Microwave characterization of a field effect transistor with dielectrophoretically-aligned single silicon nanowire

Myung Gil Kang; Jae Hyun Ahn; Jongwoon Lee; Dong Hoon Hwang; Hee Tae Kim; Jae Seong Rieh; Dongmok Whang; Maeng Ho Son; Doyeol Ahn; Yun Seop Yu; Sung Woo Hwang

doi:10.1143/JJAP.49.06GG12

Microwave characterization of a field effect transistor with dielectrophoretically-aligned single silicon nanowire

Myung Gil Kang, Jae Hyun Ahn, Jongwoon Lee, Dong Hoon Hwang, Hee Tae Kim, Jae Seong Rieh, Dongmok Whang, Maeng Ho Son, Doyeol Ahn, Yun Seop Yu, Sung Woo Hwang

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8 Citations (Scopus)

Abstract

Microwave (MW) characteristics of a field effect transistor (FET) incorporating a single silicon nanowire (SiNW) were obtained from S-parameter measurements in the frequency range of 0.05 to 20 GHz. The single SiNW was aligned, using the alternating current (ac) dielectrophoresis alignment method, between the drain and source electrode forming a coplanar waveguide (CPW) structure. Analysis of the FET was performed using equivalent circuit modeling by advanced device system (ADS) simulation. By fitting the measured data with the simulation results, the parameters of the single SiNW FET were obtained and the cutoff frequency was derived.

Original language	English
Pages (from-to)	06GG121-06GG124
Journal	Japanese journal of applied physics
Volume	49
Issue number	6 PART 2
DOIs	https://doi.org/10.1143/JJAP.49.06GG12
Publication status	Published - 2010 Jun

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

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title = "Microwave characterization of a field effect transistor with dielectrophoretically-aligned single silicon nanowire",

abstract = "Microwave (MW) characteristics of a field effect transistor (FET) incorporating a single silicon nanowire (SiNW) were obtained from S-parameter measurements in the frequency range of 0.05 to 20 GHz. The single SiNW was aligned, using the alternating current (ac) dielectrophoresis alignment method, between the drain and source electrode forming a coplanar waveguide (CPW) structure. Analysis of the FET was performed using equivalent circuit modeling by advanced device system (ADS) simulation. By fitting the measured data with the simulation results, the parameters of the single SiNW FET were obtained and the cutoff frequency was derived.",

author = "Kang, {Myung Gil} and Ahn, {Jae Hyun} and Jongwoon Lee and Hwang, {Dong Hoon} and Kim, {Hee Tae} and Rieh, {Jae Seong} and Dongmok Whang and Son, {Maeng Ho} and Doyeol Ahn and Yu, {Yun Seop} and Hwang, {Sung Woo}",

year = "2010",

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doi = "10.1143/JJAP.49.06GG12",

language = "English",

volume = "49",

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TY - JOUR

T1 - Microwave characterization of a field effect transistor with dielectrophoretically-aligned single silicon nanowire

AU - Kang, Myung Gil

AU - Ahn, Jae Hyun

AU - Lee, Jongwoon

AU - Hwang, Dong Hoon

AU - Kim, Hee Tae

AU - Rieh, Jae Seong

AU - Whang, Dongmok

AU - Son, Maeng Ho

AU - Ahn, Doyeol

AU - Yu, Yun Seop

AU - Hwang, Sung Woo

PY - 2010/6

Y1 - 2010/6

N2 - Microwave (MW) characteristics of a field effect transistor (FET) incorporating a single silicon nanowire (SiNW) were obtained from S-parameter measurements in the frequency range of 0.05 to 20 GHz. The single SiNW was aligned, using the alternating current (ac) dielectrophoresis alignment method, between the drain and source electrode forming a coplanar waveguide (CPW) structure. Analysis of the FET was performed using equivalent circuit modeling by advanced device system (ADS) simulation. By fitting the measured data with the simulation results, the parameters of the single SiNW FET were obtained and the cutoff frequency was derived.

AB - Microwave (MW) characteristics of a field effect transistor (FET) incorporating a single silicon nanowire (SiNW) were obtained from S-parameter measurements in the frequency range of 0.05 to 20 GHz. The single SiNW was aligned, using the alternating current (ac) dielectrophoresis alignment method, between the drain and source electrode forming a coplanar waveguide (CPW) structure. Analysis of the FET was performed using equivalent circuit modeling by advanced device system (ADS) simulation. By fitting the measured data with the simulation results, the parameters of the single SiNW FET were obtained and the cutoff frequency was derived.

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M3 - Article

AN - SCOPUS:77955341185

SN - 0021-4922

VL - 49

SP - 06GG121-06GG124

JO - Japanese journal of applied physics

JF - Japanese journal of applied physics

IS - 6 PART 2

ER -

Microwave characterization of a field effect transistor with dielectrophoretically-aligned single silicon nanowire

Abstract

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