Abstract
This Letter presents a single-pole single-throw (SPST) switch for high-power applications in the mm-wave frequency band. A stacked-FET structure is adopted in the shunt switching cell for reducing the insertion loss and improving the linearity of the switch. To enhance the isolation, the parasitic inductance of the stacked-FET structure is resonated out by connecting a series capacitor. The number of stacked FETs in each shunt cell and the number of the shunt cells are optimised considering the trade-off among the insertion loss, isolation, and linearity. The SPST switch is fabricated in a 70-nm GaAs m-HEMT process. The measurement shows that the insertion loss is <1.1 dB, and the isolation is >25 dB over the frequency from 59 to 77 GHz. Both the insertion loss and isolation are not compressed at all until the input power reaches 19.5 dBm at 75 GHz.
| Original language | English |
|---|---|
| Pages (from-to) | 719-721 |
| Number of pages | 3 |
| Journal | Electronics Letters |
| Volume | 56 |
| Issue number | 14 |
| DOIs | |
| Publication status | Published - 2020 Jul 9 |
Bibliographical note
Funding Information:Acknowledgments: This workwas supported by the Future Combat System Network Technology Research Center program of Defense Acquisition Program Administration and Agency for Defense Development. (UD190033ED) © The Institution of Engineering and Technology 2020 Submitted: 30 March 2020 E-first: 28 April 2020 doi: 10.1049/el.2020.0969 One or more of the Figures in this Letter are available in colour online. Younghwan Kim and Sanggeun Jeon (School of Electrical Engineering Korea University, Seoul 02841, Republic of Korea) ✉ E-mail: [email protected]
Funding Information:
This workwas supported by the Future Combat System Network Technology Research Center program of Defense Acquisition Program Administration and Agency for Defense Development. (UD190033ED)
Publisher Copyright:
© The Institution of Engineering and Technology 2020
ASJC Scopus subject areas
- Electrical and Electronic Engineering