Monolithically integrated SiGe-Si PIN-HBT front-end photoreceivers

J. S. Rieh, D. Klotzkin, O. Qasaimeh, L. H. Lu, K. Yang, L. P.B. Katehi, P. Bhattacharya, E. T. Croke

Research output: Contribution to journalArticlepeer-review

22 Citations (Scopus)


Fabrication and characterization of monolithically integrated SiGe-Si PIN-HBT transimpedance photoreceivers are reported. SiGe-Si technology has been developed leading to SiGe-Si HBT's with fT = 23 GHz and fmax = 34 GHz, and to PIN photodiodes with responsivity of 0.3 A/W at λ = 850 nm and bandwidth of 450 MHz. SiGe-Si HBT transimpedance amplifiers showed transimpedance gain of 52.2 dB·Ωand bandwidth of 1.6 GHz, and the photoreceivers exhibited the bandwidth of 460 MHz.

Original languageEnglish
Pages (from-to)415-417
Number of pages3
JournalIEEE Photonics Technology Letters
Issue number3
Publication statusPublished - 1998 Mar
Externally publishedYes

Bibliographical note

Funding Information:
Manuscript received September 12, 1997; revised November 5, 1997. This work was supported by NASA-Cleveland under Grant NAG3-1903 and by the Air Force of Scientific Research under Grant F49620-95-1-0013. J.-S. Rieh, D. Klotzkin, O. Qasaimeh, L.-H. Lu, K. Yang, L. P. B. Katehi, and P. Bhattacharya are with the Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109-2122 USA. E. T. Croke is with the Hughes Research Laboratory, Malibu, CA 90265 USA. Publisher Item Identifier S 1041-1135(98)01846-1.


  • Monolithic integration
  • Photoreceivers
  • SiGe

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering


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