Molecular beam epitaxial growth of In_0.65Ga_0.35 As quantum wells on GaAs substrates for 1.5 μm exciton resonance

Keyphrases

• Multiple Quantum Wells 100%
• GaAs Substrate 100%
• Molecular Beam Epitaxy 100%
• Quantum Well 100%
• InGaAs 100%
• Exciton Resonance 100%
• Room Temperature 66%
• Buffer Layer 66%
• Transmission Electron Microscopy 33%
• Exciton 33%
• Gallium Arsenide 33%
• Optical Absorption 33%
• Growth Temperature 33%
• X-ray Diffractometry 33%
• Absorption Measurement 33%
• Optical Devices 33%
• Layer Growth 33%
• Extremely Low Temperature 33%
• Growth Interruption 33%
• InGaAs Buffer 33%
• Linearly Graded 33%
• Multiple Quantum Well Structure 33%
• Large Lattice Mismatch 33%

Physics

• Exciton 100%
• Quantum Wells 100%
• Multiple Quantum Well 100%
• Molecular Beam 100%
• Room Temperature 50%
• Transmission Electron Microscopy 25%
• Optical Device 25%
• Electromagnetic Absorption 25%
• Lattice Mismatch 25%
• X-Ray Diffraction 25%
• Molecular Beam Epitaxy 25%