Microstructure and resistive switching behavior of amorphous Pr 0.7Ca 0.3MnO3 films grown under various oxygen pressures

Kyu Bum Choi; Beom Seok Lee; Mi Ri Joung; Jong Hee Yoo; Won Kim; Sahn Nahm

doi:10.1149/2.003307ssl

Microstructure and resistive switching behavior of amorphous Pr _0.7Ca _0.3MnO₃ films grown under various oxygen pressures

Kyu Bum Choi
, Beom Seok Lee
, Mi Ri Joung
, Jong Hee Yoo
, Won Kim
, Sahn Nahm

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Amorphous Pr _0.7Ca _0.3MnO₃ (APCMO) films grown on a Pt electrode under an oxygen pressure(OP) of 5 mTorr showed a dense microstructure with a smooth surface but bipolar switching behavior was not observed in this film. Porosity and surface roughness increased with increasing OP and a typical bipolar switching behavior was observed in the APCMO films grown under 100 and 200 mTorr OP. The resistance of these APCMO films decreased with increasing device area in both low- and high-resistance states. Space-charge-limited current and Schottky emission were used to explain the leakage current mechanism of the Ti/APCMO/Pt device in low- and high-resistance states, respectively.

Original language	English
Pages (from-to)	N21-N25
Journal	ECS Solid State Letters
Volume	2
Issue number	7
DOIs	https://doi.org/10.1149/2.003307ssl
Publication status	Published - 2013

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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title = "Microstructure and resistive switching behavior of amorphous Pr 0.7Ca 0.3MnO3 films grown under various oxygen pressures",

abstract = "Amorphous Pr 0.7Ca 0.3MnO3 (APCMO) films grown on a Pt electrode under an oxygen pressure(OP) of 5 mTorr showed a dense microstructure with a smooth surface but bipolar switching behavior was not observed in this film. Porosity and surface roughness increased with increasing OP and a typical bipolar switching behavior was observed in the APCMO films grown under 100 and 200 mTorr OP. The resistance of these APCMO films decreased with increasing device area in both low- and high-resistance states. Space-charge-limited current and Schottky emission were used to explain the leakage current mechanism of the Ti/APCMO/Pt device in low- and high-resistance states, respectively.",

author = "Choi, \{Kyu Bum\} and Lee, \{Beom Seok\} and Joung, \{Mi Ri\} and Yoo, \{Jong Hee\} and Won Kim and Sahn Nahm",

year = "2013",

doi = "10.1149/2.003307ssl",

language = "English",

volume = "2",

pages = "N21--N25",

journal = "ECS Solid State Letters",

issn = "2162-8742",

publisher = "The Electrochemical Society",

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TY - JOUR

T1 - Microstructure and resistive switching behavior of amorphous Pr 0.7Ca 0.3MnO3 films grown under various oxygen pressures

AU - Choi, Kyu Bum

AU - Lee, Beom Seok

AU - Joung, Mi Ri

AU - Yoo, Jong Hee

AU - Kim, Won

AU - Nahm, Sahn

PY - 2013

Y1 - 2013

N2 - Amorphous Pr 0.7Ca 0.3MnO3 (APCMO) films grown on a Pt electrode under an oxygen pressure(OP) of 5 mTorr showed a dense microstructure with a smooth surface but bipolar switching behavior was not observed in this film. Porosity and surface roughness increased with increasing OP and a typical bipolar switching behavior was observed in the APCMO films grown under 100 and 200 mTorr OP. The resistance of these APCMO films decreased with increasing device area in both low- and high-resistance states. Space-charge-limited current and Schottky emission were used to explain the leakage current mechanism of the Ti/APCMO/Pt device in low- and high-resistance states, respectively.

AB - Amorphous Pr 0.7Ca 0.3MnO3 (APCMO) films grown on a Pt electrode under an oxygen pressure(OP) of 5 mTorr showed a dense microstructure with a smooth surface but bipolar switching behavior was not observed in this film. Porosity and surface roughness increased with increasing OP and a typical bipolar switching behavior was observed in the APCMO films grown under 100 and 200 mTorr OP. The resistance of these APCMO films decreased with increasing device area in both low- and high-resistance states. Space-charge-limited current and Schottky emission were used to explain the leakage current mechanism of the Ti/APCMO/Pt device in low- and high-resistance states, respectively.

UR - https://www.scopus.com/pages/publications/84880409120

U2 - 10.1149/2.003307ssl

DO - 10.1149/2.003307ssl

M3 - Article

AN - SCOPUS:84880409120

SN - 2162-8742

VL - 2

SP - N21-N25

JO - ECS Solid State Letters

JF - ECS Solid State Letters

IS - 7

ER -

Microstructure and resistive switching behavior of amorphous Pr _0.7Ca _0.3MnO₃ films grown under various oxygen pressures

Abstract

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