Microstructure and electrical properties of amorphous Bi5Nb 3O15 films grown on Cu/Ti/SiO2/Si substrates using RF magnetron sputtering

Jin Seong Kim, Kyung Hoon Cho, Lee Seung Kang, Jong Woo Sun, Dong Soo Paik, Tae Geun Seong, Chong Yun Kang, Jong Hee Kim, Tae Hyun Sung, Sahn Nahm

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

Amorphous Bi5Nb3O15 (BNO) films were grown at room temperature (RT) on a Cu/Ti/SiO2/Si substrate using radio frequency magnetron sputtering. All the films were well formed on the Cu electrode with a sharp interface between the film and the electrode. The dielectric constant of the amorphous BNO film grown under 25 W was 46, with a low dissipation factor of 2.7% at 100 kHz. This film exhibited a low leakage current density of 5.5×10-8A/cm2 at 4.5 V and a large breakdown voltage of 7.2 V. However, the electrical properties deteriorated as the sputtering power and the growth temperature increased due to the increased surface roughness; this was because a film with a rough surface generally has a larger surface area, and there can be electric field intensification at surface asperity, which degrade the electrical properties of the film. In addition, the electrical properties were not influenced by the oxygen partial pressure (OPP) because the variation of OPP during the growth of the films did not affect their surface roughness. The amorphous BNO film grown on the Cu/Ti/SiO2/Si substrate at RT under 25 W may be a good candidate material for an embedded capacitor.

Original languageEnglish
Article number5721800
Pages (from-to)1462-1467
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume58
Issue number5
DOIs
Publication statusPublished - 2011 May

Bibliographical note

Funding Information:
Manuscript received October 11, 2010; revised January 3, 2011; accepted January 25, 2011. Date of publication February 28, 2011; date of current version April 22, 2011. This work was supported by a grant from the Fundamental Research and Development Program for Core Technology of Materials funded by the Ministry of Knowledge and Economy, Korea. The review of this paper was arranged by Editor D. Esseni. J.-S. Kim, D.-S. Paik, and S. Nahm are with the Department of Materials Science and Engineering, Korea University, Seoul 136-701, Korea (e-mail: snahm@korea.ac.kr). K.-H. Cho is with Virginia Polytechnic Institute and State University, Blacksburg, VA 2406 USA. L.-S. Kang is with the Plant Engineering Center, Institute for Advanced Engineering, Gyeonggi-Do 449-863, Korea. J.-W. Sun is with the Department of Materials Science and Engineering, Korea University, Seoul 136-701, Korea, and also with Semi-Conductor R&D Center, Samsung Electronics, Gyeonggi-Do 445-701, Korea. T.-G. Seong is with the Department of Nanosemiconductor, Korea University, Seoul 136-701, Korea. C.-Y. Kang is with the Thin Film Materials Research Center, Korea Institute of Science and Technology, Seoul 136-791, Korea. J.-H. Kim is with the Korea Institute of Ceramic Engineering and Technology, Seoul 153-801, Korea. T.-H. Sung is with the Department of Electrical Engineering, Hanyang University, Seoul 133-791, Korea. Color versions of one or more of the figures in this paper are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/TED.2011.2111454

Keywords

  • BiNbO thin films
  • Cu electrode
  • high dielectric constant
  • metal-insulator-metal (MIM) capacitor
  • surface roughness

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint

Dive into the research topics of 'Microstructure and electrical properties of amorphous Bi5Nb 3O15 films grown on Cu/Ti/SiO2/Si substrates using RF magnetron sputtering'. Together they form a unique fingerprint.

Cite this