Microwave characterization of a field effect transistor with dielectrophoretically-aligned single silicon nanowire

Myung Gil Kang, Jae Hyun Ahn, Jongwoon Lee, Dong Hoon Hwang, Hee Tae Kim, Jae Seong Rieh, Dongmok Whang, Maeng Ho Son, Doyeol Ahn, Yun Seop Yu, Sung Woo Hwang

    Research output: Contribution to journalArticlepeer-review

    8 Citations (Scopus)

    Abstract

    Microwave (MW) characteristics of a field effect transistor (FET) incorporating a single silicon nanowire (SiNW) were obtained from S-parameter measurements in the frequency range of 0.05 to 20 GHz. The single SiNW was aligned, using the alternating current (ac) dielectrophoresis alignment method, between the drain and source electrode forming a coplanar waveguide (CPW) structure. Analysis of the FET was performed using equivalent circuit modeling by advanced device system (ADS) simulation. By fitting the measured data with the simulation results, the parameters of the single SiNW FET were obtained and the cutoff frequency was derived.

    Original languageEnglish
    Pages (from-to)06GG121-06GG124
    JournalJapanese journal of applied physics
    Volume49
    Issue number6 PART 2
    DOIs
    Publication statusPublished - 2010 Jun

    ASJC Scopus subject areas

    • General Engineering
    • General Physics and Astronomy

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