Microtube Light-Emitting Diode Arrays with Metal Cores

Youngbin Tchoe; Chul Ho Lee; Jun Beom Park; Hyeonjun Baek; Kunook Chung; Janghyun Jo; Miyoung Kim; Gyu Chul Yi

doi:10.1021/acsnano.5b07905

Microtube Light-Emitting Diode Arrays with Metal Cores

Youngbin Tchoe, Chul Ho Lee, Jun Beom Park, Hyeonjun Baek, Kunook Chung, Janghyun Jo, Miyoung Kim, Gyu Chul Yi

KU-KIST Graduate School of Converging Science and Technology

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

We report the fabrication and characteristics of vertical microtube light-emitting diode (LED) arrays with a metal core inside the devices. To make the LEDs, gallium nitride (GaN)/indium gallium nitride (In_xGa_1-xN)/zinc oxide (ZnO) coaxial microtube LED arrays were grown on an n-GaN/c-aluminum oxide (Al₂O₃) substrate. The microtube LED arrays were then lifted-off the substrate by wet chemical etching of the sacrificial ZnO microtubes and the silicon dioxide (SiO₂) layer. The chemically lifted-off LED layer was then transferred upside-down on other supporting substrates. To create the metal cores, titanium/gold and indium tin oxide were deposited on the inner shells of the microtubes, forming n-type electrodes inside the metal-cored LEDs. The characteristics of the resulting devices were determined by measuring electroluminescence and current-voltage characteristic curves. To gain insights into the current-spreading characteristics of the devices and understand how to make them more efficient, we modeled them computationally.

Original language	English
Pages (from-to)	3114-3120
Number of pages	7
Journal	ACS nano
Volume	10
Issue number	3
DOIs	https://doi.org/10.1021/acsnano.5b07905
Publication status	Published - 2016 Mar 22

Keywords

current spreading
gallium nitride
light-emitting diodes
metal core
nanoarchitecture

ASJC Scopus subject areas

Materials Science(all)
Engineering(all)
Physics and Astronomy(all)

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10.1021/acsnano.5b07905

Cite this

@article{7eac45cc654a4e8ebd3c982a0a32e008,

title = "Microtube Light-Emitting Diode Arrays with Metal Cores",

abstract = "We report the fabrication and characteristics of vertical microtube light-emitting diode (LED) arrays with a metal core inside the devices. To make the LEDs, gallium nitride (GaN)/indium gallium nitride (InxGa1-xN)/zinc oxide (ZnO) coaxial microtube LED arrays were grown on an n-GaN/c-aluminum oxide (Al2O3) substrate. The microtube LED arrays were then lifted-off the substrate by wet chemical etching of the sacrificial ZnO microtubes and the silicon dioxide (SiO2) layer. The chemically lifted-off LED layer was then transferred upside-down on other supporting substrates. To create the metal cores, titanium/gold and indium tin oxide were deposited on the inner shells of the microtubes, forming n-type electrodes inside the metal-cored LEDs. The characteristics of the resulting devices were determined by measuring electroluminescence and current-voltage characteristic curves. To gain insights into the current-spreading characteristics of the devices and understand how to make them more efficient, we modeled them computationally.",

keywords = "current spreading, gallium nitride, light-emitting diodes, metal core, nanoarchitecture",

author = "Youngbin Tchoe and Lee, {Chul Ho} and Park, {Jun Beom} and Hyeonjun Baek and Kunook Chung and Janghyun Jo and Miyoung Kim and Yi, {Gyu Chul}",

note = "Funding Information: This work was supported by Seoul National University (SNU) and the Yonsei Research Cooperation Program, which was run by SNU in 2015. This work was also supported by the National Research Foundation of Korea (NRF) grant funded by the Ministry of Science, ICT & Future Planning (MSIP) (NRF-2015K1A1A2033332 and NRF-2015R1A5A1037627). C.-H.L. was supported by Basic Science Research Program (NRF-2014R1A1A2055112) through the NRF funded by the Korean Government Ministry of Education. Y.T. is grateful for the generous support of the TJ Park Science Fellowship program from the POSCO TJ Park Foundation. Publisher Copyright: {\textcopyright} 2016 American Chemical Society.",

year = "2016",

month = mar,

day = "22",

doi = "10.1021/acsnano.5b07905",

language = "English",

volume = "10",

pages = "3114--3120",

journal = "ACS nano",

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T1 - Microtube Light-Emitting Diode Arrays with Metal Cores

AU - Tchoe, Youngbin

AU - Lee, Chul Ho

AU - Park, Jun Beom

AU - Baek, Hyeonjun

AU - Chung, Kunook

AU - Jo, Janghyun

AU - Kim, Miyoung

AU - Yi, Gyu Chul

N1 - Funding Information: This work was supported by Seoul National University (SNU) and the Yonsei Research Cooperation Program, which was run by SNU in 2015. This work was also supported by the National Research Foundation of Korea (NRF) grant funded by the Ministry of Science, ICT & Future Planning (MSIP) (NRF-2015K1A1A2033332 and NRF-2015R1A5A1037627). C.-H.L. was supported by Basic Science Research Program (NRF-2014R1A1A2055112) through the NRF funded by the Korean Government Ministry of Education. Y.T. is grateful for the generous support of the TJ Park Science Fellowship program from the POSCO TJ Park Foundation. Publisher Copyright: © 2016 American Chemical Society.

PY - 2016/3/22

Y1 - 2016/3/22

N2 - We report the fabrication and characteristics of vertical microtube light-emitting diode (LED) arrays with a metal core inside the devices. To make the LEDs, gallium nitride (GaN)/indium gallium nitride (InxGa1-xN)/zinc oxide (ZnO) coaxial microtube LED arrays were grown on an n-GaN/c-aluminum oxide (Al2O3) substrate. The microtube LED arrays were then lifted-off the substrate by wet chemical etching of the sacrificial ZnO microtubes and the silicon dioxide (SiO2) layer. The chemically lifted-off LED layer was then transferred upside-down on other supporting substrates. To create the metal cores, titanium/gold and indium tin oxide were deposited on the inner shells of the microtubes, forming n-type electrodes inside the metal-cored LEDs. The characteristics of the resulting devices were determined by measuring electroluminescence and current-voltage characteristic curves. To gain insights into the current-spreading characteristics of the devices and understand how to make them more efficient, we modeled them computationally.

AB - We report the fabrication and characteristics of vertical microtube light-emitting diode (LED) arrays with a metal core inside the devices. To make the LEDs, gallium nitride (GaN)/indium gallium nitride (InxGa1-xN)/zinc oxide (ZnO) coaxial microtube LED arrays were grown on an n-GaN/c-aluminum oxide (Al2O3) substrate. The microtube LED arrays were then lifted-off the substrate by wet chemical etching of the sacrificial ZnO microtubes and the silicon dioxide (SiO2) layer. The chemically lifted-off LED layer was then transferred upside-down on other supporting substrates. To create the metal cores, titanium/gold and indium tin oxide were deposited on the inner shells of the microtubes, forming n-type electrodes inside the metal-cored LEDs. The characteristics of the resulting devices were determined by measuring electroluminescence and current-voltage characteristic curves. To gain insights into the current-spreading characteristics of the devices and understand how to make them more efficient, we modeled them computationally.

KW - current spreading

KW - gallium nitride

KW - light-emitting diodes

KW - metal core

KW - nanoarchitecture

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DO - 10.1021/acsnano.5b07905

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SN - 1936-0851

VL - 10

SP - 3114

EP - 3120

JO - ACS nano

JF - ACS nano

IS - 3

ER -

Microtube Light-Emitting Diode Arrays with Metal Cores

Abstract

Keywords

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