Microwave dielectric properties of BaTi4O9 thin film

Suk Jin Lee, Bo Yun Jang, Young Hun Jung, Sahn Nahm, Hwack Joo Lee, Young Sik Kim

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10 Citations (Scopus)


BaTi4O9 thin films have been prepared by RF magnetron sputtering on the Pt/Ti/SiO2/Si substrates and the dielectric properties of the BaTi4O9 film have been investigated at microwave frequency range. The homogeneous BaTi4O9 thin film was obtained when the film was grown at 550 °C and rapid thermal annealed (RTA) at 900 °C for 3 min. The circular-patch capacitor (CPC) was used to measure the microwave dielectric properties of the film. The dielectric constant (εr) and the dielectric loss (tan δ) were successfully measured up to 6 GHz. The εr of the BaTi4O9 thin film slightly increased with the increase of the film thickness. However, the tan δ decreased with increasing the thickness of the film. The εr of BaTi4O9 thin film was similar to that of the BaTi4O9 ceramics, which is about 36-39. The tan δ of the film with 460 nm thickness was very low approximately, 0.0001 at 1-3 GHz. Since BaTi4O9 film has a high εr and a low tan δ, the BaTi4 O9 film can be used as the microwave devices.

Original languageEnglish
Pages (from-to)2165-2168
Number of pages4
JournalJournal of the European Ceramic Society
Issue number10-11
Publication statusPublished - 2006

Bibliographical note

Funding Information:
This work was supported by the Ministry of Science and Technology through the project of Nano-Technology and one of the authors also acknowledges that this work was financially supported by the Ministry of Science and Technology through NRL project.


  • BaTiO
  • Capacitors
  • Dielectric properties
  • Films
  • Microstructure

ASJC Scopus subject areas

  • Ceramics and Composites
  • Materials Chemistry


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