Mobility analysis of surface roughness scattering in FinFET devices

Jae Woo Lee; Doyoung Jang; Mireille Mouis; Gyu Tae Kim; Thomas Chiarella; Thomas Hoffmann; Gérard Ghibaudo

doi:10.1016/j.sse.2011.04.020

Mobility analysis of surface roughness scattering in FinFET devices

Jae Woo Lee, Doyoung Jang, Mireille Mouis, Gyu Tae Kim, Thomas Chiarella, Thomas Hoffmann, Gérard Ghibaudo

Research output: Contribution to journal › Article › peer-review

38 Citations (Scopus)

Abstract

This paper presents a mobility analysis of the surface roughness scattering along the different interfaces of FinFET devices. Using temperature dependent analysis of effective mobility, quantitative information about the influence of the roughness could be obtained directly on the device. The sidewall and top surface drain current components were estimated from the total drain currents of different fin width conditions. Using a conventional mobility model, it was possible to fit the gate voltage and temperature dependence of sidewall and top surface mobilities. This procedure allowed the contribution of the surface roughness scattering to be quantified with nondestructive characterization. Significant differences were observed for sidewalls and top surface. In the specific case under study, surface roughness scattering on sidewalls was about three times stronger than on top surface for n-channel FinFETs, whereas it remained similar for p-channel ones.

Original language	English
Pages (from-to)	195-201
Number of pages	7
Journal	Solid-State Electronics
Volume	62
Issue number	1
DOIs	https://doi.org/10.1016/j.sse.2011.04.020
Publication status	Published - 2011 Aug
Externally published	Yes

Bibliographical note

Funding Information:
This work has been supported by the European Network of Excellence Nanosil under Contract No. 216171. Jae Woo Lee and Doyoung Jang acknowledge support by the Nanoscience Foundation, Grenoble, France, the Korean National Research Foundation (NRF, No. 2009-0083380) by the World Class University program (WCU, R322009000100820), by Ministry of Education, Science and Technology (MEST) through GRL program, and CNRS-KIST LIA collaboration.

Keywords

Effective mobility
FinFET
Low temperature measurement
Surface roughness scattering
Surface separation

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/j.sse.2011.04.020

Cite this

@article{2dd9639593d746d2bcaa840f42a571ce,

title = "Mobility analysis of surface roughness scattering in FinFET devices",

abstract = "This paper presents a mobility analysis of the surface roughness scattering along the different interfaces of FinFET devices. Using temperature dependent analysis of effective mobility, quantitative information about the influence of the roughness could be obtained directly on the device. The sidewall and top surface drain current components were estimated from the total drain currents of different fin width conditions. Using a conventional mobility model, it was possible to fit the gate voltage and temperature dependence of sidewall and top surface mobilities. This procedure allowed the contribution of the surface roughness scattering to be quantified with nondestructive characterization. Significant differences were observed for sidewalls and top surface. In the specific case under study, surface roughness scattering on sidewalls was about three times stronger than on top surface for n-channel FinFETs, whereas it remained similar for p-channel ones.",

keywords = "Effective mobility, FinFET, Low temperature measurement, Surface roughness scattering, Surface separation",

author = "Lee, {Jae Woo} and Doyoung Jang and Mireille Mouis and Kim, {Gyu Tae} and Thomas Chiarella and Thomas Hoffmann and G{\'e}rard Ghibaudo",

note = "Funding Information: This work has been supported by the European Network of Excellence Nanosil under Contract No. 216171. Jae Woo Lee and Doyoung Jang acknowledge support by the Nanoscience Foundation, Grenoble, France, the Korean National Research Foundation (NRF, No. 2009-0083380) by the World Class University program (WCU, R322009000100820), by Ministry of Education, Science and Technology (MEST) through GRL program, and CNRS-KIST LIA collaboration.",

year = "2011",

month = aug,

doi = "10.1016/j.sse.2011.04.020",

language = "English",

volume = "62",

pages = "195--201",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

number = "1",

}

TY - JOUR

T1 - Mobility analysis of surface roughness scattering in FinFET devices

AU - Lee, Jae Woo

AU - Jang, Doyoung

AU - Mouis, Mireille

AU - Kim, Gyu Tae

AU - Chiarella, Thomas

AU - Hoffmann, Thomas

AU - Ghibaudo, Gérard

N1 - Funding Information: This work has been supported by the European Network of Excellence Nanosil under Contract No. 216171. Jae Woo Lee and Doyoung Jang acknowledge support by the Nanoscience Foundation, Grenoble, France, the Korean National Research Foundation (NRF, No. 2009-0083380) by the World Class University program (WCU, R322009000100820), by Ministry of Education, Science and Technology (MEST) through GRL program, and CNRS-KIST LIA collaboration.

PY - 2011/8

Y1 - 2011/8

N2 - This paper presents a mobility analysis of the surface roughness scattering along the different interfaces of FinFET devices. Using temperature dependent analysis of effective mobility, quantitative information about the influence of the roughness could be obtained directly on the device. The sidewall and top surface drain current components were estimated from the total drain currents of different fin width conditions. Using a conventional mobility model, it was possible to fit the gate voltage and temperature dependence of sidewall and top surface mobilities. This procedure allowed the contribution of the surface roughness scattering to be quantified with nondestructive characterization. Significant differences were observed for sidewalls and top surface. In the specific case under study, surface roughness scattering on sidewalls was about three times stronger than on top surface for n-channel FinFETs, whereas it remained similar for p-channel ones.

AB - This paper presents a mobility analysis of the surface roughness scattering along the different interfaces of FinFET devices. Using temperature dependent analysis of effective mobility, quantitative information about the influence of the roughness could be obtained directly on the device. The sidewall and top surface drain current components were estimated from the total drain currents of different fin width conditions. Using a conventional mobility model, it was possible to fit the gate voltage and temperature dependence of sidewall and top surface mobilities. This procedure allowed the contribution of the surface roughness scattering to be quantified with nondestructive characterization. Significant differences were observed for sidewalls and top surface. In the specific case under study, surface roughness scattering on sidewalls was about three times stronger than on top surface for n-channel FinFETs, whereas it remained similar for p-channel ones.

KW - Effective mobility

KW - FinFET

KW - Low temperature measurement

KW - Surface roughness scattering

KW - Surface separation

UR - http://www.scopus.com/inward/record.url?scp=79957930553&partnerID=8YFLogxK

U2 - 10.1016/j.sse.2011.04.020

DO - 10.1016/j.sse.2011.04.020

M3 - Article

AN - SCOPUS:79957930553

SN - 0038-1101

VL - 62

SP - 195

EP - 201

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 1

ER -

Mobility analysis of surface roughness scattering in FinFET devices

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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