Modulation doping in ZnO nanorods for electrical nanodevice applications

Jinkyoung Yoo; Chul Ho Lee; Yong Joo Doh; Hye Seong Jung; Gyu Chul Yi

doi:10.1063/1.3148666

Modulation doping in ZnO nanorods for electrical nanodevice applications

Jinkyoung Yoo, Chul Ho Lee, Yong Joo Doh, Hye Seong Jung, Gyu Chul Yi

Research output: Contribution to journal › Article › peer-review

28 Citations (Scopus)

Abstract

We introduce a modulation-doping method to control electrical characteristics of ZnO nanorods. Compared with a conventional homogeneous doping method, the modulation-doping method generates localized doping layers along the circumference in ZnO nanorods, useful for many device applications. Here, we investigated electrical, structural, and optical characteristics of Ga-doped ZnO nanorods with the dopant modulation layers. Electrical conductivity of ZnO nanorods was controlled by changing either dopant mole fraction or the number of modulation-doped layers. Furthermore, the modulation-doped nanorod field effect transistors exhibited precisely controlled conductance in the order of magnitude without degradation of electron mobility. The effects of the doping on structural and optical characteristics of the nanorods are also discussed.

Original language	English
Article number	223117
Journal	Applied Physics Letters
Volume	94
Issue number	22
DOIs	https://doi.org/10.1063/1.3148666
Publication status	Published - 2009
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.3148666

Cite this

@article{9e6c32f6f88d469e9aab99be27f6f23d,

title = "Modulation doping in ZnO nanorods for electrical nanodevice applications",

abstract = "We introduce a modulation-doping method to control electrical characteristics of ZnO nanorods. Compared with a conventional homogeneous doping method, the modulation-doping method generates localized doping layers along the circumference in ZnO nanorods, useful for many device applications. Here, we investigated electrical, structural, and optical characteristics of Ga-doped ZnO nanorods with the dopant modulation layers. Electrical conductivity of ZnO nanorods was controlled by changing either dopant mole fraction or the number of modulation-doped layers. Furthermore, the modulation-doped nanorod field effect transistors exhibited precisely controlled conductance in the order of magnitude without degradation of electron mobility. The effects of the doping on structural and optical characteristics of the nanorods are also discussed.",

author = "Jinkyoung Yoo and Lee, {Chul Ho} and Doh, {Yong Joo} and Jung, {Hye Seong} and Yi, {Gyu Chul}",

note = "Funding Information: This study was financially supported by the National Creative Research Initiative Project (Grant No. R16-2004-004-01001-0) of the Korea Science and Engineering Foundations (KOSEF). ",

year = "2009",

doi = "10.1063/1.3148666",

language = "English",

volume = "94",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "22",

}

TY - JOUR

T1 - Modulation doping in ZnO nanorods for electrical nanodevice applications

AU - Yoo, Jinkyoung

AU - Lee, Chul Ho

AU - Doh, Yong Joo

AU - Jung, Hye Seong

AU - Yi, Gyu Chul

N1 - Funding Information: This study was financially supported by the National Creative Research Initiative Project (Grant No. R16-2004-004-01001-0) of the Korea Science and Engineering Foundations (KOSEF).

PY - 2009

Y1 - 2009

N2 - We introduce a modulation-doping method to control electrical characteristics of ZnO nanorods. Compared with a conventional homogeneous doping method, the modulation-doping method generates localized doping layers along the circumference in ZnO nanorods, useful for many device applications. Here, we investigated electrical, structural, and optical characteristics of Ga-doped ZnO nanorods with the dopant modulation layers. Electrical conductivity of ZnO nanorods was controlled by changing either dopant mole fraction or the number of modulation-doped layers. Furthermore, the modulation-doped nanorod field effect transistors exhibited precisely controlled conductance in the order of magnitude without degradation of electron mobility. The effects of the doping on structural and optical characteristics of the nanorods are also discussed.

AB - We introduce a modulation-doping method to control electrical characteristics of ZnO nanorods. Compared with a conventional homogeneous doping method, the modulation-doping method generates localized doping layers along the circumference in ZnO nanorods, useful for many device applications. Here, we investigated electrical, structural, and optical characteristics of Ga-doped ZnO nanorods with the dopant modulation layers. Electrical conductivity of ZnO nanorods was controlled by changing either dopant mole fraction or the number of modulation-doped layers. Furthermore, the modulation-doped nanorod field effect transistors exhibited precisely controlled conductance in the order of magnitude without degradation of electron mobility. The effects of the doping on structural and optical characteristics of the nanorods are also discussed.

UR - http://www.scopus.com/inward/record.url?scp=66749135154&partnerID=8YFLogxK

U2 - 10.1063/1.3148666

DO - 10.1063/1.3148666

M3 - Article

AN - SCOPUS:66749135154

SN - 0003-6951

VL - 94

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

M1 - 223117

ER -

Modulation doping in ZnO nanorods for electrical nanodevice applications

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this