Abstract
ZnO thin films were deposited by using atomic layer deposition with a fixed purging time of the DEZinc and the H2O sources of 8 sec and an injection time of 1 sec per source. The ZnO films were formed in the temperature range from 30 °C to 300 °C. The microstructure was altered by varying the temperature, and the shapes and the sizes of the grains were altered by changing the preferred orientation. The surface morphologies and the shapes of the grains were correlated with the preferred orientation, which changed with the growth temperature.
Original language | English |
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Pages (from-to) | 3033-3037 |
Number of pages | 5 |
Journal | Journal of the Korean Physical Society |
Volume | 53 |
Issue number | 5 PART 2 |
DOIs | |
Publication status | Published - 2008 Nov |
Keywords
- Atomic layer deposition (ALD)
- Microstructure
- Zinc oxide
ASJC Scopus subject areas
- General Physics and Astronomy