Molecular beam epitaxy of gallium nitride by electron cyclotron resonance plasma and hydrogen azide

D. B. Oberman; H. Lee; W. K. Götz; J. S. Harris

doi:10.1016/0022-0248(95)80072-K

Molecular beam epitaxy of gallium nitride by electron cyclotron resonance plasma and hydrogen azide

D. B. Oberman^*
, H. Lee
, W. K. Götz
, J. S. Harris

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

GaN films were grown on (0001) sapphire by molecular beam epitaxy (MBE). Two sources of activated nitrogen were investigated: an electron cyclotron resonance (ECR) plasma, and hydrogen azide (HN₃). With the ECR plasma source, typical growth rates were ∼ 0.1 μm/h. Films grown in this manner showed significant surface damage from ions, and little if any photoluminescence. With HN₃, growth rates were ∼ 0.25 μm/h. Azide-grown films showed smooth surfaces, and sharp band-to-band photoluminescence. This is the first reported use of HN₃ to grow III–V nitrides by MBE, and it shows great promise as a nitrogen source.

Original language	English
Pages (from-to)	912-915
Number of pages	4
Journal	Journal of Crystal Growth
Volume	150
DOIs	https://doi.org/10.1016/0022-0248(95)80072-K
Publication status	Published - 1995
Externally published	Yes

Bibliographical note

Funding Information:
This work was supportedb y ONR/ARPA un der contractN o. N00014-93-1-137a5n dby CNOM under contractN o. N00014-92-J-1903.

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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@article{7827aafc309e4ad8beb6ac195f663941,

title = "Molecular beam epitaxy of gallium nitride by electron cyclotron resonance plasma and hydrogen azide",

abstract = "GaN films were grown on (0001) sapphire by molecular beam epitaxy (MBE). Two sources of activated nitrogen were investigated: an electron cyclotron resonance (ECR) plasma, and hydrogen azide (HN3). With the ECR plasma source, typical growth rates were ∼ 0.1 μm/h. Films grown in this manner showed significant surface damage from ions, and little if any photoluminescence. With HN3, growth rates were ∼ 0.25 μm/h. Azide-grown films showed smooth surfaces, and sharp band-to-band photoluminescence. This is the first reported use of HN3 to grow III–V nitrides by MBE, and it shows great promise as a nitrogen source.",

author = "Oberman, \{D. B.\} and H. Lee and G{\"o}tz, \{W. K.\} and Harris, \{J. S.\}",

note = "Funding Information: This work was supportedb y ONR/ARPA un der contractN o. N00014-93-1-137a5n dby CNOM under contractN o. N00014-92-J-1903.",

year = "1995",

doi = "10.1016/0022-0248(95)80072-K",

language = "English",

volume = "150",

pages = "912--915",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Molecular beam epitaxy of gallium nitride by electron cyclotron resonance plasma and hydrogen azide

AU - Oberman, D. B.

AU - Lee, H.

AU - Götz, W. K.

AU - Harris, J. S.

N1 - Funding Information: This work was supportedb y ONR/ARPA un der contractN o. N00014-93-1-137a5n dby CNOM under contractN o. N00014-92-J-1903.

PY - 1995

Y1 - 1995

N2 - GaN films were grown on (0001) sapphire by molecular beam epitaxy (MBE). Two sources of activated nitrogen were investigated: an electron cyclotron resonance (ECR) plasma, and hydrogen azide (HN3). With the ECR plasma source, typical growth rates were ∼ 0.1 μm/h. Films grown in this manner showed significant surface damage from ions, and little if any photoluminescence. With HN3, growth rates were ∼ 0.25 μm/h. Azide-grown films showed smooth surfaces, and sharp band-to-band photoluminescence. This is the first reported use of HN3 to grow III–V nitrides by MBE, and it shows great promise as a nitrogen source.

AB - GaN films were grown on (0001) sapphire by molecular beam epitaxy (MBE). Two sources of activated nitrogen were investigated: an electron cyclotron resonance (ECR) plasma, and hydrogen azide (HN3). With the ECR plasma source, typical growth rates were ∼ 0.1 μm/h. Films grown in this manner showed significant surface damage from ions, and little if any photoluminescence. With HN3, growth rates were ∼ 0.25 μm/h. Azide-grown films showed smooth surfaces, and sharp band-to-band photoluminescence. This is the first reported use of HN3 to grow III–V nitrides by MBE, and it shows great promise as a nitrogen source.

UR - https://www.scopus.com/pages/publications/0029307274

U2 - 10.1016/0022-0248(95)80072-K

DO - 10.1016/0022-0248(95)80072-K

M3 - Article

AN - SCOPUS:0029307274

SN - 0022-0248

VL - 150

SP - 912

EP - 915

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -

Molecular beam epitaxy of gallium nitride by electron cyclotron resonance plasma and hydrogen azide

Abstract

Bibliographical note

ASJC Scopus subject areas

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