstructural study of the alternating current bias-enhanced nucleation and growth of diamond on (001) silicon wafers

AU - Seong, Tae Yeon

AU - Kim, Do Geun

AU - Choi, Kwang Ki

AU - Baik, Young Joon

PY - 1997/6/23

Y1 - 1997/6/23

N2 - The bias-enhanced nucleation (BEN) and growth of diamond by microwave plasma chemical vapor deposition have been investigated using transmission electron microscopy (TEM), transmission electron diffraction (TED), atomic force microscopy (AFM), and scanning electron microscopy (SEM) full stop TED results show epitaxial relations between SiC and Si, and diamond and SiC, which depend on the BEN time. The formation of highly oriented (001) diamond films is obtained after 25 min BEN, in which the heteroepitaxially oriented β-SiC and hence the heteroepitaxially oriented diamond crystallites play an important role. TEM reveals the β-SiC crystallites 2-10 nm in size and the diamond crystallites 5-30 nm across. As the nucleation time increases, the density of the β-SiC crystallites increases from ∼2.7×1011 to ∼1.6×1012 cm-2, while that of the diamond crystallites varies from ∼2.0×109 to ∼4.1×1010 cm-2. Discrepancy between the densities obtained using TEM and AFM is discussed.

AB - The bias-enhanced nucleation (BEN) and growth of diamond by microwave plasma chemical vapor deposition have been investigated using transmission electron microscopy (TEM), transmission electron diffraction (TED), atomic force microscopy (AFM), and scanning electron microscopy (SEM) full stop TED results show epitaxial relations between SiC and Si, and diamond and SiC, which depend on the BEN time. The formation of highly oriented (001) diamond films is obtained after 25 min BEN, in which the heteroepitaxially oriented β-SiC and hence the heteroepitaxially oriented diamond crystallites play an important role. TEM reveals the β-SiC crystallites 2-10 nm in size and the diamond crystallites 5-30 nm across. As the nucleation time increases, the density of the β-SiC crystallites increases from ∼2.7×1011 to ∼1.6×1012 cm-2, while that of the diamond crystallites varies from ∼2.0×109 to ∼4.1×1010 cm-2. Discrepancy between the densities obtained using TEM and AFM is discussed.

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U2 - 10.1063/1.119173

DO - 10.1063/1.119173

M3 - Article

AN - SCOPUS:0009561191

SN - 0003-6951

VL - 70

SP - 3368

EP - 3370

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

ER -

Microstructural study of the alternating current bias-enhanced nucleation and growth of diamond on (001) silicon wafers

Abstract

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