Microwave dielectric properties of low-fired ZnNb2O6 ceramics with BiVO4 addition

Sung Hun Wee; Dong Wan Kim; Sang Im Yoo

doi:10.1111/j.1551-2916.2004.00871.x

Microwave dielectric properties of low-fired ZnNb₂O₆ ceramics with BiVO₄ addition

Sung Hun Wee, Dong Wan Kim, Sang Im Yoo

Research output: Contribution to journal › Article › peer-review

100 Citations (Scopus)

Abstract

The BiVO₄ additive was found effective for low-temperature firing of ZnNb₂O₆ polycrystalline ceramics below 950°C in air without a serious degradation in their microwave dielectric properties. Dense BiVO₄-doped ZnNb₂O₆ samples of a relative sintered density over 95% could be prepared even at 925°C. An optimally processed specimen exhibited excellent microwave dielectric properties of Q·f = 55000 GHz, ε_r = 26, and τ_f = -57 ppm/°C. With increasing BiVO₄ addition up to 20 mol% relative to ZnNb₂O₆, while the quality factor Q·f was gradually decreased, the relative dielectric constant, ε_r, was linearly increased and the temperature coefficient of resonant frequency, τ_f, was slightly increased. The variations in Q·f and ε_r are surely attributable to the residual BiVO₄ in the ZnNb₂O₆ matrix. An unexpected slight increase in τ_f is probably due to the formation of the Bi(V,Nb )O₄-type solid solution.

Original language	English
Pages (from-to)	871-874
Number of pages	4
Journal	Journal of the American Ceramic Society
Volume	87
Issue number	5
DOIs	https://doi.org/10.1111/j.1551-2916.2004.00871.x
Publication status	Published - 2004 May
Externally published	Yes

ASJC Scopus subject areas

Ceramics and Composites
Materials Chemistry

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10.1111/j.1551-2916.2004.00871.x

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title = "Microwave dielectric properties of low-fired ZnNb2O6 ceramics with BiVO4 addition",

abstract = "The BiVO4 additive was found effective for low-temperature firing of ZnNb2O6 polycrystalline ceramics below 950°C in air without a serious degradation in their microwave dielectric properties. Dense BiVO4-doped ZnNb2O6 samples of a relative sintered density over 95% could be prepared even at 925°C. An optimally processed specimen exhibited excellent microwave dielectric properties of Q·f = 55000 GHz, εr = 26, and τf = -57 ppm/°C. With increasing BiVO4 addition up to 20 mol% relative to ZnNb2O6, while the quality factor Q·f was gradually decreased, the relative dielectric constant, εr, was linearly increased and the temperature coefficient of resonant frequency, τf, was slightly increased. The variations in Q·f and εr are surely attributable to the residual BiVO4 in the ZnNb2O6 matrix. An unexpected slight increase in τf is probably due to the formation of the Bi(V,Nb )O4-type solid solution.",

author = "Wee, {Sung Hun} and Kim, {Dong Wan} and Yoo, {Sang Im}",

year = "2004",

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AU - Wee, Sung Hun

AU - Kim, Dong Wan

AU - Yoo, Sang Im

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N2 - The BiVO4 additive was found effective for low-temperature firing of ZnNb2O6 polycrystalline ceramics below 950°C in air without a serious degradation in their microwave dielectric properties. Dense BiVO4-doped ZnNb2O6 samples of a relative sintered density over 95% could be prepared even at 925°C. An optimally processed specimen exhibited excellent microwave dielectric properties of Q·f = 55000 GHz, εr = 26, and τf = -57 ppm/°C. With increasing BiVO4 addition up to 20 mol% relative to ZnNb2O6, while the quality factor Q·f was gradually decreased, the relative dielectric constant, εr, was linearly increased and the temperature coefficient of resonant frequency, τf, was slightly increased. The variations in Q·f and εr are surely attributable to the residual BiVO4 in the ZnNb2O6 matrix. An unexpected slight increase in τf is probably due to the formation of the Bi(V,Nb )O4-type solid solution.

AB - The BiVO4 additive was found effective for low-temperature firing of ZnNb2O6 polycrystalline ceramics below 950°C in air without a serious degradation in their microwave dielectric properties. Dense BiVO4-doped ZnNb2O6 samples of a relative sintered density over 95% could be prepared even at 925°C. An optimally processed specimen exhibited excellent microwave dielectric properties of Q·f = 55000 GHz, εr = 26, and τf = -57 ppm/°C. With increasing BiVO4 addition up to 20 mol% relative to ZnNb2O6, while the quality factor Q·f was gradually decreased, the relative dielectric constant, εr, was linearly increased and the temperature coefficient of resonant frequency, τf, was slightly increased. The variations in Q·f and εr are surely attributable to the residual BiVO4 in the ZnNb2O6 matrix. An unexpected slight increase in τf is probably due to the formation of the Bi(V,Nb )O4-type solid solution.

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Microwave dielectric properties of low-fired ZnNb₂O₆ ceramics with BiVO₄ addition

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