Microwave performance of AlGaN/GaN high-electron-mobility transistors on Si/SiO2/poly-SiC substrates

T. J. Anderson; F. Ren; J. Kim; J. Lin; M. Hlad; B. P. Gila; L. Voss; S. J. Pearton; P. Bove; H. Lahreche; J. Thuret

doi:10.1007/s11664-007-0326-y

Microwave performance of AlGaN/GaN high-electron-mobility transistors on Si/SiO₂/poly-SiC substrates

T. J. Anderson, F. Ren, J. Kim, J. Lin, M. Hlad, B. P. Gila, L. Voss, S. J. Pearton, P. Bove, H. Lahreche, J. Thuret

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The radiofrequency (RF) performance of AlGaN/GaN high-electron-mobility transistors (HEMTs) grown by molecular beam epitaxy (MBE) on Si-on-poly-SiC (SopSiC) substrates formed by the Smart-Cut^TM process is reported. This provides a low-cost, high-thermal-conductivity substrate for power applications. HEMTs with a 0.5 μm gate length show cutoff frequencies (f _T) of 18 to 27 GHz for gate-to-drain distances of 3 to 32 μm and a maximum frequency of oscillation (f _max) of 43 to 47 GHz. The f _max values are slightly lower than comparable devices on sapphire, SiC or Si alone. This approach looks promising for applications requiring cheap large-area substrates and better thermal management than provided by pure Si substrates alone.

Original language	English
Pages (from-to)	384-387
Number of pages	4
Journal	Journal of Electronic Materials
Volume	37
Issue number	4
DOIs	https://doi.org/10.1007/s11664-007-0326-y
Publication status	Published - 2008 Apr
Externally published	Yes

Keywords

GaN
HEMT
Wide bandgap

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1007/s11664-007-0326-y

Cite this

@article{60018d8209a542f4bae3f1478c1455db,

title = "Microwave performance of AlGaN/GaN high-electron-mobility transistors on Si/SiO2/poly-SiC substrates",

abstract = "The radiofrequency (RF) performance of AlGaN/GaN high-electron-mobility transistors (HEMTs) grown by molecular beam epitaxy (MBE) on Si-on-poly-SiC (SopSiC) substrates formed by the Smart-CutTM process is reported. This provides a low-cost, high-thermal-conductivity substrate for power applications. HEMTs with a 0.5 μm gate length show cutoff frequencies (f T) of 18 to 27 GHz for gate-to-drain distances of 3 to 32 μm and a maximum frequency of oscillation (f max) of 43 to 47 GHz. The f max values are slightly lower than comparable devices on sapphire, SiC or Si alone. This approach looks promising for applications requiring cheap large-area substrates and better thermal management than provided by pure Si substrates alone.",

keywords = "GaN, HEMT, Wide bandgap",

author = "Anderson, {T. J.} and F. Ren and J. Kim and J. Lin and M. Hlad and Gila, {B. P.} and L. Voss and Pearton, {S. J.} and P. Bove and H. Lahreche and J. Thuret",

note = "Funding Information: The work at UF is partially supported by Air Force Research Laboratory under Contract Number FA 8650-04-2-1619 (monitored by T. Dalrymple), ONR grant (Contract No. N00014-98-1-0204) and monitored by Dr. H. Dietrich, Air Force Research Laboratory under Contract Number FA 8650-04-2-1619, AFOSR (F49620-02-1-0366, G. Witt).",

year = "2008",

month = apr,

doi = "10.1007/s11664-007-0326-y",

language = "English",

volume = "37",

pages = "384--387",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

number = "4",

}

TY - JOUR

T1 - Microwave performance of AlGaN/GaN high-electron-mobility transistors on Si/SiO2/poly-SiC substrates

AU - Anderson, T. J.

AU - Ren, F.

AU - Kim, J.

AU - Lin, J.

AU - Hlad, M.

AU - Gila, B. P.

AU - Voss, L.

AU - Pearton, S. J.

AU - Bove, P.

AU - Lahreche, H.

AU - Thuret, J.

N1 - Funding Information: The work at UF is partially supported by Air Force Research Laboratory under Contract Number FA 8650-04-2-1619 (monitored by T. Dalrymple), ONR grant (Contract No. N00014-98-1-0204) and monitored by Dr. H. Dietrich, Air Force Research Laboratory under Contract Number FA 8650-04-2-1619, AFOSR (F49620-02-1-0366, G. Witt).

PY - 2008/4

Y1 - 2008/4

N2 - The radiofrequency (RF) performance of AlGaN/GaN high-electron-mobility transistors (HEMTs) grown by molecular beam epitaxy (MBE) on Si-on-poly-SiC (SopSiC) substrates formed by the Smart-CutTM process is reported. This provides a low-cost, high-thermal-conductivity substrate for power applications. HEMTs with a 0.5 μm gate length show cutoff frequencies (f T) of 18 to 27 GHz for gate-to-drain distances of 3 to 32 μm and a maximum frequency of oscillation (f max) of 43 to 47 GHz. The f max values are slightly lower than comparable devices on sapphire, SiC or Si alone. This approach looks promising for applications requiring cheap large-area substrates and better thermal management than provided by pure Si substrates alone.

AB - The radiofrequency (RF) performance of AlGaN/GaN high-electron-mobility transistors (HEMTs) grown by molecular beam epitaxy (MBE) on Si-on-poly-SiC (SopSiC) substrates formed by the Smart-CutTM process is reported. This provides a low-cost, high-thermal-conductivity substrate for power applications. HEMTs with a 0.5 μm gate length show cutoff frequencies (f T) of 18 to 27 GHz for gate-to-drain distances of 3 to 32 μm and a maximum frequency of oscillation (f max) of 43 to 47 GHz. The f max values are slightly lower than comparable devices on sapphire, SiC or Si alone. This approach looks promising for applications requiring cheap large-area substrates and better thermal management than provided by pure Si substrates alone.

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KW - Wide bandgap

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