Microtuning of the Wide-Bandgap Perovskite Lattice Plane for Efficient and Robust High-Voltage Planar Solar Cells Exceeding 1.5 V

Yohan Ko; Youbin Kim; Chanyong Lee; Yechan Kim; Byoung Koun Min; Hui jeong Gwon; Yong Ju Yun; Yongseok Jun

doi:10.1021/acsaem.9b01863

Microtuning of the Wide-Bandgap Perovskite Lattice Plane for Efficient and Robust High-Voltage Planar Solar Cells Exceeding 1.5 V

Yohan Ko, Youbin Kim, Chanyong Lee, Yechan Kim, Byoung Koun Min, Hui jeong Gwon, Yong Ju Yun, Yongseok Jun

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

Iodide-free tribromide-based perovskites, with their wide bandgap of over 2.0 eV, are highly regarded as potential candidates for a photoelectrochemical water splitting system and the topmost cell in tandem solar cell. Herein, we report on the importance of microtuning of the crystal lattice by cesium incorporation into the A-site on low temperature processed formamidinium lead tribromide (CH(NH₂)₂PbBr₃ = FAPbBr₃) perovskite films. The partial incorporation of cesium bromide (CsBr) into the FAPbBr₃ film tunes crystal-lattice interactions, resulting in a high-purity cubic crystal system with preferred orientation. An entirely low temperature processed planar photovoltaic device assembled with FAPbBr₃ containing 8% Cs (Cs_0.08FA_0.92PbBr₃) exhibited an optimum PCE (power conversion efficiency) of 8.56% with a V_oc (open-circuit voltage) of 1.516 V, which is higher than the PCE of 7.07% and V_oc of 1.428 V of the FAPbBr₃ device. Photoluminescence-intensity and temporal-imaging measurements were conducted by laser scanning confocal time-resolved microscopy (LCTM), which revealed that CsBr incorporation into a FAPbBr₃ film significantly suppresses the nonradiative recombination pathways and homogenizes the spatial distribution of photoluminescence. It was visualized that the incorporation of CsBr in FAPbBr₃ directly affects the bulk defect and photoluminescence properties, which provides evidence that Cs ions surely alleviate the segregation and aggregation of ions in the perovskite film. Notably, the Cs_0.08FA_0.92PbBr₃ film, with a carrier lifetime of about 270 ns, exhibited a 1.37-fold longer radiative recombination time than that (210 ns) observed for the FAPbBr₃ film. Furthermore, aging experiments without encapsulation under ambient (in air for 2000 h) and severe (65 °C and 65% RH for 500 h) conditions revealed that the Cs_0.08FA_0.92PbBr₃ devices were more robust than the FAPbBr₃ devices.

Original language	English
Pages (from-to)	2331-2341
Number of pages	11
Journal	ACS Applied Energy Materials
Volume	3
Issue number	3
DOIs	https://doi.org/10.1021/acsaem.9b01863
Publication status	Published - 2020 Mar 23

Bibliographical note

Publisher Copyright:
Copyright © 2019 American Chemical Society.

Keywords

CsBr
FAPbBr
high photovoltage
low-temperature process
wide bandgap

ASJC Scopus subject areas

Chemical Engineering (miscellaneous)
Energy Engineering and Power Technology
Materials Chemistry
Electrical and Electronic Engineering
Electrochemistry

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1021/acsaem.9b01863

Cite this

@article{11053ab8ec7a4d73a35feda2f450751f,

title = "Microtuning of the Wide-Bandgap Perovskite Lattice Plane for Efficient and Robust High-Voltage Planar Solar Cells Exceeding 1.5 V",

abstract = "Iodide-free tribromide-based perovskites, with their wide bandgap of over 2.0 eV, are highly regarded as potential candidates for a photoelectrochemical water splitting system and the topmost cell in tandem solar cell. Herein, we report on the importance of microtuning of the crystal lattice by cesium incorporation into the A-site on low temperature processed formamidinium lead tribromide (CH(NH2)2PbBr3 = FAPbBr3) perovskite films. The partial incorporation of cesium bromide (CsBr) into the FAPbBr3 film tunes crystal-lattice interactions, resulting in a high-purity cubic crystal system with preferred orientation. An entirely low temperature processed planar photovoltaic device assembled with FAPbBr3 containing 8% Cs (Cs0.08FA0.92PbBr3) exhibited an optimum PCE (power conversion efficiency) of 8.56% with a Voc (open-circuit voltage) of 1.516 V, which is higher than the PCE of 7.07% and Voc of 1.428 V of the FAPbBr3 device. Photoluminescence-intensity and temporal-imaging measurements were conducted by laser scanning confocal time-resolved microscopy (LCTM), which revealed that CsBr incorporation into a FAPbBr3 film significantly suppresses the nonradiative recombination pathways and homogenizes the spatial distribution of photoluminescence. It was visualized that the incorporation of CsBr in FAPbBr3 directly affects the bulk defect and photoluminescence properties, which provides evidence that Cs ions surely alleviate the segregation and aggregation of ions in the perovskite film. Notably, the Cs0.08FA0.92PbBr3 film, with a carrier lifetime of about 270 ns, exhibited a 1.37-fold longer radiative recombination time than that (210 ns) observed for the FAPbBr3 film. Furthermore, aging experiments without encapsulation under ambient (in air for 2000 h) and severe (65 °C and 65% RH for 500 h) conditions revealed that the Cs0.08FA0.92PbBr3 devices were more robust than the FAPbBr3 devices.",

keywords = "CsBr, FAPbBr, high photovoltage, low-temperature process, wide bandgap",

author = "Yohan Ko and Youbin Kim and Chanyong Lee and Yechan Kim and Min, {Byoung Koun} and Gwon, {Hui jeong} and Yun, {Yong Ju} and Yongseok Jun",

note = "Publisher Copyright: Copyright {\textcopyright} 2019 American Chemical Society.",

year = "2020",

month = mar,

day = "23",

doi = "10.1021/acsaem.9b01863",

language = "English",

volume = "3",

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T1 - Microtuning of the Wide-Bandgap Perovskite Lattice Plane for Efficient and Robust High-Voltage Planar Solar Cells Exceeding 1.5 V

AU - Ko, Yohan

AU - Kim, Youbin

AU - Lee, Chanyong

AU - Kim, Yechan

AU - Min, Byoung Koun

AU - Gwon, Hui jeong

AU - Yun, Yong Ju

AU - Jun, Yongseok

PY - 2020/3/23

Y1 - 2020/3/23

N2 - Iodide-free tribromide-based perovskites, with their wide bandgap of over 2.0 eV, are highly regarded as potential candidates for a photoelectrochemical water splitting system and the topmost cell in tandem solar cell. Herein, we report on the importance of microtuning of the crystal lattice by cesium incorporation into the A-site on low temperature processed formamidinium lead tribromide (CH(NH2)2PbBr3 = FAPbBr3) perovskite films. The partial incorporation of cesium bromide (CsBr) into the FAPbBr3 film tunes crystal-lattice interactions, resulting in a high-purity cubic crystal system with preferred orientation. An entirely low temperature processed planar photovoltaic device assembled with FAPbBr3 containing 8% Cs (Cs0.08FA0.92PbBr3) exhibited an optimum PCE (power conversion efficiency) of 8.56% with a Voc (open-circuit voltage) of 1.516 V, which is higher than the PCE of 7.07% and Voc of 1.428 V of the FAPbBr3 device. Photoluminescence-intensity and temporal-imaging measurements were conducted by laser scanning confocal time-resolved microscopy (LCTM), which revealed that CsBr incorporation into a FAPbBr3 film significantly suppresses the nonradiative recombination pathways and homogenizes the spatial distribution of photoluminescence. It was visualized that the incorporation of CsBr in FAPbBr3 directly affects the bulk defect and photoluminescence properties, which provides evidence that Cs ions surely alleviate the segregation and aggregation of ions in the perovskite film. Notably, the Cs0.08FA0.92PbBr3 film, with a carrier lifetime of about 270 ns, exhibited a 1.37-fold longer radiative recombination time than that (210 ns) observed for the FAPbBr3 film. Furthermore, aging experiments without encapsulation under ambient (in air for 2000 h) and severe (65 °C and 65% RH for 500 h) conditions revealed that the Cs0.08FA0.92PbBr3 devices were more robust than the FAPbBr3 devices.

AB - Iodide-free tribromide-based perovskites, with their wide bandgap of over 2.0 eV, are highly regarded as potential candidates for a photoelectrochemical water splitting system and the topmost cell in tandem solar cell. Herein, we report on the importance of microtuning of the crystal lattice by cesium incorporation into the A-site on low temperature processed formamidinium lead tribromide (CH(NH2)2PbBr3 = FAPbBr3) perovskite films. The partial incorporation of cesium bromide (CsBr) into the FAPbBr3 film tunes crystal-lattice interactions, resulting in a high-purity cubic crystal system with preferred orientation. An entirely low temperature processed planar photovoltaic device assembled with FAPbBr3 containing 8% Cs (Cs0.08FA0.92PbBr3) exhibited an optimum PCE (power conversion efficiency) of 8.56% with a Voc (open-circuit voltage) of 1.516 V, which is higher than the PCE of 7.07% and Voc of 1.428 V of the FAPbBr3 device. Photoluminescence-intensity and temporal-imaging measurements were conducted by laser scanning confocal time-resolved microscopy (LCTM), which revealed that CsBr incorporation into a FAPbBr3 film significantly suppresses the nonradiative recombination pathways and homogenizes the spatial distribution of photoluminescence. It was visualized that the incorporation of CsBr in FAPbBr3 directly affects the bulk defect and photoluminescence properties, which provides evidence that Cs ions surely alleviate the segregation and aggregation of ions in the perovskite film. Notably, the Cs0.08FA0.92PbBr3 film, with a carrier lifetime of about 270 ns, exhibited a 1.37-fold longer radiative recombination time than that (210 ns) observed for the FAPbBr3 film. Furthermore, aging experiments without encapsulation under ambient (in air for 2000 h) and severe (65 °C and 65% RH for 500 h) conditions revealed that the Cs0.08FA0.92PbBr3 devices were more robust than the FAPbBr3 devices.

KW - CsBr

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KW - high photovoltage

KW - low-temperature process

KW - wide bandgap

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Microtuning of the Wide-Bandgap Perovskite Lattice Plane for Efficient and Robust High-Voltage Planar Solar Cells Exceeding 1.5 V

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

UN SDGs

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