BaSm2Ti4O12 (BST) film grown at room temperature was amorphous, while the film grown at 300 °C was also amorphous but contained a small amount of crystalline Sm2Ti2O7 (ST). The crystalline BST phase was formed when the film was grown at 700 °C and subjected to rapid thermal annealing (RTA) at 900 °C. On the other hand, the ST phase was formed in the film grown at 300 °C and subjected to RTA at 900 °C. A high capacitance density of 2.12 fF/μm2 and a low leakage current density of 1.15 fA/pF V were obtained from the 150 nm-thick BST film grown at 300 °C. Its capacitance density could conceivably be further increased by decreasing the thickness of the film. It had linear and quadratic coefficients of capacitance of -785 ppm/V and 5.8 ppm/V2 at 100 kHz, respectively. Its temperature coefficient of capacitance was also low, being approximately 255 ppm/°C at 100 kHz.
|Number of pages
|Journal of the European Ceramic Society
|8-9 SPEC. ISS.
|Published - 2007
Bibliographical noteFunding Information:
This work was supported by the Ministry of Commerce, Industry and Energy through the Standardization project and one of the authors also acknowledges that this work was financially supported by the Ministry of Science and Technology through the NRL project.
- Electrical properties
ASJC Scopus subject areas
- Ceramics and Composites
- Materials Chemistry