Minority carrier lifetime of silicon wafer passivated by PECVD amorphous silicon layers for silicon heterojunction solar cells

Min Gu Kang; Sung Ju Tark; Joon Sung Lee; Jeong Chul Lee; Kyung Hoon Yoon; Jinsoo Song; Hee Jin Lim; Donghwan Kim

doi:10.1109/PVSC.2008.4922525

Minority carrier lifetime of silicon wafer passivated by PECVD amorphous silicon layers for silicon heterojunction solar cells

Min Gu Kang, Sung Ju Tark, Joon Sung Lee, Jeong Chul Lee, Kyung Hoon Yoon, Jinsoo Song, Hee Jin Lim, Donghwan Kim

Department of Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Passivation is the one of important factors in the solar cells. The measurement of effectiveness of the passivation layer was based on quasi-steady-state photoconductance. In the case of the sample which was passivated using p-type amorphous silicon(a-Si:H), the minority carrier lifetime was 8.9μs. When the passivation layer was intrinsic a-Si:H, the minority carrier lifetime was 221.3μs. Considering the minority carrier lifetimes of both samples, silicon heterojunction solar cells were fabricated with and without intrinsic a-Si:H layer. the efficiency of the sample passivated with intrinsic amorphous silicon was 13.52%, whereas it was only 11.58% when this layer was not employed.

Original language	English
Title of host publication	33rd IEEE Photovoltaic Specialists Conference, PVSC 2008
DOIs	https://doi.org/10.1109/PVSC.2008.4922525
Publication status	Published - 2008
Event	33rd IEEE Photovoltaic Specialists Conference, PVSC 2008 - San Diego, CA, United States Duration: 2008 May 11 → 2008 May 16

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Other

Other	33rd IEEE Photovoltaic Specialists Conference, PVSC 2008
Country/Territory	United States
City	San Diego, CA
Period	08/5/11 → 08/5/16

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

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10.1109/PVSC.2008.4922525

Cite this

Kang, M. G., Tark, S. J., Lee, J. S., Lee, J. C., Yoon, K. H., Song, J., Lim, H. J., & Kim, D. (2008). Minority carrier lifetime of silicon wafer passivated by PECVD amorphous silicon layers for silicon heterojunction solar cells. In 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008 Article 4922525 (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2008.4922525

Minority carrier lifetime of silicon wafer passivated by PECVD amorphous silicon layers for silicon heterojunction solar cells. / Kang, Min Gu; Tark, Sung Ju; Lee, Joon Sung et al.
33rd IEEE Photovoltaic Specialists Conference, PVSC 2008. 2008. 4922525 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kang, MG, Tark, SJ, Lee, JS, Lee, JC, Yoon, KH, Song, J, Lim, HJ & Kim, D 2008, Minority carrier lifetime of silicon wafer passivated by PECVD amorphous silicon layers for silicon heterojunction solar cells. in 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008., 4922525, Conference Record of the IEEE Photovoltaic Specialists Conference, 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008, San Diego, CA, United States, 08/5/11. https://doi.org/10.1109/PVSC.2008.4922525

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abstract = "Passivation is the one of important factors in the solar cells. The measurement of effectiveness of the passivation layer was based on quasi-steady-state photoconductance. In the case of the sample which was passivated using p-type amorphous silicon(a-Si:H), the minority carrier lifetime was 8.9μs. When the passivation layer was intrinsic a-Si:H, the minority carrier lifetime was 221.3μs. Considering the minority carrier lifetimes of both samples, silicon heterojunction solar cells were fabricated with and without intrinsic a-Si:H layer. the efficiency of the sample passivated with intrinsic amorphous silicon was 13.52%, whereas it was only 11.58% when this layer was not employed.",

author = "Kang, {Min Gu} and Tark, {Sung Ju} and Lee, {Joon Sung} and Lee, {Jeong Chul} and Yoon, {Kyung Hoon} and Jinsoo Song and Lim, {Hee Jin} and Donghwan Kim",

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AU - Kang, Min Gu

AU - Tark, Sung Ju

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AU - Lee, Jeong Chul

AU - Yoon, Kyung Hoon

AU - Song, Jinsoo

AU - Lim, Hee Jin

AU - Kim, Donghwan

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AB - Passivation is the one of important factors in the solar cells. The measurement of effectiveness of the passivation layer was based on quasi-steady-state photoconductance. In the case of the sample which was passivated using p-type amorphous silicon(a-Si:H), the minority carrier lifetime was 8.9μs. When the passivation layer was intrinsic a-Si:H, the minority carrier lifetime was 221.3μs. Considering the minority carrier lifetimes of both samples, silicon heterojunction solar cells were fabricated with and without intrinsic a-Si:H layer. the efficiency of the sample passivated with intrinsic amorphous silicon was 13.52%, whereas it was only 11.58% when this layer was not employed.

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Minority carrier lifetime of silicon wafer passivated by PECVD amorphous silicon layers for silicon heterojunction solar cells

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