Minority-carrier injection-enhanced recovery of radiation-induced defects in n+p AllnGaP solar cells

Hae Seo K. Lee; Masafumi Yamaguchi; Nicholas J. Ekins-Daukes; Aurangzeb Khan; Tatsuya Takamoto; Mitsuru Imaizumi; Takeshi Ohshima; Hisayoshi Ltoh

doi:10.1109/WCPEC.2006.279848

Minority-carrier injection-enhanced recovery of radiation-induced defects in n⁺p AllnGaP solar cells

Hae Seo K. Lee, Masafumi Yamaguchi, Nicholas J. Ekins-Daukes, Aurangzeb Khan, Tatsuya Takamoto, Mitsuru Imaizumi, Takeshi Ohshima, Hisayoshi Ltoh

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The recovery of defects introduced in n⁺/p AllnGaP solar cells under the 1 MeV electron / 30keV proton irradiation by the minority-carrier injection-enhanced annealing is presented here. As a forward bias injection (100mA/cm²) time increases, DLTS signal of H1 and H2 defects, which are introduced by the 1 MeV electron irradiation, decreases, indicating that they are annealed out due to nonradiative electron-hole recombination enhanced process. The activation energy ΔE for the recovery of defect centers (H 1 and H2) by the injection was 0.50eV and 0.60eV, respectively. Under the 30keV proton irradiation, HP1 and HP2 defect centers were produced, and the annealing activation energy of AllnGaP solar cells obtained from the injection (1 A/cm²) was 0.42eV.

Original language	English
Title of host publication	Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Publisher	IEEE Computer Society
Pages	1826-1829
Number of pages	4
ISBN (Print)	1424400163, 9781424400164
DOIs	https://doi.org/10.1109/WCPEC.2006.279848
Publication status	Published - 2006
Externally published	Yes
Event	2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 - Waikoloa, HI, United States Duration: 2006 May 7 → 2006 May 12

Publication series

Name	Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Volume	2

Other

Other	2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Country/Territory	United States
City	Waikoloa, HI
Period	06/5/7 → 06/5/12

ASJC Scopus subject areas

Renewable Energy, Sustainability and the Environment
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Materials Chemistry

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1109/WCPEC.2006.279848

Cite this

Lee, H. S. K., Yamaguchi, M., Ekins-Daukes, N. J., Khan, A., Takamoto, T., Imaizumi, M., Ohshima, T., & Ltoh, H. (2006). Minority-carrier injection-enhanced recovery of radiation-induced defects in n⁺p AllnGaP solar cells. In Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 (pp. 1826-1829). Article 4060014 (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4; Vol. 2). IEEE Computer Society. https://doi.org/10.1109/WCPEC.2006.279848

Minority-carrier injection-enhanced recovery of radiation-induced defects in n⁺p AllnGaP solar cells. / Lee, Hae Seo K.; Yamaguchi, Masafumi; Ekins-Daukes, Nicholas J. et al.
Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4. IEEE Computer Society, 2006. p. 1826-1829 4060014 (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4; Vol. 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Lee, HSK, Yamaguchi, M, Ekins-Daukes, NJ, Khan, A, Takamoto, T, Imaizumi, M, Ohshima, T & Ltoh, H 2006, Minority-carrier injection-enhanced recovery of radiation-induced defects in n⁺p AllnGaP solar cells. in Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4., 4060014, Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4, vol. 2, IEEE Computer Society, pp. 1826-1829, 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4, Waikoloa, HI, United States, 06/5/7. https://doi.org/10.1109/WCPEC.2006.279848

Lee HSK, Yamaguchi M, Ekins-Daukes NJ, Khan A, Takamoto T, Imaizumi M et al. Minority-carrier injection-enhanced recovery of radiation-induced defects in n⁺p AllnGaP solar cells. In Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4. IEEE Computer Society. 2006. p. 1826-1829. 4060014. (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4). doi: 10.1109/WCPEC.2006.279848

Lee, Hae Seo K. ; Yamaguchi, Masafumi ; Ekins-Daukes, Nicholas J. et al. / Minority-carrier injection-enhanced recovery of radiation-induced defects in n⁺p AllnGaP solar cells. Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4. IEEE Computer Society, 2006. pp. 1826-1829 (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4).

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abstract = "The recovery of defects introduced in n+/p AllnGaP solar cells under the 1 MeV electron / 30keV proton irradiation by the minority-carrier injection-enhanced annealing is presented here. As a forward bias injection (100mA/cm2) time increases, DLTS signal of H1 and H2 defects, which are introduced by the 1 MeV electron irradiation, decreases, indicating that they are annealed out due to nonradiative electron-hole recombination enhanced process. The activation energy ΔE for the recovery of defect centers (H 1 and H2) by the injection was 0.50eV and 0.60eV, respectively. Under the 30keV proton irradiation, HP1 and HP2 defect centers were produced, and the annealing activation energy of AllnGaP solar cells obtained from the injection (1 A/cm2) was 0.42eV.",

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AU - Khan, Aurangzeb

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