Monolithic Interface Contact Engineering to Boost Optoelectronic Performances of 2D Semiconductor Photovoltaic Heterojunctions

Seunghoon Yang; Janghwan Cha; Jong Chan Kim; Donghun Lee; Woong Huh; Yoonseok Kim; Seong Won Lee; Hong Gyu Park; Hu Young Jeong; Suklyun Hong; Gwan Hyoung Lee; Chul Ho Lee

doi:10.1021/acs.nanolett.9b05162

Monolithic Interface Contact Engineering to Boost Optoelectronic Performances of 2D Semiconductor Photovoltaic Heterojunctions

Seunghoon Yang, Janghwan Cha, Jong Chan Kim, Donghun Lee, Woong Huh, Yoonseok Kim, Seong Won Lee, Hong Gyu Park, Hu Young Jeong, Suklyun Hong, Gwan Hyoung Lee, Chul Ho Lee

Research output: Contribution to journal › Article › peer-review

30 Citations (Scopus)

Abstract

In optoelectronic devices based on two-dimensional (2D) semiconductor heterojunctions, the efficient charge transport of photogenerated carriers across the interface is a critical factor to determine the device performances. Here, we report an unexplored approach to boost the optoelectronic device performances of the WSe₂-MoS₂ p-n heterojunctions via the monolithic-oxidation-induced doping and resultant modulation of the interface band alignment. In the proposed device, the atomically thin WO_x layer, which is directly formed by layer-by-layer oxidation of WSe₂, is used as a charge transport layer for promoting hole extraction. The use of the ultrathin oxide layer significantly enhanced the photoresponsivity of the WSe₂-MoS₂ p-n junction devices, and the power conversion efficiency increased from 0.7 to 5.0%, maintaining the response time. The enhanced characteristics can be understood by the formation of the low Schottky barrier and favorable interface band alignment, as confirmed by band alignment analyses and first-principle calculations. Our work suggests a new route to achieve interface contact engineering in the heterostructures toward realizing high-performance 2D optoelectronics.

Original language	English
Pages (from-to)	2443-2451
Number of pages	9
Journal	Nano Letters
Volume	20
Issue number	4
DOIs	https://doi.org/10.1021/acs.nanolett.9b05162
Publication status	Published - 2020 Apr 8

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation (NRF) of Korea (2017R1A5A1014862 (SRC Program: vdWMRC Center) 2017R1D1A1B03035441, and 2018M3D1A1058793), the Korea Institute of Energy Technology Evaluation and Planning (KETEP) and the Ministry of Trade, Industry & Energy (MOTIE) of the Republic of Korea (No. 20173010013340), the Korea University Grant and the KU-KIST School Project. S.H. acknowledges support from the NRF of Korea (2018K1A4A3A01064272 (GRDC Program), 2017R1A2B2010123, 2010-0020207 (Priority Research Center Program)). H.Y.J. acknowledges support from the NRF of Korea (2018R1A2B6008104). H.-G.P. acknowledges support from the NRF grant funded by the Korean government (MSIT) (2018R1A3A3000666). G.-H.L. acknowledges support from the Creative-Pioneering Researchers Program through Seoul National University (SNU).

Funding Information:
This work was supported by the National Research Foundation (NRF) of Korea (2017R1A5A1014862 (SRC Program: vdWMRC Center), 2017R1D1A1B03035441, and 2018M3D1A1058793), the Korea Institute of Energy Technology Evaluation and Planning (KETEP) and the Ministry of Trade, Industry & Energy (MOTIE) of the Republic of Korea (No. 20173010013340), the Korea University Grant and the KU-KIST School Project. S.H. acknowledges support from the NRF of Korea (2018K1A4A3A01064272 (GRDC Program), 2017R1A2B2010123, 2010-0020207 (Priority Research Center Program)). H.Y.J. acknowledges support from the NRF of Korea (2018R1A2B6008104). H.-G.P. acknowledges support from the NRF grant funded by the Korean government (MSIT) (2018R1A3A3000666). G.-H.L. acknowledges support from the Creative-Pioneering Researchers Program through Seoul National University (SNU).

Publisher Copyright:
© 2020 American Chemical Society.

Keywords

2D semiconductors
contact engineering
heterostructures
optoelectronics
photovoltaics
transition metal dichalcogenides

ASJC Scopus subject areas

Bioengineering
Chemistry(all)
Materials Science(all)
Condensed Matter Physics
Mechanical Engineering

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1021/acs.nanolett.9b05162

Cite this

@article{e3ba23b1b119413391104a844fb79bef,

title = "Monolithic Interface Contact Engineering to Boost Optoelectronic Performances of 2D Semiconductor Photovoltaic Heterojunctions",

abstract = "In optoelectronic devices based on two-dimensional (2D) semiconductor heterojunctions, the efficient charge transport of photogenerated carriers across the interface is a critical factor to determine the device performances. Here, we report an unexplored approach to boost the optoelectronic device performances of the WSe2-MoS2 p-n heterojunctions via the monolithic-oxidation-induced doping and resultant modulation of the interface band alignment. In the proposed device, the atomically thin WOx layer, which is directly formed by layer-by-layer oxidation of WSe2, is used as a charge transport layer for promoting hole extraction. The use of the ultrathin oxide layer significantly enhanced the photoresponsivity of the WSe2-MoS2 p-n junction devices, and the power conversion efficiency increased from 0.7 to 5.0%, maintaining the response time. The enhanced characteristics can be understood by the formation of the low Schottky barrier and favorable interface band alignment, as confirmed by band alignment analyses and first-principle calculations. Our work suggests a new route to achieve interface contact engineering in the heterostructures toward realizing high-performance 2D optoelectronics.",

keywords = "2D semiconductors, contact engineering, heterostructures, optoelectronics, photovoltaics, transition metal dichalcogenides",

author = "Seunghoon Yang and Janghwan Cha and Kim, {Jong Chan} and Donghun Lee and Woong Huh and Yoonseok Kim and Lee, {Seong Won} and Park, {Hong Gyu} and Jeong, {Hu Young} and Suklyun Hong and Lee, {Gwan Hyoung} and Lee, {Chul Ho}",

note = "Funding Information: This work was supported by the National Research Foundation (NRF) of Korea (2017R1A5A1014862 (SRC Program: vdWMRC Center) 2017R1D1A1B03035441, and 2018M3D1A1058793), the Korea Institute of Energy Technology Evaluation and Planning (KETEP) and the Ministry of Trade, Industry & Energy (MOTIE) of the Republic of Korea (No. 20173010013340), the Korea University Grant and the KU-KIST School Project. S.H. acknowledges support from the NRF of Korea (2018K1A4A3A01064272 (GRDC Program), 2017R1A2B2010123, 2010-0020207 (Priority Research Center Program)). H.Y.J. acknowledges support from the NRF of Korea (2018R1A2B6008104). H.-G.P. acknowledges support from the NRF grant funded by the Korean government (MSIT) (2018R1A3A3000666). G.-H.L. acknowledges support from the Creative-Pioneering Researchers Program through Seoul National University (SNU). Funding Information: This work was supported by the National Research Foundation (NRF) of Korea (2017R1A5A1014862 (SRC Program: vdWMRC Center), 2017R1D1A1B03035441, and 2018M3D1A1058793), the Korea Institute of Energy Technology Evaluation and Planning (KETEP) and the Ministry of Trade, Industry & Energy (MOTIE) of the Republic of Korea (No. 20173010013340), the Korea University Grant and the KU-KIST School Project. S.H. acknowledges support from the NRF of Korea (2018K1A4A3A01064272 (GRDC Program), 2017R1A2B2010123, 2010-0020207 (Priority Research Center Program)). H.Y.J. acknowledges support from the NRF of Korea (2018R1A2B6008104). H.-G.P. acknowledges support from the NRF grant funded by the Korean government (MSIT) (2018R1A3A3000666). G.-H.L. acknowledges support from the Creative-Pioneering Researchers Program through Seoul National University (SNU). Publisher Copyright: {\textcopyright} 2020 American Chemical Society.",

year = "2020",

month = apr,

day = "8",

doi = "10.1021/acs.nanolett.9b05162",

language = "English",

volume = "20",

pages = "2443--2451",

journal = "Nano Letters",

issn = "1530-6984",

publisher = "American Chemical Society",

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TY - JOUR

T1 - Monolithic Interface Contact Engineering to Boost Optoelectronic Performances of 2D Semiconductor Photovoltaic Heterojunctions

AU - Yang, Seunghoon

AU - Cha, Janghwan

AU - Kim, Jong Chan

AU - Lee, Donghun

AU - Huh, Woong

AU - Kim, Yoonseok

AU - Lee, Seong Won

AU - Park, Hong Gyu

AU - Jeong, Hu Young

AU - Hong, Suklyun

AU - Lee, Gwan Hyoung

AU - Lee, Chul Ho

N1 - Funding Information: This work was supported by the National Research Foundation (NRF) of Korea (2017R1A5A1014862 (SRC Program: vdWMRC Center) 2017R1D1A1B03035441, and 2018M3D1A1058793), the Korea Institute of Energy Technology Evaluation and Planning (KETEP) and the Ministry of Trade, Industry & Energy (MOTIE) of the Republic of Korea (No. 20173010013340), the Korea University Grant and the KU-KIST School Project. S.H. acknowledges support from the NRF of Korea (2018K1A4A3A01064272 (GRDC Program), 2017R1A2B2010123, 2010-0020207 (Priority Research Center Program)). H.Y.J. acknowledges support from the NRF of Korea (2018R1A2B6008104). H.-G.P. acknowledges support from the NRF grant funded by the Korean government (MSIT) (2018R1A3A3000666). G.-H.L. acknowledges support from the Creative-Pioneering Researchers Program through Seoul National University (SNU). Funding Information: This work was supported by the National Research Foundation (NRF) of Korea (2017R1A5A1014862 (SRC Program: vdWMRC Center), 2017R1D1A1B03035441, and 2018M3D1A1058793), the Korea Institute of Energy Technology Evaluation and Planning (KETEP) and the Ministry of Trade, Industry & Energy (MOTIE) of the Republic of Korea (No. 20173010013340), the Korea University Grant and the KU-KIST School Project. S.H. acknowledges support from the NRF of Korea (2018K1A4A3A01064272 (GRDC Program), 2017R1A2B2010123, 2010-0020207 (Priority Research Center Program)). H.Y.J. acknowledges support from the NRF of Korea (2018R1A2B6008104). H.-G.P. acknowledges support from the NRF grant funded by the Korean government (MSIT) (2018R1A3A3000666). G.-H.L. acknowledges support from the Creative-Pioneering Researchers Program through Seoul National University (SNU). Publisher Copyright: © 2020 American Chemical Society.

PY - 2020/4/8

Y1 - 2020/4/8

N2 - In optoelectronic devices based on two-dimensional (2D) semiconductor heterojunctions, the efficient charge transport of photogenerated carriers across the interface is a critical factor to determine the device performances. Here, we report an unexplored approach to boost the optoelectronic device performances of the WSe2-MoS2 p-n heterojunctions via the monolithic-oxidation-induced doping and resultant modulation of the interface band alignment. In the proposed device, the atomically thin WOx layer, which is directly formed by layer-by-layer oxidation of WSe2, is used as a charge transport layer for promoting hole extraction. The use of the ultrathin oxide layer significantly enhanced the photoresponsivity of the WSe2-MoS2 p-n junction devices, and the power conversion efficiency increased from 0.7 to 5.0%, maintaining the response time. The enhanced characteristics can be understood by the formation of the low Schottky barrier and favorable interface band alignment, as confirmed by band alignment analyses and first-principle calculations. Our work suggests a new route to achieve interface contact engineering in the heterostructures toward realizing high-performance 2D optoelectronics.

AB - In optoelectronic devices based on two-dimensional (2D) semiconductor heterojunctions, the efficient charge transport of photogenerated carriers across the interface is a critical factor to determine the device performances. Here, we report an unexplored approach to boost the optoelectronic device performances of the WSe2-MoS2 p-n heterojunctions via the monolithic-oxidation-induced doping and resultant modulation of the interface band alignment. In the proposed device, the atomically thin WOx layer, which is directly formed by layer-by-layer oxidation of WSe2, is used as a charge transport layer for promoting hole extraction. The use of the ultrathin oxide layer significantly enhanced the photoresponsivity of the WSe2-MoS2 p-n junction devices, and the power conversion efficiency increased from 0.7 to 5.0%, maintaining the response time. The enhanced characteristics can be understood by the formation of the low Schottky barrier and favorable interface band alignment, as confirmed by band alignment analyses and first-principle calculations. Our work suggests a new route to achieve interface contact engineering in the heterostructures toward realizing high-performance 2D optoelectronics.

KW - 2D semiconductors

KW - contact engineering

KW - heterostructures

KW - optoelectronics

KW - photovoltaics

KW - transition metal dichalcogenides

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DO - 10.1021/acs.nanolett.9b05162

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AN - SCOPUS:85083003512

SN - 1530-6984

VL - 20

SP - 2443

EP - 2451

JO - Nano Letters

JF - Nano Letters

IS - 4

ER -

Monolithic Interface Contact Engineering to Boost Optoelectronic Performances of 2D Semiconductor Photovoltaic Heterojunctions

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

UN SDGs

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