Mixture behavior and microwave dielectric properties in the low-fired TiO2-CuO system

Dong Wan Kim; Byungwoo Park; Jang Hoon Chung; Kug Sun Hong

doi:10.1143/jjap.39.2696

Mixture behavior and microwave dielectric properties in the low-fired TiO₂-CuO system

Dong Wan Kim, Byungwoo Park, Jang Hoon Chung, Kug Sun Hong

Research output: Contribution to journal › Article › peer-review

78 Citations (Scopus)

Abstract

The mixture behavior and microwave dielectric properties of TiO₂ doped with CuO sintered at around 900°C for 2 h were investigated using X-ray powder diffraction and a network analyzer. Low-fired TiO₂ with 2% CuO had a quality factor of 14000, relative dielectric constant (ε_r) of 98, and a temperature coefficient of resonant frequency (τ_f) of 374 ppm/°C. The microwave dielectric properties of low-fired, CuO doped TiO₂ could be interpreted by observing the dielectric properties of CuO high loss tangent (tan δ), low dielectric constant, and a negative temperature coefficient of resonant frequency. The microwave dielectric properties of low-fired, CuO doped Ti0₂ showed a dependence on the mixture formation of TiO₂ and CuO. More importantly, the ε_r of low-fired TiO₂ with CuO could be predicted by the logarithmic mixing model. Therefore, the variation of the microwave dielectric properties was attributed to the mixture behavior of TiO₂ and CuO.

Original language	English
Pages (from-to)	2696-2700
Number of pages	5
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	39
Issue number	5 A
DOIs	https://doi.org/10.1143/jjap.39.2696
Publication status	Published - 2000 May 1
Externally published	Yes

Keywords

CuO
Low-firing
Microwave properties
Mixture
TiO

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

Access to Document

10.1143/jjap.39.2696

Cite this

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title = "Mixture behavior and microwave dielectric properties in the low-fired TiO2-CuO system",

abstract = "The mixture behavior and microwave dielectric properties of TiO2 doped with CuO sintered at around 900°C for 2 h were investigated using X-ray powder diffraction and a network analyzer. Low-fired TiO2 with 2% CuO had a quality factor of 14000, relative dielectric constant (εr) of 98, and a temperature coefficient of resonant frequency (τf) of 374 ppm/°C. The microwave dielectric properties of low-fired, CuO doped TiO2 could be interpreted by observing the dielectric properties of CuO high loss tangent (tan δ), low dielectric constant, and a negative temperature coefficient of resonant frequency. The microwave dielectric properties of low-fired, CuO doped Ti02 showed a dependence on the mixture formation of TiO2 and CuO. More importantly, the εr of low-fired TiO2 with CuO could be predicted by the logarithmic mixing model. Therefore, the variation of the microwave dielectric properties was attributed to the mixture behavior of TiO2 and CuO.",

keywords = "CuO, Low-firing, Microwave properties, Mixture, TiO",

author = "Kim, {Dong Wan} and Byungwoo Park and Chung, {Jang Hoon} and Hong, {Kug Sun}",

year = "2000",

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T1 - Mixture behavior and microwave dielectric properties in the low-fired TiO2-CuO system

AU - Kim, Dong Wan

AU - Park, Byungwoo

AU - Chung, Jang Hoon

AU - Hong, Kug Sun

PY - 2000/5/1

Y1 - 2000/5/1

N2 - The mixture behavior and microwave dielectric properties of TiO2 doped with CuO sintered at around 900°C for 2 h were investigated using X-ray powder diffraction and a network analyzer. Low-fired TiO2 with 2% CuO had a quality factor of 14000, relative dielectric constant (εr) of 98, and a temperature coefficient of resonant frequency (τf) of 374 ppm/°C. The microwave dielectric properties of low-fired, CuO doped TiO2 could be interpreted by observing the dielectric properties of CuO high loss tangent (tan δ), low dielectric constant, and a negative temperature coefficient of resonant frequency. The microwave dielectric properties of low-fired, CuO doped Ti02 showed a dependence on the mixture formation of TiO2 and CuO. More importantly, the εr of low-fired TiO2 with CuO could be predicted by the logarithmic mixing model. Therefore, the variation of the microwave dielectric properties was attributed to the mixture behavior of TiO2 and CuO.

AB - The mixture behavior and microwave dielectric properties of TiO2 doped with CuO sintered at around 900°C for 2 h were investigated using X-ray powder diffraction and a network analyzer. Low-fired TiO2 with 2% CuO had a quality factor of 14000, relative dielectric constant (εr) of 98, and a temperature coefficient of resonant frequency (τf) of 374 ppm/°C. The microwave dielectric properties of low-fired, CuO doped TiO2 could be interpreted by observing the dielectric properties of CuO high loss tangent (tan δ), low dielectric constant, and a negative temperature coefficient of resonant frequency. The microwave dielectric properties of low-fired, CuO doped Ti02 showed a dependence on the mixture formation of TiO2 and CuO. More importantly, the εr of low-fired TiO2 with CuO could be predicted by the logarithmic mixing model. Therefore, the variation of the microwave dielectric properties was attributed to the mixture behavior of TiO2 and CuO.

KW - CuO

KW - Low-firing

KW - Microwave properties

KW - Mixture

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