Morphological stability of Ag reflector for high-power GaN-based vertical light-emitting diode by addition of Ni layer

Young Yun Choi; Tae Yeon Seong

doi:10.1016/j.spmi.2014.06.007

Morphological stability of Ag reflector for high-power GaN-based vertical light-emitting diode by addition of Ni layer

Young Yun Choi, Tae Yeon Seong^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

We investigated the reasons why Ag reflectors in vertical light-emitting diodes showed much better morphological stability with the addition of an intermediate Ni layer by means of X-ray pole figures, scanning electron microscopy (SEM), and SEM electron backscatter diffraction (EBSD) techniques. The SEM results showed that, unlike the pitted Ag-only contacts, the Ni-combined Ag contacts annealed at 300 °C contained only hillocks, even after annealing for 60 min. The EBSD results demonstrated that the Ag-only samples were more strongly 〈1 1 1〉-textured than the Ni-combined Ag samples after annealing for 60 min. The pole-figure results also indicated that, for both the samples, the {1 1 1} texture was enhanced by annealing, although the Ag-only samples were more highly 〈1 1 1〉-textured than the Ni-combined Ag samples. On the basis of the SEM, EBSD, and pole-figure results, we interpret and discuss the possible mechanisms underlying the improved morphological stability of the Ni-combined Ag reflectors.

Original language	English
Pages (from-to)	342-349
Number of pages	8
Journal	Superlattices and Microstructures
Volume	73
DOIs	https://doi.org/10.1016/j.spmi.2014.06.007
Publication status	Published - 2014 Sept

Bibliographical note

Funding Information:
This work was supported by the industrial technology development program funded by the Ministry of Knowledge Economy (MKE), Korea and the industrial strategic technology development program , 10041878 , development of WPE 75% LED device process and standard evaluation technology funded by the Ministry of Knowledge Economy , Korea.

Copyright:
Copyright 2014 Elsevier B.V., All rights reserved.

Keywords

Ag reflector
Electron backscatter diffraction
LED
X-ray pole figure

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/j.spmi.2014.06.007

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@article{1cb6b30ef24e43a89a078416d641a635,

title = "Morphological stability of Ag reflector for high-power GaN-based vertical light-emitting diode by addition of Ni layer",

abstract = "We investigated the reasons why Ag reflectors in vertical light-emitting diodes showed much better morphological stability with the addition of an intermediate Ni layer by means of X-ray pole figures, scanning electron microscopy (SEM), and SEM electron backscatter diffraction (EBSD) techniques. The SEM results showed that, unlike the pitted Ag-only contacts, the Ni-combined Ag contacts annealed at 300 °C contained only hillocks, even after annealing for 60 min. The EBSD results demonstrated that the Ag-only samples were more strongly 〈1 1 1〉-textured than the Ni-combined Ag samples after annealing for 60 min. The pole-figure results also indicated that, for both the samples, the \{1 1 1\} texture was enhanced by annealing, although the Ag-only samples were more highly 〈1 1 1〉-textured than the Ni-combined Ag samples. On the basis of the SEM, EBSD, and pole-figure results, we interpret and discuss the possible mechanisms underlying the improved morphological stability of the Ni-combined Ag reflectors.",

keywords = "Ag reflector, Electron backscatter diffraction, LED, X-ray pole figure",

author = "Choi, \{Young Yun\} and Seong, \{Tae Yeon\}",

note = "Funding Information: This work was supported by the industrial technology development program funded by the Ministry of Knowledge Economy (MKE), Korea and the industrial strategic technology development program , 10041878 , development of WPE 75\% LED device process and standard evaluation technology funded by the Ministry of Knowledge Economy , Korea. Copyright: Copyright 2014 Elsevier B.V., All rights reserved.",

year = "2014",

month = sep,

doi = "10.1016/j.spmi.2014.06.007",

language = "English",

volume = "73",

pages = "342--349",

journal = "Superlattices and Microstructures",

issn = "0749-6036",

publisher = "Academic Press Inc.",

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T1 - Morphological stability of Ag reflector for high-power GaN-based vertical light-emitting diode by addition of Ni layer

AU - Choi, Young Yun

AU - Seong, Tae Yeon

N1 - Funding Information: This work was supported by the industrial technology development program funded by the Ministry of Knowledge Economy (MKE), Korea and the industrial strategic technology development program , 10041878 , development of WPE 75% LED device process and standard evaluation technology funded by the Ministry of Knowledge Economy , Korea. Copyright: Copyright 2014 Elsevier B.V., All rights reserved.

PY - 2014/9

Y1 - 2014/9

N2 - We investigated the reasons why Ag reflectors in vertical light-emitting diodes showed much better morphological stability with the addition of an intermediate Ni layer by means of X-ray pole figures, scanning electron microscopy (SEM), and SEM electron backscatter diffraction (EBSD) techniques. The SEM results showed that, unlike the pitted Ag-only contacts, the Ni-combined Ag contacts annealed at 300 °C contained only hillocks, even after annealing for 60 min. The EBSD results demonstrated that the Ag-only samples were more strongly 〈1 1 1〉-textured than the Ni-combined Ag samples after annealing for 60 min. The pole-figure results also indicated that, for both the samples, the {1 1 1} texture was enhanced by annealing, although the Ag-only samples were more highly 〈1 1 1〉-textured than the Ni-combined Ag samples. On the basis of the SEM, EBSD, and pole-figure results, we interpret and discuss the possible mechanisms underlying the improved morphological stability of the Ni-combined Ag reflectors.

AB - We investigated the reasons why Ag reflectors in vertical light-emitting diodes showed much better morphological stability with the addition of an intermediate Ni layer by means of X-ray pole figures, scanning electron microscopy (SEM), and SEM electron backscatter diffraction (EBSD) techniques. The SEM results showed that, unlike the pitted Ag-only contacts, the Ni-combined Ag contacts annealed at 300 °C contained only hillocks, even after annealing for 60 min. The EBSD results demonstrated that the Ag-only samples were more strongly 〈1 1 1〉-textured than the Ni-combined Ag samples after annealing for 60 min. The pole-figure results also indicated that, for both the samples, the {1 1 1} texture was enhanced by annealing, although the Ag-only samples were more highly 〈1 1 1〉-textured than the Ni-combined Ag samples. On the basis of the SEM, EBSD, and pole-figure results, we interpret and discuss the possible mechanisms underlying the improved morphological stability of the Ni-combined Ag reflectors.

KW - Ag reflector

KW - Electron backscatter diffraction

KW - LED

KW - X-ray pole figure

UR - https://www.scopus.com/pages/publications/84903943675

U2 - 10.1016/j.spmi.2014.06.007

DO - 10.1016/j.spmi.2014.06.007

M3 - Article

AN - SCOPUS:84903943675

SN - 0749-6036

VL - 73

SP - 342

EP - 349

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

ER -

Morphological stability of Ag reflector for high-power GaN-based vertical light-emitting diode by addition of Ni layer

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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