Microwave dielectric properties of Re3Ga5O12 (Re: Nd, Sm, Eu, Dy and Yb) ceramics and effect of TiO2 on the microwave dielectric properties of Sm3Ga5O12 ceramics

Jae Chul Kim; Min Han Kim; Sahn Nahm; Jong Hoo Paik; Jong Hee Kim; Hwack Joo Lee

doi:10.1016/j.jeurceramsoc.2006.11.066

Microwave dielectric properties of Re₃Ga₅O₁₂ (Re: Nd, Sm, Eu, Dy and Yb) ceramics and effect of TiO₂ on the microwave dielectric properties of Sm₃Ga₅O₁₂ ceramics

Jae Chul Kim, Min Han Kim, Sahn Nahm, Jong Hoo Paik, Jong Hee Kim, Hwack Joo Lee

Research output: Contribution to journal › Article › peer-review

31 Citations (Scopus)

Abstract

Re₃Ga₅O₁₂ (Re: Nd, Sm, Eu, Dy and Yb) garnet ceramics sintered at 1350-1500 °C had a high quality factor (Q × f) ranging from 40,000 to 192,173 GHz and a low dielectric constant (ε_r) of between 11.5 and 12.5. They also exhibited a relatively stable temperature coefficient of resonant frequency (τ_f) in the range of -33.7 to -12.4 ppm/°C. In order to tailor the τ_f value, TiO₂ was added to the Sm₃Ga₅O₁₂ ceramics, which exhibited good microwave dielectric properties. The relative density and grain size increased with addition of TiO₂, resulting in the enhancement of Q × f value. The τ_f increased with the addition of TiO₂. Excellent microwave dielectric properties of ε_r = 12.4, Q × f = 240,000 GHz and τ_f = -16.1 ppm/°C were obtained from the Sm₃Ga₅O₁₂ ceramics sintered at 1450 °C for 6 h with 1.0 mol% TiO₂. Therefore, Re₃Ga₅O₁₂ ceramics, especially TiO₂-added Sm₃Ga₅O₁₂ ceramics are good candidates for advanced substrate materials in microwave integrated circuits (MICs) applications.

Original language	English
Pages (from-to)	2865-2870
Number of pages	6
Journal	Journal of the European Ceramic Society
Volume	27
Issue number	8-9 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.jeurceramsoc.2006.11.066
Publication status	Published - 2007

Bibliographical note

Funding Information:
This work was supported by the Ministry of Commerce, Industry and Energy and one of the authors also acknowledges the financial support provided by the Ministry of Science and Technology through the NRL Project.

Keywords

Dielectric properties
Garnet structure
Sintering
Substrates

ASJC Scopus subject areas

Ceramics and Composites
Materials Chemistry

Access to Document

10.1016/j.jeurceramsoc.2006.11.066

Cite this

Microwave dielectric properties of Re₃Ga₅O₁₂ (Re: Nd, Sm, Eu, Dy and Yb) ceramics and effect of TiO₂ on the microwave dielectric properties of Sm₃Ga₅O₁₂ ceramics. / Kim, Jae Chul; Kim, Min Han; Nahm, Sahn et al.
In: Journal of the European Ceramic Society, Vol. 27, No. 8-9 SPEC. ISS., 2007, p. 2865-2870.

Research output: Contribution to journal › Article › peer-review

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title = "Microwave dielectric properties of Re3Ga5O12 (Re: Nd, Sm, Eu, Dy and Yb) ceramics and effect of TiO2 on the microwave dielectric properties of Sm3Ga5O12 ceramics",

abstract = "Re3Ga5O12 (Re: Nd, Sm, Eu, Dy and Yb) garnet ceramics sintered at 1350-1500 °C had a high quality factor (Q × f) ranging from 40,000 to 192,173 GHz and a low dielectric constant (εr) of between 11.5 and 12.5. They also exhibited a relatively stable temperature coefficient of resonant frequency (τf) in the range of -33.7 to -12.4 ppm/°C. In order to tailor the τf value, TiO2 was added to the Sm3Ga5O12 ceramics, which exhibited good microwave dielectric properties. The relative density and grain size increased with addition of TiO2, resulting in the enhancement of Q × f value. The τf increased with the addition of TiO2. Excellent microwave dielectric properties of εr = 12.4, Q × f = 240,000 GHz and τf = -16.1 ppm/°C were obtained from the Sm3Ga5O12 ceramics sintered at 1450 °C for 6 h with 1.0 mol% TiO2. Therefore, Re3Ga5O12 ceramics, especially TiO2-added Sm3Ga5O12 ceramics are good candidates for advanced substrate materials in microwave integrated circuits (MICs) applications.",

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author = "Kim, {Jae Chul} and Kim, {Min Han} and Sahn Nahm and Paik, {Jong Hoo} and Kim, {Jong Hee} and Lee, {Hwack Joo}",

note = "Funding Information: This work was supported by the Ministry of Commerce, Industry and Energy and one of the authors also acknowledges the financial support provided by the Ministry of Science and Technology through the NRL Project.",

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AU - Kim, Min Han

AU - Nahm, Sahn

AU - Paik, Jong Hoo

AU - Kim, Jong Hee

AU - Lee, Hwack Joo

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AB - Re3Ga5O12 (Re: Nd, Sm, Eu, Dy and Yb) garnet ceramics sintered at 1350-1500 °C had a high quality factor (Q × f) ranging from 40,000 to 192,173 GHz and a low dielectric constant (εr) of between 11.5 and 12.5. They also exhibited a relatively stable temperature coefficient of resonant frequency (τf) in the range of -33.7 to -12.4 ppm/°C. In order to tailor the τf value, TiO2 was added to the Sm3Ga5O12 ceramics, which exhibited good microwave dielectric properties. The relative density and grain size increased with addition of TiO2, resulting in the enhancement of Q × f value. The τf increased with the addition of TiO2. Excellent microwave dielectric properties of εr = 12.4, Q × f = 240,000 GHz and τf = -16.1 ppm/°C were obtained from the Sm3Ga5O12 ceramics sintered at 1450 °C for 6 h with 1.0 mol% TiO2. Therefore, Re3Ga5O12 ceramics, especially TiO2-added Sm3Ga5O12 ceramics are good candidates for advanced substrate materials in microwave integrated circuits (MICs) applications.

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