@inproceedings{0f92e5156f594a18be42f9efdbaaf36b,
title = "Monolithic GaAs PHEMT MMICs integrated with RF MEMS switches",
abstract = "Low-loss RF MEMS switches have been integrated with HEMT MMIC circuits on GaAs substrates to allow the fabrication of a new class of high-performance microwave and millimeter-wave circuits. The integration process allows the co-integration of MEMS microrelays and GaAs PHEMT devices with no sacrifice in performance or yield to either device. Examples of circuits fabricated include multi-band low-noise amplifiers, transmit and receive (T/R) circuits, and a switched dual-width power amplifier at X-band. The power amplifier uses two MEMS switches at the input to guide the RF signal between two paths. Each path provides single-stage amplification using different size HEMT devices to optimize efficiency over a wide range of output power levels.",
keywords = "Amplifier, HEMT, MEMS switch, MMIC",
author = "Hacker, {J. B.} and M. Kim and Mihailovich, {R. E.} and DeNatale, {J. F.}",
year = "2004",
doi = "10.1109/CSICS.2004.1392546",
language = "English",
isbn = "0780386167",
series = "Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC",
pages = "229--232",
booktitle = "IEEE Compound Semiconductor Integrated Circuit Symposium; 2004 IEEE CSIC Symposium, 26th Anniversary",
note = "IEEE Compound Semiconductor Integrated Circuit Symposium; 2004 IEEE CSIC Symposium ; Conference date: 24-10-2004 Through 27-10-2004",
}