Modulation of lattice strain in ZnO thin films by ion implantation

Present work reports the modulation of lattice stress in ZnO thin films implanted using Ar, Mn and Ag ions. The ZnO thin films were fabricated using RF magnetron sputtering and the thickness of films was almost 150 nm. Scanning electron micrographs show that the granular nature of these films were remained for implanted ions, and morphological changes were observed. Crystalline phase of each films remained unchanged at various doses of these ions. However, disorder is observed with the dose. The lattice stress increased as the increases of ion implantation amount. It was difficult to explain the lattice strain with the ion radius of the injected ions, but it was found that it had a certain relationship with the total energy loss governed by both electronic and nuclear stopping process.