Abstract
KTiNbO5 (KTN) and K3Ti5NbO14 (3K5TN) ceramics sintered at 1150 C and 1125 C, respectively, exhibited a dense, homogeneous microstructure with a high relative density (≥96% of the theoretical density). Abnormal grain growth occurred in both specimens during sintering, and large (002) and (001) grains developed in KTN and 3K5TN ceramics, respectively. A dielectric constant (εr) of 13 and a dielectric loss of 2.9% at 10 MHz were obtained from KTN ceramics sintered at 1150 C. The 3K5TN ceramics sintered at 1125 C showed an εr of 15 and a dielectric loss of 12% at 10 MHz. The resistivity of KTN and 3K5TN ceramics was low and their εr and dielectric loss values displayed low-frequency dispersion (LFD); the presence of K+ ions between the layers could be responsible for their low resistivity and LFD.
| Original language | English |
|---|---|
| Pages (from-to) | 5861-5867 |
| Number of pages | 7 |
| Journal | Ceramics International |
| Volume | 40 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 2014 May |
Bibliographical note
Funding Information:This work was supported by the Industrial Strategic Technology Development Program, 10041232 , “Development of synthesis method of exfoliated inorganic nanosheets with a high dielectric constant of >300 and the corresponding thin films applicable for the fabrication of high performance MLCC,” funded by the Ministry of Knowledge Economy (MKE, Korea) .
Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
Keywords
- C. Dielectric properties
- Layered metal-oxide
- Multilayer ceramic capacitor
- Nanosheets
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Process Chemistry and Technology
- Surfaces, Coatings and Films
- Materials Chemistry