Millimeter-wave band CMOS RF phased-array transceiver IC designs for 5G applications

H. C. Park; D. Kang; J. Lee; D. Minn; Y. Aoki; K. Kim; S. Lee; D. Lee; S. Kim; J. Kim; W. Lee; C. Kim; S. Park; J. Park; B. Suh; J. Jang; M. Kim; K. Min; S. Jeon; A. S. Ryu; Y. Kim; J. H. Lee; J. Son; S. G. Yang

doi:10.1109/IEDM13553.2020.9371948

Millimeter-wave band CMOS RF phased-array transceiver IC designs for 5G applications

H. C. Park, D. Kang, J. Lee, D. Minn, Y. Aoki, K. Kim, S. Lee, D. Lee, S. Kim, J. Kim, W. Lee, C. Kim, S. Park, J. Park, B. Suh, J. Jang, M. Kim, K. Min, S. Jeon, A. S. RyuY. Kim, J. H. Lee, J. Son, S. G. Yang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

13 Citations (Scopus)

Abstract

This paper presents design challenges and solutions for the fifth generation (5G) phased-array transceiver ICs in millimeter-wave (MMW) frequency bands. A 28nm bulk CMOS device technology is selected to integrate multiple RF phased-array elements in a single-chip to achieve a high-level of TX EIRP and RX sensitivity. Several design approaches of gain, POUT, stability, reliability and linearity enhancement techniques are applied to enable CMOS as a key device solution for 5G applications in MMW frequency bands. A 39GHz band 16-channel CMOS RF phased-array transceiver IC is designed and can support 4T/4R MIMO base-station applications including ×64 RF phased-array ICs (total 1, 024 phased-array elements). T/RX paths have gain dynamic ranges of >30/40dB for flexibility and scalability. The TX path shows POUT/Ch. of >6.0dBm at EVM of -34dB (800MHz) and PDC/Ch. of 105mW. The RX path performs NF of 4.2dB, EVM of -38dB (100MHz) and PDC/Ch. of 39mW. These state-of-the-art results lead to TX EIRP of >55dBm and RX sensitivity of <-113dBm/100MHz in the 5G NR base-station system.

Original language	English
Title of host publication	2020 IEEE International Electron Devices Meeting, IEDM 2020
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	17.2.1-17.2.4
ISBN (Electronic)	9781728188881
DOIs	https://doi.org/10.1109/IEDM13553.2020.9371948
Publication status	Published - 2020 Dec 12
Externally published	Yes
Event	66th Annual IEEE International Electron Devices Meeting, IEDM 2020 - Virtual, San Francisco, United States Duration: 2020 Dec 12 → 2020 Dec 18

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Volume	2020-December
ISSN (Print)	0163-1918

Conference

Conference	66th Annual IEEE International Electron Devices Meeting, IEDM 2020
Country/Territory	United States
City	Virtual, San Francisco
Period	20/12/12 → 20/12/18

Bibliographical note

Publisher Copyright:
© 2020 IEEE.

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

Access to Document

10.1109/IEDM13553.2020.9371948

Cite this

Park, H. C., Kang, D., Lee, J., Minn, D., Aoki, Y., Kim, K., Lee, S., Lee, D., Kim, S., Kim, J., Lee, W., Kim, C., Park, S., Park, J., Suh, B., Jang, J., Kim, M., Min, K., Jeon, S., ... Yang, S. G. (2020). Millimeter-wave band CMOS RF phased-array transceiver IC designs for 5G applications. In 2020 IEEE International Electron Devices Meeting, IEDM 2020 (pp. 17.2.1-17.2.4). Article 9371948 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2020-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM13553.2020.9371948

Millimeter-wave band CMOS RF phased-array transceiver IC designs for 5G applications. / Park, H. C.; Kang, D.; Lee, J. et al.
2020 IEEE International Electron Devices Meeting, IEDM 2020. Institute of Electrical and Electronics Engineers Inc., 2020. p. 17.2.1-17.2.4 9371948 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2020-December).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Park, HC, Kang, D, Lee, J, Minn, D, Aoki, Y, Kim, K, Lee, S, Lee, D, Kim, S, Kim, J, Lee, W, Kim, C, Park, S, Park, J, Suh, B, Jang, J, Kim, M, Min, K, Jeon, S, Ryu, AS, Kim, Y, Lee, JH, Son, J & Yang, SG 2020, Millimeter-wave band CMOS RF phased-array transceiver IC designs for 5G applications. in 2020 IEEE International Electron Devices Meeting, IEDM 2020., 9371948, Technical Digest - International Electron Devices Meeting, IEDM, vol. 2020-December, Institute of Electrical and Electronics Engineers Inc., pp. 17.2.1-17.2.4, 66th Annual IEEE International Electron Devices Meeting, IEDM 2020, Virtual, San Francisco, United States, 20/12/12. https://doi.org/10.1109/IEDM13553.2020.9371948

Park HC, Kang D, Lee J, Minn D, Aoki Y, Kim K et al. Millimeter-wave band CMOS RF phased-array transceiver IC designs for 5G applications. In 2020 IEEE International Electron Devices Meeting, IEDM 2020. Institute of Electrical and Electronics Engineers Inc. 2020. p. 17.2.1-17.2.4. 9371948. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM13553.2020.9371948

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title = "Millimeter-wave band CMOS RF phased-array transceiver IC designs for 5G applications",

abstract = "This paper presents design challenges and solutions for the fifth generation (5G) phased-array transceiver ICs in millimeter-wave (MMW) frequency bands. A 28nm bulk CMOS device technology is selected to integrate multiple RF phased-array elements in a single-chip to achieve a high-level of TX EIRP and RX sensitivity. Several design approaches of gain, POUT, stability, reliability and linearity enhancement techniques are applied to enable CMOS as a key device solution for 5G applications in MMW frequency bands. A 39GHz band 16-channel CMOS RF phased-array transceiver IC is designed and can support 4T/4R MIMO base-station applications including ×64 RF phased-array ICs (total 1, 024 phased-array elements). T/RX paths have gain dynamic ranges of >30/40dB for flexibility and scalability. The TX path shows POUT/Ch. of >6.0dBm at EVM of -34dB (800MHz) and PDC/Ch. of 105mW. The RX path performs NF of 4.2dB, EVM of -38dB (100MHz) and PDC/Ch. of 39mW. These state-of-the-art results lead to TX EIRP of >55dBm and RX sensitivity of <-113dBm/100MHz in the 5G NR base-station system.",

author = "Park, {H. C.} and D. Kang and J. Lee and D. Minn and Y. Aoki and K. Kim and S. Lee and D. Lee and S. Kim and J. Kim and W. Lee and C. Kim and S. Park and J. Park and B. Suh and J. Jang and M. Kim and K. Min and S. Jeon and Ryu, {A. S.} and Y. Kim and Lee, {J. H.} and J. Son and Yang, {S. G.}",

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AU - Park, J.

AU - Suh, B.

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AB - This paper presents design challenges and solutions for the fifth generation (5G) phased-array transceiver ICs in millimeter-wave (MMW) frequency bands. A 28nm bulk CMOS device technology is selected to integrate multiple RF phased-array elements in a single-chip to achieve a high-level of TX EIRP and RX sensitivity. Several design approaches of gain, POUT, stability, reliability and linearity enhancement techniques are applied to enable CMOS as a key device solution for 5G applications in MMW frequency bands. A 39GHz band 16-channel CMOS RF phased-array transceiver IC is designed and can support 4T/4R MIMO base-station applications including ×64 RF phased-array ICs (total 1, 024 phased-array elements). T/RX paths have gain dynamic ranges of >30/40dB for flexibility and scalability. The TX path shows POUT/Ch. of >6.0dBm at EVM of -34dB (800MHz) and PDC/Ch. of 105mW. The RX path performs NF of 4.2dB, EVM of -38dB (100MHz) and PDC/Ch. of 39mW. These state-of-the-art results lead to TX EIRP of >55dBm and RX sensitivity of <-113dBm/100MHz in the 5G NR base-station system.

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Millimeter-wave band CMOS RF phased-array transceiver IC designs for 5G applications

Abstract

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Conference

Bibliographical note

ASJC Scopus subject areas

Access to Document

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