TY - JOUR
T1 - Modulation of carrier mobility of diketopyrrolopyrrole and quaterthiophene containing copolymer with self-assembled monolayers on gate dielectrics of thin film transistors
AU - Um, Hyun Ah
AU - Shin, Jicheol
AU - Lee, Tae Wan
AU - Cho, Min Ju
AU - Choi, Dong Hoon
N1 - Funding Information:
This research was supported by National Research Foundation of Korea ( NRF20110026418 and 2012R1A2A1A01008797 ) and by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education ( NRF20100020209 ).
PY - 2013
Y1 - 2013
N2 - We fabricated organic thin-film transistors (OTFTs) using diketopyrrolopyrrole (DPP) and quaterthiophene (QT) containing a conjugated polymer, poly[2,5-bis(2-octyldodecyl)pyrrolo[3,4-c]pyrrole-1,4(2H,5H)-dione-alt- 2,2′:5′,2″:5″,2â€́-quaterthiophene] (P(DPP-alt-QT)), as an active layer, with chemically modified SiO2 gate dielectrics. The effect of the surface treatment of SiO2 with alkyltrichlorosilanes on the electric characteristics of P(DPP-alt-QT) was investigated. The self-assembled monolayers (SAMs) were elaborated with n-octyltrichlorosilane (OTS) and n-octadecyltrichlorosilane (ODTS) on the SiO2 surface. After the treatment with SAM, the contact angles and surface free energy of the dielectric layers were measured to study the variation in the surface properties. Using a high-performance P(DPP-alt-QT) polymer, we fabricated thin-film transistor devices with the following dielectric layers: bare SiO2/Si, OTS-SiO2/Si, and ODTS-SiO2/Si. In the electrical measurements, typical I-V characteristics of TFTs were observed. The values of best field-effect mobility, μ, were 1.13 and 3.46 cm2 V-1 s-1 for P(DPP-alt-QT)-based TFTs containing OTS- and ODTS-treated SiO2 dielectric layers, respectively. The ODTS-treated TFT device with the lowest dielectric surface free energy exhibited the highest mobility among the three devices constructed using three different dielectric layers.
AB - We fabricated organic thin-film transistors (OTFTs) using diketopyrrolopyrrole (DPP) and quaterthiophene (QT) containing a conjugated polymer, poly[2,5-bis(2-octyldodecyl)pyrrolo[3,4-c]pyrrole-1,4(2H,5H)-dione-alt- 2,2′:5′,2″:5″,2â€́-quaterthiophene] (P(DPP-alt-QT)), as an active layer, with chemically modified SiO2 gate dielectrics. The effect of the surface treatment of SiO2 with alkyltrichlorosilanes on the electric characteristics of P(DPP-alt-QT) was investigated. The self-assembled monolayers (SAMs) were elaborated with n-octyltrichlorosilane (OTS) and n-octadecyltrichlorosilane (ODTS) on the SiO2 surface. After the treatment with SAM, the contact angles and surface free energy of the dielectric layers were measured to study the variation in the surface properties. Using a high-performance P(DPP-alt-QT) polymer, we fabricated thin-film transistor devices with the following dielectric layers: bare SiO2/Si, OTS-SiO2/Si, and ODTS-SiO2/Si. In the electrical measurements, typical I-V characteristics of TFTs were observed. The values of best field-effect mobility, μ, were 1.13 and 3.46 cm2 V-1 s-1 for P(DPP-alt-QT)-based TFTs containing OTS- and ODTS-treated SiO2 dielectric layers, respectively. The ODTS-treated TFT device with the lowest dielectric surface free energy exhibited the highest mobility among the three devices constructed using three different dielectric layers.
KW - Diketopyrrolopyrrole
KW - Hole mobility
KW - Organic semiconductor
KW - Quaterthiophene
KW - Self-assembled monolayer
KW - Thin-film transistor
UR - http://www.scopus.com/inward/record.url?scp=84887044984&partnerID=8YFLogxK
U2 - 10.1016/j.synthmet.2013.09.020
DO - 10.1016/j.synthmet.2013.09.020
M3 - Article
AN - SCOPUS:84887044984
SN - 0379-6779
VL - 184
SP - 61
EP - 67
JO - Synthetic Metals
JF - Synthetic Metals
ER -