Abstract
We report the fabrication and characteristics of vertical microtube light-emitting diode (LED) arrays with a metal core inside the devices. To make the LEDs, gallium nitride (GaN)/indium gallium nitride (InxGa1-xN)/zinc oxide (ZnO) coaxial microtube LED arrays were grown on an n-GaN/c-aluminum oxide (Al2O3) substrate. The microtube LED arrays were then lifted-off the substrate by wet chemical etching of the sacrificial ZnO microtubes and the silicon dioxide (SiO2) layer. The chemically lifted-off LED layer was then transferred upside-down on other supporting substrates. To create the metal cores, titanium/gold and indium tin oxide were deposited on the inner shells of the microtubes, forming n-type electrodes inside the metal-cored LEDs. The characteristics of the resulting devices were determined by measuring electroluminescence and current-voltage characteristic curves. To gain insights into the current-spreading characteristics of the devices and understand how to make them more efficient, we modeled them computationally.
Original language | English |
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Pages (from-to) | 3114-3120 |
Number of pages | 7 |
Journal | ACS nano |
Volume | 10 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2016 Mar 22 |
Bibliographical note
Publisher Copyright:© 2016 American Chemical Society.
Keywords
- current spreading
- gallium nitride
- light-emitting diodes
- metal core
- nanoarchitecture
ASJC Scopus subject areas
- General Materials Science
- General Engineering
- General Physics and Astronomy