Monolithic integration of sub-volt memristor-driven pixels for capacitorless active-matrix micro-LED displays

Ho Jin Lee; Seok Hee Hong; Kyung Rock Son; Sim Hun Yuk; Sung Keun Choi; Tukaram D. Dongale; Tae Geun Kim

doi:10.1088/2631-7990/ae1a22

Monolithic integration of sub-volt memristor-driven pixels for capacitorless active-matrix micro-LED displays

Ho Jin Lee
, Seok Hee Hong
, Kyung Rock Son
, Sim Hun Yuk
, Sung Keun Choi
, Tukaram D. Dongale
, Tae Geun Kim^*

^*Corresponding author for this work

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Highlights A capacitorless AM micro-LED display was demonstrated using monolithically integrated germanium telluride memristors. The driving TFT and storage capacitor were replaced by a single multilevel, low-voltage GeTe memristor device. Stable sub-0.2 V SET/RESET switching was achieved with excellent endurance and long data retention. Alphabet characters were displayed on a 12 × 12 micro-LED array via memristor-based AM driving. Ultra-low-power operation was validated using pulse-width modulation without requiring refresh circuitry.

Original language	English
Article number	025501
Journal	International Journal of Extreme Manufacturing
Volume	8
Issue number	2
DOIs	https://doi.org/10.1088/2631-7990/ae1a22
Publication status	Published - 2026 Apr 1

Bibliographical note

Publisher Copyright:
© 2025 The Author(s). Published by IOP Publishing Ltd on behalf of the IMMT.

Keywords

active-matrix display
capacitorless
high-resolution
low-power consumption
memristor
micro light-emitting diodes
monolithic integration

ASJC Scopus subject areas

Industrial and Manufacturing Engineering

Access to Document

10.1088/2631-7990/ae1a22

Cite this

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title = "Monolithic integration of sub-volt memristor-driven pixels for capacitorless active-matrix micro-LED displays",

abstract = "Highlights A capacitorless AM micro-LED display was demonstrated using monolithically integrated germanium telluride memristors. The driving TFT and storage capacitor were replaced by a single multilevel, low-voltage GeTe memristor device. Stable sub-0.2 V SET/RESET switching was achieved with excellent endurance and long data retention. Alphabet characters were displayed on a 12 × 12 micro-LED array via memristor-based AM driving. Ultra-low-power operation was validated using pulse-width modulation without requiring refresh circuitry.",

keywords = "active-matrix display, capacitorless, high-resolution, low-power consumption, memristor, micro light-emitting diodes, monolithic integration",

author = "Lee, \{Ho Jin\} and Hong, \{Seok Hee\} and Son, \{Kyung Rock\} and Yuk, \{Sim Hun\} and Choi, \{Sung Keun\} and Dongale, \{Tukaram D.\} and Kim, \{Tae Geun\}",

note = "Publisher Copyright: {\textcopyright} 2025 The Author(s). Published by IOP Publishing Ltd on behalf of the IMMT.",

year = "2026",

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doi = "10.1088/2631-7990/ae1a22",

language = "English",

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journal = "International Journal of Extreme Manufacturing",

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T1 - Monolithic integration of sub-volt memristor-driven pixels for capacitorless active-matrix micro-LED displays

AU - Lee, Ho Jin

AU - Hong, Seok Hee

AU - Son, Kyung Rock

AU - Yuk, Sim Hun

AU - Choi, Sung Keun

AU - Dongale, Tukaram D.

AU - Kim, Tae Geun

PY - 2026/4/1

Y1 - 2026/4/1

N2 - Highlights A capacitorless AM micro-LED display was demonstrated using monolithically integrated germanium telluride memristors. The driving TFT and storage capacitor were replaced by a single multilevel, low-voltage GeTe memristor device. Stable sub-0.2 V SET/RESET switching was achieved with excellent endurance and long data retention. Alphabet characters were displayed on a 12 × 12 micro-LED array via memristor-based AM driving. Ultra-low-power operation was validated using pulse-width modulation without requiring refresh circuitry.

AB - Highlights A capacitorless AM micro-LED display was demonstrated using monolithically integrated germanium telluride memristors. The driving TFT and storage capacitor were replaced by a single multilevel, low-voltage GeTe memristor device. Stable sub-0.2 V SET/RESET switching was achieved with excellent endurance and long data retention. Alphabet characters were displayed on a 12 × 12 micro-LED array via memristor-based AM driving. Ultra-low-power operation was validated using pulse-width modulation without requiring refresh circuitry.

KW - active-matrix display

KW - capacitorless

KW - high-resolution

KW - low-power consumption

KW - memristor

KW - micro light-emitting diodes

KW - monolithic integration

UR - https://www.scopus.com/pages/publications/105022509517

U2 - 10.1088/2631-7990/ae1a22

DO - 10.1088/2631-7990/ae1a22

M3 - Article

AN - SCOPUS:105022509517

SN - 2631-8644

VL - 8

JO - International Journal of Extreme Manufacturing

JF - International Journal of Extreme Manufacturing

IS - 2

M1 - 025501

ER -

Monolithic integration of sub-volt memristor-driven pixels for capacitorless active-matrix micro-LED displays

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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