Microstructure and microwave dielectric properties of Bi 12SiO 20 ceramics

Byoung Jik Jeong; Mi Ri Joung; Sang Hyo Kweon; Jin Seong Kim; Sahn Nahm; Ji Won Choi; Seong Ju Hwang

doi:10.1016/j.materresbull.2012.08.075

Microstructure and microwave dielectric properties of Bi ₁₂SiO ₂₀ ceramics

Byoung Jik Jeong, Mi Ri Joung, Sang Hyo Kweon, Jin Seong Kim, Sahn Nahm, Ji Won Choi, Seong Ju Hwang

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

Bi ₁₂SiO ₂₀ ceramics were well sintered at 800°C after calcination at 700°C. A liquid phase of composition Bi ₂O ₃ was formed during the sintering at temperatures ≥800°C and assisted the densification of the Bi ₁₂SiO ₂₀ ceramics. When the sintering temperature exceeded 800°C, however, the relative density, ε _r, and Q × f values of the Bi ₁₂SiO ₂₀ ceramics decreased, probably due to the formation of a large amount of the liquid phase. The Bi ₁₂SiO ₂₀ ceramics sintered at 800°C for 5.0 h exhibited excellent microwave dielectric properties with a high ε _r of 43, a high Q × f of 86,802 GHz and a small τ _f of -10.39 ppm/°C.

Original language	English
Pages (from-to)	4510-4513
Number of pages	4
Journal	Materials Research Bulletin
Volume	47
Issue number	12
DOIs	https://doi.org/10.1016/j.materresbull.2012.08.075
Publication status	Published - 2012 Dec

Keywords

A. Ceramics
A. Oxides
D. Dielectric properties
D. Microstructure

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1016/j.materresbull.2012.08.075

Cite this

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title = "Microstructure and microwave dielectric properties of Bi 12SiO 20 ceramics",

abstract = "Bi 12SiO 20 ceramics were well sintered at 800°C after calcination at 700°C. A liquid phase of composition Bi 2O 3 was formed during the sintering at temperatures ≥800°C and assisted the densification of the Bi 12SiO 20 ceramics. When the sintering temperature exceeded 800°C, however, the relative density, ε r, and Q × f values of the Bi 12SiO 20 ceramics decreased, probably due to the formation of a large amount of the liquid phase. The Bi 12SiO 20 ceramics sintered at 800°C for 5.0 h exhibited excellent microwave dielectric properties with a high ε r of 43, a high Q × f of 86,802 GHz and a small τ f of -10.39 ppm/°C.",

keywords = "A. Ceramics, A. Oxides, D. Dielectric properties, D. Microstructure",

author = "Jeong, {Byoung Jik} and Joung, {Mi Ri} and Kweon, {Sang Hyo} and Kim, {Jin Seong} and Sahn Nahm and Choi, {Ji Won} and Hwang, {Seong Ju}",

note = "Funding Information: This work was supported by the Industrial Strategic Technology Development Program , 10041232, {\textquoteleft}Development of synthesis method of exfoliated inorganic nanosheets with a high dielectric constant of >300 and the corresponding thin films applicable for the fabrication of high performance MLCC{\textquoteright} funded by the Ministry of Knowledge Economy (MKE, Korea) . Copyright: Copyright 2012 Elsevier B.V., All rights reserved.",

year = "2012",

month = dec,

doi = "10.1016/j.materresbull.2012.08.075",

language = "English",

volume = "47",

pages = "4510--4513",

journal = "Materials Research Bulletin",

issn = "0025-5408",

publisher = "Elsevier Limited",

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T1 - Microstructure and microwave dielectric properties of Bi 12SiO 20 ceramics

AU - Jeong, Byoung Jik

AU - Joung, Mi Ri

AU - Kweon, Sang Hyo

AU - Kim, Jin Seong

AU - Nahm, Sahn

AU - Choi, Ji Won

AU - Hwang, Seong Ju

N1 - Funding Information: This work was supported by the Industrial Strategic Technology Development Program , 10041232, ‘Development of synthesis method of exfoliated inorganic nanosheets with a high dielectric constant of >300 and the corresponding thin films applicable for the fabrication of high performance MLCC’ funded by the Ministry of Knowledge Economy (MKE, Korea) . Copyright: Copyright 2012 Elsevier B.V., All rights reserved.

PY - 2012/12

Y1 - 2012/12

N2 - Bi 12SiO 20 ceramics were well sintered at 800°C after calcination at 700°C. A liquid phase of composition Bi 2O 3 was formed during the sintering at temperatures ≥800°C and assisted the densification of the Bi 12SiO 20 ceramics. When the sintering temperature exceeded 800°C, however, the relative density, ε r, and Q × f values of the Bi 12SiO 20 ceramics decreased, probably due to the formation of a large amount of the liquid phase. The Bi 12SiO 20 ceramics sintered at 800°C for 5.0 h exhibited excellent microwave dielectric properties with a high ε r of 43, a high Q × f of 86,802 GHz and a small τ f of -10.39 ppm/°C.

AB - Bi 12SiO 20 ceramics were well sintered at 800°C after calcination at 700°C. A liquid phase of composition Bi 2O 3 was formed during the sintering at temperatures ≥800°C and assisted the densification of the Bi 12SiO 20 ceramics. When the sintering temperature exceeded 800°C, however, the relative density, ε r, and Q × f values of the Bi 12SiO 20 ceramics decreased, probably due to the formation of a large amount of the liquid phase. The Bi 12SiO 20 ceramics sintered at 800°C for 5.0 h exhibited excellent microwave dielectric properties with a high ε r of 43, a high Q × f of 86,802 GHz and a small τ f of -10.39 ppm/°C.

KW - A. Ceramics

KW - A. Oxides

KW - D. Dielectric properties

KW - D. Microstructure

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