Monolithically integrated SiGe-Si PIN-HBT front-end photoreceivers

J. S. Rieh; D. Klotzkin; O. Qasaimeh; L. H. Lu; K. Yang; L. P.B. Katehi; P. Bhattacharya; E. T. Croke

doi:10.1109/68.661428

Monolithically integrated SiGe-Si PIN-HBT front-end photoreceivers

J. S. Rieh, D. Klotzkin, O. Qasaimeh, L. H. Lu, K. Yang, L. P.B. Katehi, P. Bhattacharya, E. T. Croke

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

Fabrication and characterization of monolithically integrated SiGe-Si PIN-HBT transimpedance photoreceivers are reported. SiGe-Si technology has been developed leading to SiGe-Si HBT's with f_T = 23 GHz and f_max = 34 GHz, and to PIN photodiodes with responsivity of 0.3 A/W at λ = 850 nm and bandwidth of 450 MHz. SiGe-Si HBT transimpedance amplifiers showed transimpedance gain of 52.2 dB·Ωand bandwidth of 1.6 GHz, and the photoreceivers exhibited the bandwidth of 460 MHz.

Original language	English
Pages (from-to)	415-417
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	10
Issue number	3
DOIs	https://doi.org/10.1109/68.661428
Publication status	Published - 1998 Mar
Externally published	Yes

Keywords

Monolithic integration
Photoreceivers
SiGe

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/68.661428

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title = "Monolithically integrated SiGe-Si PIN-HBT front-end photoreceivers",

abstract = "Fabrication and characterization of monolithically integrated SiGe-Si PIN-HBT transimpedance photoreceivers are reported. SiGe-Si technology has been developed leading to SiGe-Si HBT's with fT = 23 GHz and fmax = 34 GHz, and to PIN photodiodes with responsivity of 0.3 A/W at λ = 850 nm and bandwidth of 450 MHz. SiGe-Si HBT transimpedance amplifiers showed transimpedance gain of 52.2 dB·Ωand bandwidth of 1.6 GHz, and the photoreceivers exhibited the bandwidth of 460 MHz.",

keywords = "Monolithic integration, Photoreceivers, SiGe",

author = "Rieh, {J. S.} and D. Klotzkin and O. Qasaimeh and Lu, {L. H.} and K. Yang and Katehi, {L. P.B.} and P. Bhattacharya and Croke, {E. T.}",

note = "Funding Information: Manuscript received September 12, 1997; revised November 5, 1997. This work was supported by NASA-Cleveland under Grant NAG3-1903 and by the Air Force of Scientific Research under Grant F49620-95-1-0013. J.-S. Rieh, D. Klotzkin, O. Qasaimeh, L.-H. Lu, K. Yang, L. P. B. Katehi, and P. Bhattacharya are with the Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109-2122 USA. E. T. Croke is with the Hughes Research Laboratory, Malibu, CA 90265 USA. Publisher Item Identifier S 1041-1135(98)01846-1.",

year = "1998",

month = mar,

doi = "10.1109/68.661428",

language = "English",

volume = "10",

pages = "415--417",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Monolithically integrated SiGe-Si PIN-HBT front-end photoreceivers

AU - Rieh, J. S.

AU - Klotzkin, D.

AU - Qasaimeh, O.

AU - Lu, L. H.

AU - Yang, K.

AU - Katehi, L. P.B.

AU - Bhattacharya, P.

AU - Croke, E. T.

N1 - Funding Information: Manuscript received September 12, 1997; revised November 5, 1997. This work was supported by NASA-Cleveland under Grant NAG3-1903 and by the Air Force of Scientific Research under Grant F49620-95-1-0013. J.-S. Rieh, D. Klotzkin, O. Qasaimeh, L.-H. Lu, K. Yang, L. P. B. Katehi, and P. Bhattacharya are with the Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109-2122 USA. E. T. Croke is with the Hughes Research Laboratory, Malibu, CA 90265 USA. Publisher Item Identifier S 1041-1135(98)01846-1.

PY - 1998/3

Y1 - 1998/3

N2 - Fabrication and characterization of monolithically integrated SiGe-Si PIN-HBT transimpedance photoreceivers are reported. SiGe-Si technology has been developed leading to SiGe-Si HBT's with fT = 23 GHz and fmax = 34 GHz, and to PIN photodiodes with responsivity of 0.3 A/W at λ = 850 nm and bandwidth of 450 MHz. SiGe-Si HBT transimpedance amplifiers showed transimpedance gain of 52.2 dB·Ωand bandwidth of 1.6 GHz, and the photoreceivers exhibited the bandwidth of 460 MHz.

AB - Fabrication and characterization of monolithically integrated SiGe-Si PIN-HBT transimpedance photoreceivers are reported. SiGe-Si technology has been developed leading to SiGe-Si HBT's with fT = 23 GHz and fmax = 34 GHz, and to PIN photodiodes with responsivity of 0.3 A/W at λ = 850 nm and bandwidth of 450 MHz. SiGe-Si HBT transimpedance amplifiers showed transimpedance gain of 52.2 dB·Ωand bandwidth of 1.6 GHz, and the photoreceivers exhibited the bandwidth of 460 MHz.

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Monolithically integrated SiGe-Si PIN-HBT front-end photoreceivers

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Keywords

ASJC Scopus subject areas

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