Monolithically integrated SiGe/Si PIN-HBT front-end transimpedance photoreceivers

J. S. Rieh; O. Qasaimeh; D. Klotzkin; L. H. Lu; K. Yang; L. P.B. Katehi; P. Bhattacharya; E. T. Croke

doi:10.1109/cornel.1997.649373

Monolithically integrated SiGe/Si PIN-HBT front-end transimpedance photoreceivers

J. S. Rieh, O. Qasaimeh, D. Klotzkin, L. H. Lu, K. Yang, L. P.B. Katehi, P. Bhattacharya, E. T. Croke

Research output: Contribution to conference › Paper › peer-review

3 Citations (Scopus)

Abstract

The demand for monolithically integrated photoreceivers based on Si-based technology keeps increasing as low cost and high reliability products are required for the expanding commercial market. Higher speed and wider operating frequency range are expected when SiGe/Si hetero-junction is introduced to the circuit design. In this paper, a monolithic SiGe/Si PIN-HBT front-end transimpedance photoreceiver is demonstrated for the first time. For this purpose, mesa-type SiGe/Si PIN-HBT technology was developed. Fabricated HBTs exhibit f_max of 34 GHz with DC gain of 25. SiGe/Si PIN photodiodes, which share base and collector layers of HBTs, demonstrate responsivity of 0.3 A/W at λ = 850 nm and bandwidth of 450 MHz. Based on these devices, single- and dual-feedback transimpedance amplifiers were fabricated and they exhibited the bandwidth of 3.2 GHz and 3.3 GHz with the transimpedance gain of 45.2 dBΩ and 47.4 dBΩ, respectively. Monolithically integrated single-feedback PIN-HBT photo-receivers were implemented and the bandwidth was measured to be approximately 0.5 GHz, which is limited by the bandwidth of PIN photodiodes.

Original language	English
Pages	322-331
Number of pages	10
DOIs	https://doi.org/10.1109/cornel.1997.649373
Publication status	Published - 1997
Externally published	Yes
Event	Proceedings of the 1997 IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits - Ithaca, NY, USA Duration: 1997 Aug 4 → 1997 Aug 6

Other

Other	Proceedings of the 1997 IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits
City	Ithaca, NY, USA
Period	97/8/4 → 97/8/6

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1109/cornel.1997.649373

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Rieh, J. S., Qasaimeh, O., Klotzkin, D., Lu, L. H., Yang, K., Katehi, L. P. B., Bhattacharya, P., & Croke, E. T. (1997). Monolithically integrated SiGe/Si PIN-HBT front-end transimpedance photoreceivers. 322-331. Paper presented at Proceedings of the 1997 IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Ithaca, NY, USA. https://doi.org/10.1109/cornel.1997.649373

Rieh, JS, Qasaimeh, O, Klotzkin, D, Lu, LH, Yang, K, Katehi, LPB, Bhattacharya, P & Croke, ET 1997, 'Monolithically integrated SiGe/Si PIN-HBT front-end transimpedance photoreceivers', Paper presented at Proceedings of the 1997 IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Ithaca, NY, USA, 97/8/4 - 97/8/6 pp. 322-331. https://doi.org/10.1109/cornel.1997.649373

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title = "Monolithically integrated SiGe/Si PIN-HBT front-end transimpedance photoreceivers",

abstract = "The demand for monolithically integrated photoreceivers based on Si-based technology keeps increasing as low cost and high reliability products are required for the expanding commercial market. Higher speed and wider operating frequency range are expected when SiGe/Si hetero-junction is introduced to the circuit design. In this paper, a monolithic SiGe/Si PIN-HBT front-end transimpedance photoreceiver is demonstrated for the first time. For this purpose, mesa-type SiGe/Si PIN-HBT technology was developed. Fabricated HBTs exhibit fmax of 34 GHz with DC gain of 25. SiGe/Si PIN photodiodes, which share base and collector layers of HBTs, demonstrate responsivity of 0.3 A/W at λ = 850 nm and bandwidth of 450 MHz. Based on these devices, single- and dual-feedback transimpedance amplifiers were fabricated and they exhibited the bandwidth of 3.2 GHz and 3.3 GHz with the transimpedance gain of 45.2 dBΩ and 47.4 dBΩ, respectively. Monolithically integrated single-feedback PIN-HBT photo-receivers were implemented and the bandwidth was measured to be approximately 0.5 GHz, which is limited by the bandwidth of PIN photodiodes.",

author = "Rieh, {J. S.} and O. Qasaimeh and D. Klotzkin and Lu, {L. H.} and K. Yang and Katehi, {L. P.B.} and P. Bhattacharya and Croke, {E. T.}",

year = "1997",

doi = "10.1109/cornel.1997.649373",

language = "English",

pages = "322--331",

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AU - Rieh, J. S.

AU - Qasaimeh, O.

AU - Klotzkin, D.

AU - Lu, L. H.

AU - Yang, K.

AU - Katehi, L. P.B.

AU - Bhattacharya, P.

AU - Croke, E. T.

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AB - The demand for monolithically integrated photoreceivers based on Si-based technology keeps increasing as low cost and high reliability products are required for the expanding commercial market. Higher speed and wider operating frequency range are expected when SiGe/Si hetero-junction is introduced to the circuit design. In this paper, a monolithic SiGe/Si PIN-HBT front-end transimpedance photoreceiver is demonstrated for the first time. For this purpose, mesa-type SiGe/Si PIN-HBT technology was developed. Fabricated HBTs exhibit fmax of 34 GHz with DC gain of 25. SiGe/Si PIN photodiodes, which share base and collector layers of HBTs, demonstrate responsivity of 0.3 A/W at λ = 850 nm and bandwidth of 450 MHz. Based on these devices, single- and dual-feedback transimpedance amplifiers were fabricated and they exhibited the bandwidth of 3.2 GHz and 3.3 GHz with the transimpedance gain of 45.2 dBΩ and 47.4 dBΩ, respectively. Monolithically integrated single-feedback PIN-HBT photo-receivers were implemented and the bandwidth was measured to be approximately 0.5 GHz, which is limited by the bandwidth of PIN photodiodes.

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Monolithically integrated SiGe/Si PIN-HBT front-end transimpedance photoreceivers

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