Microstructure and dielectric properties of the Ti-rich BaO-TiO2 thin films for microwave devices

Bo Yun Jang; Young Hun Jeong; Suk Jin Lee; Kyong Jae Lee; Sahn Nahm; Ho Jung Sun; Hwack Joo Lee

doi:10.1016/j.jeurceramsoc.2005.09.020

Microstructure and dielectric properties of the Ti-rich BaO-TiO₂ thin films for microwave devices

Bo Yun Jang, Young Hun Jeong, Suk Jin Lee, Kyong Jae Lee, Sahn Nahm, Ho Jung Sun, Hwack Joo Lee

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Ti-rich BaO-TiO₂ thin films were grown on a Pt/Ti/SiO₂/Si substrate using rf sputtering and the structural and dielectric properties of the films were investigated. For the film grown at room temperature and rapidly thermal annealed (RTA) at 900 °C for 3 min, an amorphous phase with a small BaTi₅ O₁₃ crystalline phase was formed. As the growth temperature increased, the amount of the BaTi₅O₁₁ crystalline phase increased. For the film grown at 350 °C and RTA at 900 °C for 3 min, the homogeneous BaTi₅O₁₁ phase was formed. The BaTi₄O₉ phase was developed when the growth temperature exceeded 450 °C. The thin film with the homogeneous BaTi₄O₉ phase was obtained when the film was grown at 550 °C and RTA at 900 °C for 3 min. The dielectric properties of the films were measured at 1-6 GHz range. The dielectric constant (ε_r) of the BaTi₅ O₁₁ film was about 33 and the dissipation factor was about 0.01. The ε_r and the dissipation factor of the BaTi₄O₉ film were about 37 and 0.005, respectively.

Original language	English
Pages (from-to)	1913-1916
Number of pages	4
Journal	Journal of the European Ceramic Society
Volume	26
Issue number	10-11
DOIs	https://doi.org/10.1016/j.jeurceramsoc.2005.09.020
Publication status	Published - 2006

Bibliographical note

Funding Information:
This work was supported by the Ministry of Science and Technology through the project of Nano-Technology and one of the authors also acknowledges that this work was financially supported by the Ministry of Science and Technology through the NRL project.

Keywords

Capacitors
Dielectric properties
Films
Microstructure
Ti-rich BaO-TiO

ASJC Scopus subject areas

Ceramics and Composites
Materials Chemistry

Access to Document

10.1016/j.jeurceramsoc.2005.09.020

Cite this

@article{78d5500528d14e3da939bb3515ad9d04,

title = "Microstructure and dielectric properties of the Ti-rich BaO-TiO2 thin films for microwave devices",

abstract = "Ti-rich BaO-TiO2 thin films were grown on a Pt/Ti/SiO2/Si substrate using rf sputtering and the structural and dielectric properties of the films were investigated. For the film grown at room temperature and rapidly thermal annealed (RTA) at 900 °C for 3 min, an amorphous phase with a small BaTi5 O13 crystalline phase was formed. As the growth temperature increased, the amount of the BaTi5O11 crystalline phase increased. For the film grown at 350 °C and RTA at 900 °C for 3 min, the homogeneous BaTi5O11 phase was formed. The BaTi4O9 phase was developed when the growth temperature exceeded 450 °C. The thin film with the homogeneous BaTi4O9 phase was obtained when the film was grown at 550 °C and RTA at 900 °C for 3 min. The dielectric properties of the films were measured at 1-6 GHz range. The dielectric constant (εr) of the BaTi5 O11 film was about 33 and the dissipation factor was about 0.01. The εr and the dissipation factor of the BaTi4O9 film were about 37 and 0.005, respectively.",

keywords = "Capacitors, Dielectric properties, Films, Microstructure, Ti-rich BaO-TiO",

author = "Jang, {Bo Yun} and Jeong, {Young Hun} and Lee, {Suk Jin} and Lee, {Kyong Jae} and Sahn Nahm and Sun, {Ho Jung} and Lee, {Hwack Joo}",

note = "Funding Information: This work was supported by the Ministry of Science and Technology through the project of Nano-Technology and one of the authors also acknowledges that this work was financially supported by the Ministry of Science and Technology through the NRL project.",

year = "2006",

doi = "10.1016/j.jeurceramsoc.2005.09.020",

language = "English",

volume = "26",

pages = "1913--1916",

journal = "Journal of the European Ceramic Society",

issn = "0955-2219",

publisher = "Elsevier B.V.",

number = "10-11",

}

TY - JOUR

T1 - Microstructure and dielectric properties of the Ti-rich BaO-TiO2 thin films for microwave devices

AU - Jang, Bo Yun

AU - Jeong, Young Hun

AU - Lee, Suk Jin

AU - Lee, Kyong Jae

AU - Nahm, Sahn

AU - Sun, Ho Jung

AU - Lee, Hwack Joo

N1 - Funding Information: This work was supported by the Ministry of Science and Technology through the project of Nano-Technology and one of the authors also acknowledges that this work was financially supported by the Ministry of Science and Technology through the NRL project.

PY - 2006

Y1 - 2006

N2 - Ti-rich BaO-TiO2 thin films were grown on a Pt/Ti/SiO2/Si substrate using rf sputtering and the structural and dielectric properties of the films were investigated. For the film grown at room temperature and rapidly thermal annealed (RTA) at 900 °C for 3 min, an amorphous phase with a small BaTi5 O13 crystalline phase was formed. As the growth temperature increased, the amount of the BaTi5O11 crystalline phase increased. For the film grown at 350 °C and RTA at 900 °C for 3 min, the homogeneous BaTi5O11 phase was formed. The BaTi4O9 phase was developed when the growth temperature exceeded 450 °C. The thin film with the homogeneous BaTi4O9 phase was obtained when the film was grown at 550 °C and RTA at 900 °C for 3 min. The dielectric properties of the films were measured at 1-6 GHz range. The dielectric constant (εr) of the BaTi5 O11 film was about 33 and the dissipation factor was about 0.01. The εr and the dissipation factor of the BaTi4O9 film were about 37 and 0.005, respectively.

AB - Ti-rich BaO-TiO2 thin films were grown on a Pt/Ti/SiO2/Si substrate using rf sputtering and the structural and dielectric properties of the films were investigated. For the film grown at room temperature and rapidly thermal annealed (RTA) at 900 °C for 3 min, an amorphous phase with a small BaTi5 O13 crystalline phase was formed. As the growth temperature increased, the amount of the BaTi5O11 crystalline phase increased. For the film grown at 350 °C and RTA at 900 °C for 3 min, the homogeneous BaTi5O11 phase was formed. The BaTi4O9 phase was developed when the growth temperature exceeded 450 °C. The thin film with the homogeneous BaTi4O9 phase was obtained when the film was grown at 550 °C and RTA at 900 °C for 3 min. The dielectric properties of the films were measured at 1-6 GHz range. The dielectric constant (εr) of the BaTi5 O11 film was about 33 and the dissipation factor was about 0.01. The εr and the dissipation factor of the BaTi4O9 film were about 37 and 0.005, respectively.

KW - Capacitors

KW - Dielectric properties

KW - Films

KW - Microstructure

KW - Ti-rich BaO-TiO

UR - http://www.scopus.com/inward/record.url?scp=33645534584&partnerID=8YFLogxK

U2 - 10.1016/j.jeurceramsoc.2005.09.020

DO - 10.1016/j.jeurceramsoc.2005.09.020

M3 - Article

AN - SCOPUS:33645534584

SN - 0955-2219

VL - 26

SP - 1913

EP - 1916

JO - Journal of the European Ceramic Society

JF - Journal of the European Ceramic Society

IS - 10-11

ER -