Monolithically integrated dual-band quantum well infrared photodetector

D. K. Sengupta; S. D. Gunapala; S. V. Bandara; F. Pool; J. K. Liu; M. McKelvey; E. Luong; J. Torezan; J. Mumulo; W. Hong; J. Gill; G. E. Stillman; A. P. Curtis; S. Kim; L. J. Chou; al et al

doi:10.1557/proc-484-205

Monolithically integrated dual-band quantum well infrared photodetector

D. K. Sengupta, S. D. Gunapala, S. V. Bandara, F. Pool, J. K. Liu, M. McKelvey, E. Luong, J. Torezan, J. Mumulo, W. Hong, J. Gill, G. E. Stillman, A. P. Curtis, S. Kim, L. J. Chou, al et al

Research output: Contribution to journal › Conference article › peer-review

Abstract

A monolithic quantum well infrared photodetector (QWIP) structure has been presented that is suitable for dual bands in the two atmospheric transmission windows of 3-5.3μm and 7.5-14μm, respectively. The proposed structure employs dual stacked, strain InGaAs/AlGaAs and lattice-matched GaAs/AlGaAs quantum well infrared photodetector for mid wavelength and long wavelength detection. The response peak of the strain InGaAs/AlGaAs quantum well is at 4.9 μm and the lattice-matched GaAs/AlGaAs is at 10.5μm; their peak sensitivities are in the spectral regions of 3-5.3μm and 7.5-14μm. The peak responsivity when the dual-band QWIP is biased at 5 Volts is approx. 0.065A/W at 4.9μm and approx. 0.006A/W at 10.5μm; at this voltage the dual-band QWIP is more sensitive at the shorter wavelengths due to its larger impedance thus exhibiting wavelength tunability characteristics with bias. Additionally, single colored 4.9 and 10.5μm QWIPs were fabricated from the dual-band QWIP structure to study the bias-dependent behavior and also to understand the effects of growing the strain layer InGaAs/AlGaAs QWIP on top of the lattice-matched GaAs/AlGaAs QWIP. In summary, two stack dual-band QWIPs using GaAs/AlGaAs and strained InGaAs/AlGaAs multiquantum wells have been demonstrated with peak spectral sensitivities in the spectral region of 3-5.3μm and 7.5-14μm. Also, the voltage tunable dual-band detection have been realized for this kind of QWIP structure.

Original language	English
Pages (from-to)	205-214
Number of pages	10
Journal	Materials Research Society Symposium - Proceedings
Volume	484
DOIs	https://doi.org/10.1557/proc-484-205
Publication status	Published - 1997
Externally published	Yes
Event	Proceedings of the 1997 MRS Fall Symposium - Boston, MA, USA Duration: 1997 Dec 2 → 1997 Dec 4

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1557/proc-484-205

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Sengupta, D. K., Gunapala, S. D., Bandara, S. V., Pool, F., Liu, J. K., McKelvey, M., Luong, E., Torezan, J., Mumulo, J., Hong, W., Gill, J., Stillman, G. E., Curtis, A. P., Kim, S., Chou, L. J., & et al, A. (1997). Monolithically integrated dual-band quantum well infrared photodetector. Materials Research Society Symposium - Proceedings, 484, 205-214. https://doi.org/10.1557/proc-484-205

@article{2e66669344e447a0b7c571c82981245e,

title = "Monolithically integrated dual-band quantum well infrared photodetector",

abstract = "A monolithic quantum well infrared photodetector (QWIP) structure has been presented that is suitable for dual bands in the two atmospheric transmission windows of 3-5.3μm and 7.5-14μm, respectively. The proposed structure employs dual stacked, strain InGaAs/AlGaAs and lattice-matched GaAs/AlGaAs quantum well infrared photodetector for mid wavelength and long wavelength detection. The response peak of the strain InGaAs/AlGaAs quantum well is at 4.9 μm and the lattice-matched GaAs/AlGaAs is at 10.5μm; their peak sensitivities are in the spectral regions of 3-5.3μm and 7.5-14μm. The peak responsivity when the dual-band QWIP is biased at 5 Volts is approx. 0.065A/W at 4.9μm and approx. 0.006A/W at 10.5μm; at this voltage the dual-band QWIP is more sensitive at the shorter wavelengths due to its larger impedance thus exhibiting wavelength tunability characteristics with bias. Additionally, single colored 4.9 and 10.5μm QWIPs were fabricated from the dual-band QWIP structure to study the bias-dependent behavior and also to understand the effects of growing the strain layer InGaAs/AlGaAs QWIP on top of the lattice-matched GaAs/AlGaAs QWIP. In summary, two stack dual-band QWIPs using GaAs/AlGaAs and strained InGaAs/AlGaAs multiquantum wells have been demonstrated with peak spectral sensitivities in the spectral region of 3-5.3μm and 7.5-14μm. Also, the voltage tunable dual-band detection have been realized for this kind of QWIP structure.",

author = "Sengupta, {D. K.} and Gunapala, {S. D.} and Bandara, {S. V.} and F. Pool and Liu, {J. K.} and M. McKelvey and E. Luong and J. Torezan and J. Mumulo and W. Hong and J. Gill and Stillman, {G. E.} and Curtis, {A. P.} and S. Kim and Chou, {L. J.} and {et al}, al",

year = "1997",

doi = "10.1557/proc-484-205",

language = "English",

volume = "484",

pages = "205--214",

journal = "Materials Research Society Symposium Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1997 MRS Fall Symposium ; Conference date: 02-12-1997 Through 04-12-1997",

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TY - JOUR

T1 - Monolithically integrated dual-band quantum well infrared photodetector

AU - Sengupta, D. K.

AU - Gunapala, S. D.

AU - Bandara, S. V.

AU - Pool, F.

AU - Liu, J. K.

AU - McKelvey, M.

AU - Luong, E.

AU - Torezan, J.

AU - Mumulo, J.

AU - Hong, W.

AU - Gill, J.

AU - Stillman, G. E.

AU - Curtis, A. P.

AU - Kim, S.

AU - Chou, L. J.

AU - et al, al

PY - 1997

Y1 - 1997

N2 - A monolithic quantum well infrared photodetector (QWIP) structure has been presented that is suitable for dual bands in the two atmospheric transmission windows of 3-5.3μm and 7.5-14μm, respectively. The proposed structure employs dual stacked, strain InGaAs/AlGaAs and lattice-matched GaAs/AlGaAs quantum well infrared photodetector for mid wavelength and long wavelength detection. The response peak of the strain InGaAs/AlGaAs quantum well is at 4.9 μm and the lattice-matched GaAs/AlGaAs is at 10.5μm; their peak sensitivities are in the spectral regions of 3-5.3μm and 7.5-14μm. The peak responsivity when the dual-band QWIP is biased at 5 Volts is approx. 0.065A/W at 4.9μm and approx. 0.006A/W at 10.5μm; at this voltage the dual-band QWIP is more sensitive at the shorter wavelengths due to its larger impedance thus exhibiting wavelength tunability characteristics with bias. Additionally, single colored 4.9 and 10.5μm QWIPs were fabricated from the dual-band QWIP structure to study the bias-dependent behavior and also to understand the effects of growing the strain layer InGaAs/AlGaAs QWIP on top of the lattice-matched GaAs/AlGaAs QWIP. In summary, two stack dual-band QWIPs using GaAs/AlGaAs and strained InGaAs/AlGaAs multiquantum wells have been demonstrated with peak spectral sensitivities in the spectral region of 3-5.3μm and 7.5-14μm. Also, the voltage tunable dual-band detection have been realized for this kind of QWIP structure.

AB - A monolithic quantum well infrared photodetector (QWIP) structure has been presented that is suitable for dual bands in the two atmospheric transmission windows of 3-5.3μm and 7.5-14μm, respectively. The proposed structure employs dual stacked, strain InGaAs/AlGaAs and lattice-matched GaAs/AlGaAs quantum well infrared photodetector for mid wavelength and long wavelength detection. The response peak of the strain InGaAs/AlGaAs quantum well is at 4.9 μm and the lattice-matched GaAs/AlGaAs is at 10.5μm; their peak sensitivities are in the spectral regions of 3-5.3μm and 7.5-14μm. The peak responsivity when the dual-band QWIP is biased at 5 Volts is approx. 0.065A/W at 4.9μm and approx. 0.006A/W at 10.5μm; at this voltage the dual-band QWIP is more sensitive at the shorter wavelengths due to its larger impedance thus exhibiting wavelength tunability characteristics with bias. Additionally, single colored 4.9 and 10.5μm QWIPs were fabricated from the dual-band QWIP structure to study the bias-dependent behavior and also to understand the effects of growing the strain layer InGaAs/AlGaAs QWIP on top of the lattice-matched GaAs/AlGaAs QWIP. In summary, two stack dual-band QWIPs using GaAs/AlGaAs and strained InGaAs/AlGaAs multiquantum wells have been demonstrated with peak spectral sensitivities in the spectral region of 3-5.3μm and 7.5-14μm. Also, the voltage tunable dual-band detection have been realized for this kind of QWIP structure.

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U2 - 10.1557/proc-484-205

DO - 10.1557/proc-484-205

M3 - Conference article

AN - SCOPUS:0031349213

SN - 0272-9172

VL - 484

SP - 205

EP - 214

JO - Materials Research Society Symposium Proceedings

JF - Materials Research Society Symposium Proceedings

T2 - Proceedings of the 1997 MRS Fall Symposium

Y2 - 2 December 1997 through 4 December 1997

ER -

Monolithically integrated dual-band quantum well infrared photodetector

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