Abstract
Monolithic perovskite-silicon tandem solar cells using MoOx hole selective contact silicon cell as bottom structure shows a power conversion efficiency of 5.7%. A thin (15nm in thickness) MoOx contact to n-type Si was used instead of a standard p+ emitter to collect holes and the SiOx/n+ poly-Si structure was applied on the rear of the device for direct tunneling of electrons and blocking holes. With this bottom silicon structure, 14% of devices were manufactured. With this bottom carrier selective silicon cell, tin oxide, and subsequent perovskite structure were deposited to fabricate monolithic tandem solar cells. Monolithic tandem structure without ITO interlayer was also compared to confirm the role of MoOx in tandem cells and this tandem structure shows the power conversion efficiency of 4%. Through this experiment, we have confirmed that the MoOx layer play roles as a passivation layer, hole collecting material, and recombination layer at the same time in the tandem structure.
Original language | English |
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Title of host publication | 2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 2177-2179 |
Number of pages | 3 |
ISBN (Electronic) | 9781665419222 |
DOIs | |
Publication status | Published - 2021 Jun 20 |
Event | 48th IEEE Photovoltaic Specialists Conference, PVSC 2021 - Fort Lauderdale, United States Duration: 2021 Jun 20 → 2021 Jun 25 |
Publication series
Name | Conference Record of the IEEE Photovoltaic Specialists Conference |
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ISSN (Print) | 0160-8371 |
Conference
Conference | 48th IEEE Photovoltaic Specialists Conference, PVSC 2021 |
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Country/Territory | United States |
City | Fort Lauderdale |
Period | 21/6/20 → 21/6/25 |
Bibliographical note
Publisher Copyright:© 2021 IEEE.
Keywords
- Perovskite-silicon tandem solar cell
- carrier-selective contact cell
- molybdenum hole selective contact
ASJC Scopus subject areas
- Control and Systems Engineering
- Industrial and Manufacturing Engineering
- Electrical and Electronic Engineering