This paper presents a mobility analysis of the surface roughness scattering along the different interfaces of FinFET devices. Using temperature dependent analysis of effective mobility, quantitative information about the influence of the roughness could be obtained directly on the device. The sidewall and top surface drain current components were estimated from the total drain currents of different fin width conditions. Using a conventional mobility model, it was possible to fit the gate voltage and temperature dependence of sidewall and top surface mobilities. This procedure allowed the contribution of the surface roughness scattering to be quantified with nondestructive characterization. Significant differences were observed for sidewalls and top surface. In the specific case under study, surface roughness scattering on sidewalls was about three times stronger than on top surface for n-channel FinFETs, whereas it remained similar for p-channel ones.
Bibliographical noteFunding Information:
This work has been supported by the European Network of Excellence Nanosil under Contract No. 216171. Jae Woo Lee and Doyoung Jang acknowledge support by the Nanoscience Foundation, Grenoble, France, the Korean National Research Foundation (NRF, No. 2009-0083380) by the World Class University program (WCU, R322009000100820), by Ministry of Education, Science and Technology (MEST) through GRL program, and CNRS-KIST LIA collaboration.
- Effective mobility
- Low temperature measurement
- Surface roughness scattering
- Surface separation
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry