Microstructure and microwave dielectric properties of Bi 12SiO 20 ceramics

Byoung Jik Jeong; Mi Ri Joung; Sang Hyo Kweon; Jin Seong Kim; Sahn Nahm; Ji Won Choi; Seong Ju Hwang

doi:10.1016/j.materresbull.2012.08.075

Microstructure and microwave dielectric properties of Bi ₁₂SiO ₂₀ ceramics

Byoung Jik Jeong, Mi Ri Joung, Sang Hyo Kweon, Jin Seong Kim, Sahn Nahm, Ji Won Choi, Seong Ju Hwang

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

Bi ₁₂SiO ₂₀ ceramics were well sintered at 800°C after calcination at 700°C. A liquid phase of composition Bi ₂O ₃ was formed during the sintering at temperatures ≥800°C and assisted the densification of the Bi ₁₂SiO ₂₀ ceramics. When the sintering temperature exceeded 800°C, however, the relative density, ε _r, and Q × f values of the Bi ₁₂SiO ₂₀ ceramics decreased, probably due to the formation of a large amount of the liquid phase. The Bi ₁₂SiO ₂₀ ceramics sintered at 800°C for 5.0 h exhibited excellent microwave dielectric properties with a high ε _r of 43, a high Q × f of 86,802 GHz and a small τ _f of -10.39 ppm/°C.

Original language	English
Pages (from-to)	4510-4513
Number of pages	4
Journal	Materials Research Bulletin
Volume	47
Issue number	12
DOIs	https://doi.org/10.1016/j.materresbull.2012.08.075
Publication status	Published - 2012 Dec

Bibliographical note

Funding Information:
This work was supported by the Industrial Strategic Technology Development Program , 10041232, ‘Development of synthesis method of exfoliated inorganic nanosheets with a high dielectric constant of >300 and the corresponding thin films applicable for the fabrication of high performance MLCC’ funded by the Ministry of Knowledge Economy (MKE, Korea) .

Copyright:
Copyright 2012 Elsevier B.V., All rights reserved.

Keywords

A. Ceramics
A. Oxides
D. Dielectric properties
D. Microstructure

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1016/j.materresbull.2012.08.075

Cite this

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title = "Microstructure and microwave dielectric properties of Bi 12SiO 20 ceramics",

abstract = "Bi 12SiO 20 ceramics were well sintered at 800°C after calcination at 700°C. A liquid phase of composition Bi 2O 3 was formed during the sintering at temperatures ≥800°C and assisted the densification of the Bi 12SiO 20 ceramics. When the sintering temperature exceeded 800°C, however, the relative density, ε r, and Q × f values of the Bi 12SiO 20 ceramics decreased, probably due to the formation of a large amount of the liquid phase. The Bi 12SiO 20 ceramics sintered at 800°C for 5.0 h exhibited excellent microwave dielectric properties with a high ε r of 43, a high Q × f of 86,802 GHz and a small τ f of -10.39 ppm/°C.",

keywords = "A. Ceramics, A. Oxides, D. Dielectric properties, D. Microstructure",

author = "Jeong, {Byoung Jik} and Joung, {Mi Ri} and Kweon, {Sang Hyo} and Kim, {Jin Seong} and Sahn Nahm and Choi, {Ji Won} and Hwang, {Seong Ju}",

note = "Funding Information: This work was supported by the Industrial Strategic Technology Development Program , 10041232, {\textquoteleft}Development of synthesis method of exfoliated inorganic nanosheets with a high dielectric constant of >300 and the corresponding thin films applicable for the fabrication of high performance MLCC{\textquoteright} funded by the Ministry of Knowledge Economy (MKE, Korea) . Copyright: Copyright 2012 Elsevier B.V., All rights reserved.",

year = "2012",

month = dec,

doi = "10.1016/j.materresbull.2012.08.075",

language = "English",

volume = "47",

pages = "4510--4513",

journal = "Materials Research Bulletin",

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T1 - Microstructure and microwave dielectric properties of Bi 12SiO 20 ceramics

AU - Jeong, Byoung Jik

AU - Joung, Mi Ri

AU - Kweon, Sang Hyo

AU - Kim, Jin Seong

AU - Nahm, Sahn

AU - Choi, Ji Won

AU - Hwang, Seong Ju

N1 - Funding Information: This work was supported by the Industrial Strategic Technology Development Program , 10041232, ‘Development of synthesis method of exfoliated inorganic nanosheets with a high dielectric constant of >300 and the corresponding thin films applicable for the fabrication of high performance MLCC’ funded by the Ministry of Knowledge Economy (MKE, Korea) . Copyright: Copyright 2012 Elsevier B.V., All rights reserved.

PY - 2012/12

Y1 - 2012/12

N2 - Bi 12SiO 20 ceramics were well sintered at 800°C after calcination at 700°C. A liquid phase of composition Bi 2O 3 was formed during the sintering at temperatures ≥800°C and assisted the densification of the Bi 12SiO 20 ceramics. When the sintering temperature exceeded 800°C, however, the relative density, ε r, and Q × f values of the Bi 12SiO 20 ceramics decreased, probably due to the formation of a large amount of the liquid phase. The Bi 12SiO 20 ceramics sintered at 800°C for 5.0 h exhibited excellent microwave dielectric properties with a high ε r of 43, a high Q × f of 86,802 GHz and a small τ f of -10.39 ppm/°C.

AB - Bi 12SiO 20 ceramics were well sintered at 800°C after calcination at 700°C. A liquid phase of composition Bi 2O 3 was formed during the sintering at temperatures ≥800°C and assisted the densification of the Bi 12SiO 20 ceramics. When the sintering temperature exceeded 800°C, however, the relative density, ε r, and Q × f values of the Bi 12SiO 20 ceramics decreased, probably due to the formation of a large amount of the liquid phase. The Bi 12SiO 20 ceramics sintered at 800°C for 5.0 h exhibited excellent microwave dielectric properties with a high ε r of 43, a high Q × f of 86,802 GHz and a small τ f of -10.39 ppm/°C.

KW - A. Ceramics

KW - A. Oxides

KW - D. Dielectric properties

KW - D. Microstructure

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