@inproceedings{592036559e334dbc8df010550a9e25e4,
title = "Minority carrier lifetime of silicon wafer passivated by PECVD amorphous silicon layers for silicon heterojunction solar cells",
abstract = "Passivation is the one of important factors in the solar cells. The measurement of effectiveness of the passivation layer was based on quasi-steady-state photoconductance. In the case of the sample which was passivated using p-type amorphous silicon(a-Si:H), the minority carrier lifetime was 8.9μs. When the passivation layer was intrinsic a-Si:H, the minority carrier lifetime was 221.3μs. Considering the minority carrier lifetimes of both samples, silicon heterojunction solar cells were fabricated with and without intrinsic a-Si:H layer. the efficiency of the sample passivated with intrinsic amorphous silicon was 13.52%, whereas it was only 11.58% when this layer was not employed.",
author = "Kang, {Min Gu} and Tark, {Sung Ju} and Lee, {Joon Sung} and Lee, {Jeong Chul} and Yoon, {Kyung Hoon} and Jinsoo Song and Lim, {Hee Jin} and Donghwan Kim",
year = "2008",
doi = "10.1109/PVSC.2008.4922525",
language = "English",
isbn = "9781424416417",
series = "Conference Record of the IEEE Photovoltaic Specialists Conference",
booktitle = "33rd IEEE Photovoltaic Specialists Conference, PVSC 2008",
note = "33rd IEEE Photovoltaic Specialists Conference, PVSC 2008 ; Conference date: 11-05-2008 Through 16-05-2008",
}