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Model of partitioning of point defect species during precipitation of a misfitting compound in Czochralski silicon
J. Y. Huh
, T. Y. Tan, U. Gösele
Research output
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Contribution to journal
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Article
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peer-review
21
Citations (Scopus)
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Dive into the research topics of 'Model of partitioning of point defect species during precipitation of a misfitting compound in Czochralski silicon'. Together they form a unique fingerprint.
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Keyphrases
Degradation Rate
100%
Free Energy
100%
Czochralski Silicon
100%
Misfit
100%
Intrinsic Point Defects
66%
Maximum Growth Rate
66%
Maximum Principle
66%
Multi-component System
33%
Diffusion Control
33%
Equilibrium Value
33%
Oxide Precipitates
33%
Self-interstitial
33%
Point Defect Concentration
33%
Thermal Equilibrium
33%
Mass Diffusion
33%
Controlled Precipitation
33%
Equilibrium Characteristics
33%
Pseudo-component
33%
Oxygen Precipitation
33%
Entropy Production
33%
Precipitation Process
33%
Engineering
Energy Engineering
100%
Free System
100%
Degradation Rate
100%
Intrinsic Point Defect
66%
Multicomponent System
33%
Thermal Equilibrium
33%
Entropy Production
33%
Material Science
Silicon
100%
Point Defect
100%
Oxide Compound
25%
Chemical Engineering
Free Energy
100%