Abstract
The mixture behavior and microwave dielectric properties of TiO2 doped with CuO sintered at around 900°C for 2 h were investigated using X-ray powder diffraction and a network analyzer. Low-fired TiO2 with 2% CuO had a quality factor of 14000, relative dielectric constant (εr) of 98, and a temperature coefficient of resonant frequency (τf) of 374 ppm/°C. The microwave dielectric properties of low-fired, CuO doped TiO2 could be interpreted by observing the dielectric properties of CuO high loss tangent (tan δ), low dielectric constant, and a negative temperature coefficient of resonant frequency. The microwave dielectric properties of low-fired, CuO doped Ti02 showed a dependence on the mixture formation of TiO2 and CuO. More importantly, the εr of low-fired TiO2 with CuO could be predicted by the logarithmic mixing model. Therefore, the variation of the microwave dielectric properties was attributed to the mixture behavior of TiO2 and CuO.
Original language | English |
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Pages (from-to) | 2696-2700 |
Number of pages | 5 |
Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
Volume | 39 |
Issue number | 5 A |
DOIs | |
Publication status | Published - 2000 May 1 |
Externally published | Yes |
Keywords
- CuO
- Low-firing
- Microwave properties
- Mixture
- TiO
ASJC Scopus subject areas
- General Engineering
- General Physics and Astronomy