Microstructures and microwave dielectric properties of Bi2O 3-deficient Bi12 SiO20 ceramics

Byoung Jik Jeong; Mi Ri Joung; Sang Hyo Kweon; Jin Seong Kim; Sahn Nahm; Ji Won Choi; Seong Ju Hwang

doi:10.1111/jace.12323

Microstructures and microwave dielectric properties of Bi₂O ₃-deficient Bi₁₂ SiO₂₀ ceramics

Byoung Jik Jeong, Mi Ri Joung, Sang Hyo Kweon, Jin Seong Kim, Sahn Nahm, Ji Won Choi, Seong Ju Hwang

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

The Microstructure and microwave dielectric properties of Bi ₂O₃-deficient Bi₁₂SiO₂₀ ceramics were investigated. A small amount of unreacted Bi₂O₃ phase melted during sintering at 825°C and assisted with densification and grain growth in all samples. The melted Bi₂O₃ reacted with remnant SiO₂ during cooling to form a Bi₄Si ₃O₁₂ secondary phase. The nominal composition of Bi _11.8SiO_19.7 ceramics sintered at 825°C for 4 h had a high relative density of 97% of the theoretical density, and good microwave dielectric properties: ε_r = 39, Q × f = 74 000 GHz, and τ_f = -14.1 ppm/°C. Moreover, this ceramic did not react with Ag at 825°C.

Original language	English
Pages (from-to)	2225-2229
Number of pages	5
Journal	Journal of the American Ceramic Society
Volume	96
Issue number	7
DOIs	https://doi.org/10.1111/jace.12323
Publication status	Published - 2013 Jul

ASJC Scopus subject areas

Ceramics and Composites
Materials Chemistry

Access to Document

10.1111/jace.12323

Cite this

@article{1d6e144ad3444b83befb3379e615b00b,

title = "Microstructures and microwave dielectric properties of Bi2O 3-deficient Bi12 SiO20 ceramics",

abstract = "The Microstructure and microwave dielectric properties of Bi 2O3-deficient Bi12SiO20 ceramics were investigated. A small amount of unreacted Bi2O3 phase melted during sintering at 825°C and assisted with densification and grain growth in all samples. The melted Bi2O3 reacted with remnant SiO2 during cooling to form a Bi4Si 3O12 secondary phase. The nominal composition of Bi 11.8SiO19.7 ceramics sintered at 825°C for 4 h had a high relative density of 97% of the theoretical density, and good microwave dielectric properties: εr = 39, Q × f = 74 000 GHz, and τf = -14.1 ppm/°C. Moreover, this ceramic did not react with Ag at 825°C.",

author = "Jeong, {Byoung Jik} and Joung, {Mi Ri} and Kweon, {Sang Hyo} and Kim, {Jin Seong} and Sahn Nahm and Choi, {Ji Won} and Hwang, {Seong Ju}",

year = "2013",

month = jul,

doi = "10.1111/jace.12323",

language = "English",

volume = "96",

pages = "2225--2229",

journal = "Journal of the American Ceramic Society",

issn = "0002-7820",

publisher = "Wiley-Blackwell",

number = "7",

}

TY - JOUR

T1 - Microstructures and microwave dielectric properties of Bi2O 3-deficient Bi12 SiO20 ceramics

AU - Jeong, Byoung Jik

AU - Joung, Mi Ri

AU - Kweon, Sang Hyo

AU - Kim, Jin Seong

AU - Nahm, Sahn

AU - Choi, Ji Won

AU - Hwang, Seong Ju

PY - 2013/7

Y1 - 2013/7

N2 - The Microstructure and microwave dielectric properties of Bi 2O3-deficient Bi12SiO20 ceramics were investigated. A small amount of unreacted Bi2O3 phase melted during sintering at 825°C and assisted with densification and grain growth in all samples. The melted Bi2O3 reacted with remnant SiO2 during cooling to form a Bi4Si 3O12 secondary phase. The nominal composition of Bi 11.8SiO19.7 ceramics sintered at 825°C for 4 h had a high relative density of 97% of the theoretical density, and good microwave dielectric properties: εr = 39, Q × f = 74 000 GHz, and τf = -14.1 ppm/°C. Moreover, this ceramic did not react with Ag at 825°C.

AB - The Microstructure and microwave dielectric properties of Bi 2O3-deficient Bi12SiO20 ceramics were investigated. A small amount of unreacted Bi2O3 phase melted during sintering at 825°C and assisted with densification and grain growth in all samples. The melted Bi2O3 reacted with remnant SiO2 during cooling to form a Bi4Si 3O12 secondary phase. The nominal composition of Bi 11.8SiO19.7 ceramics sintered at 825°C for 4 h had a high relative density of 97% of the theoretical density, and good microwave dielectric properties: εr = 39, Q × f = 74 000 GHz, and τf = -14.1 ppm/°C. Moreover, this ceramic did not react with Ag at 825°C.

UR - http://www.scopus.com/inward/record.url?scp=84880262462&partnerID=8YFLogxK

U2 - 10.1111/jace.12323

DO - 10.1111/jace.12323

M3 - Article

AN - SCOPUS:84880262462

SN - 0002-7820

VL - 96

SP - 2225

EP - 2229

JO - Journal of the American Ceramic Society

JF - Journal of the American Ceramic Society

IS - 7

ER -

Microstructures and microwave dielectric properties of Bi₂O ₃-deficient Bi₁₂ SiO₂₀ ceramics

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this