Abstract
Fabrication and characterization of monolithically integrated SiGe-Si PIN-HBT transimpedance photoreceivers are reported. SiGe-Si technology has been developed leading to SiGe-Si HBT's with fT = 23 GHz and fmax = 34 GHz, and to PIN photodiodes with responsivity of 0.3 A/W at λ = 850 nm and bandwidth of 450 MHz. SiGe-Si HBT transimpedance amplifiers showed transimpedance gain of 52.2 dB·Ωand bandwidth of 1.6 GHz, and the photoreceivers exhibited the bandwidth of 460 MHz.
Original language | English |
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Pages (from-to) | 415-417 |
Number of pages | 3 |
Journal | IEEE Photonics Technology Letters |
Volume | 10 |
Issue number | 3 |
DOIs | |
Publication status | Published - 1998 Mar |
Externally published | Yes |
Bibliographical note
Funding Information:Manuscript received September 12, 1997; revised November 5, 1997. This work was supported by NASA-Cleveland under Grant NAG3-1903 and by the Air Force of Scientific Research under Grant F49620-95-1-0013. J.-S. Rieh, D. Klotzkin, O. Qasaimeh, L.-H. Lu, K. Yang, L. P. B. Katehi, and P. Bhattacharya are with the Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109-2122 USA. E. T. Croke is with the Hughes Research Laboratory, Malibu, CA 90265 USA. Publisher Item Identifier S 1041-1135(98)01846-1.
Keywords
- Monolithic integration
- Photoreceivers
- SiGe
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering